Generation of DQPSK format and its performance against polarization mode dispersion

We propose a novel transmitter and receiver for differential quadrature phase-shift keying （DQPSK） format. The impact of the first-order polarization mode dispersion （PMD） on systems using DQPSK with 100- Gb/s non-return-to-zero （NRZ） or return-to-zero （RZ） format is investigated. Through computing the eye openings of DQPSK formats under different PMD conditions, it is found that NRZ DQPSK, as compared with RZ DQPSK, incurs smaller eye opening due to PMD. Carrier-suppressed return-to-zero （CSRZ） DQPSK format has better tolerance than RZ DQPSK format to PMD for a given bit rate.     

Using PVP/SDS Complex as a Probe to Study the Inclusion Complex of β-cyclodextrin with SDS in Aqueous Solution

利用PVP/SDS聚集体作为探针研究了水溶液中β-环糊精与SDS之间的包合作用,结果表明在含有PVP/SDS聚集体溶液的相对粘度对β-环糊精浓度作图中存在着特征浓度c_s,当β-环糊精的浓度低于c_s时,随着β-环糊精浓度的增加,溶液的相对粘度迅速下降;与此相反,当β-环糊精浓度高于c_s时,随着β-环糊精浓度的增加,溶液的相对粘度逐渐增加. 含有PVP/SDS聚集体溶液相对粘度随着β-环糊精浓度增加而迅速下降是由于β-环糊精包合了客体分子SDS,该包合作用将导致SDS分子从高分子链中脱落. β-环糊精和SDS包合比例可以由c_s计算得出,实验结果是1比1. 进一步的实验结果表明,c_s与PVP/SDS聚集体中SDS的含量有关、和PVP的含量无关,但是β-环糊精和SDS的包合比与PVP/SDS聚集体中SDS和PVP的含量皆无关.     

Photoluminescence properties of thenardite activated with Eu

Na₂SO₄:Eu phosphors were prepared by heating pure natural thenardite with EuF₃ at 900 °C for 20 min in air. The photoluminescence (PL) and excitation spectra of as-prepared and γ-ray-irradiated phosphors were observed at 300 K. The PL spectrum under 394 nm excitation consisted of strong narrow bands with peaks at 579, 592, 616, 652, 697 and 741 nm, assigned to the ⁵D₀→⁷F_J (J=0, 1, 2, …, 5) transitions, respectively, within Eu³⁺. The PL spectrum under 340 nm excitation consisted of a broad Eu²⁺ band with a peak at 435 nm. The excitation spectrum obtained by monitoring the violet luminescence consisted of a weak band with a peak at approximately 261 nm and a broad Eu²⁺ band with a peak at approximately 338 nm. The relative efficiency of the violet luminescence of the γ-ray-irradiated phosphor at the exposure of 46 kGy increased up to 3.0 times that of the unirradiated phosphor. The enhancement of violet luminescence by γ-ray irradiation was ascribed to the conversion of Eu³⁺ to Eu²⁺ in Na₂SO₄.     

Influence of the illumination on the subband structure and?occupation in AlxGa1?xN/GaN heterostructures

The subband structure and occupation in the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov–de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.     

New search for processes violating the Pauli exclusion principle in sodium and in iodine

In this paper a new search for non-Paulian nuclear processes, i.e. processes normally forbidden by the Pauli Exclusion Principle (PEP), is presented. It has been carried out at the Gran Sasso National Laboratory of the INFN by means of the highly radiopure DAMA/LIBRA set-up (sensitive mass of about 250 kg highly radiopure NaI(Tl)). In particular, a new improved upper limit for the spontaneous non-Paulian emission rate of protons with energy E _p ≥ 10 MeV in ²³Na and ¹²⁷I has been obtained: 1.63 × 10⁻³³ s⁻¹ (90% C.L.). The corresponding limit on the relative strength (δ ²) for the searched non-Paulian transition is δ ²≲(3–4)×10⁻⁵⁵ (90% C.L.). Moreover, PEP-violating electron transitions in iodine atoms have also been investigated. Lifetimes shorter than 4.7×10³⁰ s are excluded at 90% C.L.; this allows us to derive the limit δ _e ²<1.28×10⁻⁴⁷ (90% C.L.). This latter limit can also be related to a possible finite size of the electron in composite models of quarks and leptons providing superficial violation of the PEP; the obtained upper limit on the electron size is r ₀<5.7×10⁻¹⁸ cm (energy scale of E≳3.5 TeV).     

纤锌矿结构AlInN电子及光学性质的第一性原理研究

本文通过基于密度泛函理论的第一性原理,研究了纤锌矿结构Al1-xInxN在不同In浓度下的稳固结构,以及电子和光学性质的变化规律。研究表明,AlInN不同In浓度的晶格结构都很稳定,说明AlInN的兼容性很好。晶格常数随In浓度的增大不断增大,而混晶的带隙则不断减小。并且随In浓度的增大,混晶在紫外光区的吸收系数、反射系数及折射率增大,吸收边、吸收峰和反射峰蓝移,且这两个峰的峰值减小。AlInN的吸收、反射和折射率曲线在Eg处出现峰值行为,此Eg处的峰值大小随In浓度的增加而增大。当In浓度达到87.5%时,混晶AlInN在紫外光区的吸收、反射和折射能力均达到最强,表明此时的掺杂效果最好。     

Characteristics of xenon-lamp pumped pyrromethene 567-doped dye laser based on polymethylmethacrylater

The solid-state medium containing pyrromethene 567 (PM567) in a polymethylmethacrylate polymer host is shown to lase under the flash lamp excitation. The experimental setup is an ordinary industrial product without special design. The bulk transmission losses, the output energy, and the other lasing properties are compared. The medium with the lowest transmission loss, measured to be 0.392 %/cm at 633 nm, gives a laser output of 130 mJ with a slope efficiency of 0.082%.     

准相位型光子筛设计

提出了一种准相位型光子筛。该准相位型光子筛通过改变暗环上小孔直径与带宽的比值,对焦点处的相位分布进行调制,使通过亮环和暗环上小孔的光波在焦点处发生相长干涉,生成聚焦光斑。该准相位型光子筛无需对基底进行特殊处理,即可完成相位型光子筛的制作,降低了加工难度。和普通振幅型光子筛相比,在相同最小加工尺寸的条件下,准相位型光子筛具有较大的数值孔径,可降低聚焦光斑尺寸。并且,和多区光子筛相比,在同样的最小加工尺寸及数值孔径的条件下,准相位型光子筛光斑尺寸及质量均优于对方。为大数值孔径光子筛设计提供了一种新的设计方法。     

正交光楔激光远场焦斑测量方法

为验证正交光楔激光远场焦斑测量方法在提取光斑高频组分、扩展CCD测量动态范围和减小光束质量测量误差等诸方面的有效性,以常用的光束质量因子作为衡量新方法有效性的指标,建立离焦光斑强度分布理论模型并搭建相应的实验平台进行实验验证。验证结果表明:新方法与传统远场测量方案相比,使实验所用CCD的测量动态范围拓展了约9倍,实际光斑远离中心主核区域的大量高频旁瓣分布特征从CCD背景噪声起伏中凸显出来,光束质量因子的测量平均相对误差也有约16%的精度改善。     

外场下压力及屏蔽对无限深量子阱中施主结合能的影响

考虑外加磁场、压力及屏蔽效应,利用变分方法数值计算GaN/AlxGa1-xN无限深量子阱系统中的杂质态结合能。给出结合能随磁场和阱宽的变化关系,同时讨论了有无屏蔽时的区别。结果表明:在磁场和压力作用下,结合能随阱宽的增大而减小;阱宽和压力一定时,结合能随磁场的增大而增大。屏蔽效应使得有效库仑吸引作用减弱而导致杂质态结合能显著下降。屏蔽效应对结合能的影响随压力增大而增强,随磁场强度增大而减弱。