Tunable multi-function broadband splitter with optical bistability based on surface plasmon

A tunable multi-function broadband splitter consisted of a silver film, Kerr medium and a silver grating sandwiched between linear dielectrics waveguides is proposed and numerically investigated. This splitter can realize the functions of the beam splitter, the polarization splitter and wavelength beam splitter. This surface plasmon based device provides a unique approach for polarization sensitive manipulation of light in an integrated circuit and will be essential for future classical and quantum information processes.     

A polyene chain of canthaxanthin investigated by temperature-dependent resonance Raman spectra and density functional theory （DFT） calculations

We report on a temperature-dependent resonance Raman spectral characterization of the polyene chain of canthax- anthin. It is observed that all vibrational intensities of the polyene chain are inversely proportional to temperature, which is analyzed by the resonance Raman effect and the coherent weakly damped electron/lattice vibrations. The increase in intensity of the CC overtone/combination relative to the fundamental with temperature decreasing is detected and discussed in terms of electron/phonon coupling and the activation energy Uop. Moreover, the polyene chain studies using the density functional theory B3LYP/6-31 G＊ level reveal a prominent peak at 1525 cm-1 consisting of two closely spaced modes that are both dominated by C=C stretching coordinates of the polyene chain.     

Thermal modeling optimization and experimental validation for a single, concentrator solar cell system with a heat sink

A single concentrator solar cell model with a heat sink is established to simulate the thermal performance of the system by varying the number, height, and thickness of fins, the base thickness and thermal resistance of the thermal conductive adhesive. Influence disciplines of those parameters on temperatures of the solar cell and heat sink are obtained. With optimized number, height and thickness of fins, and the thickness values of base of 8, 1.4 cm, 1.5 mm, and 2 mm, the lowest temperatures of the solar cell and heat sink are 41.7℃ and 36.3℃ respectively. A concentrator solar cell prototype with a heat sink fabricated based on the simulation optimized structure is built. Outdoor temperatures of the prototype are tested. Temperatures of the solar cell and heat sink are stabilized with time continuing at about 37℃-38℃ and 35℃-36℃ respectively, slightly lower than the simulation results because of effects of the wind and cloud. Thus the simulation model enables to predict the thermal performance of the system, and the simulation results can be a reference for designing heat sinks in the field of single concentrator solar cells.     

一种直接用示波器观测单变量非线性系统状态的新方法

为解决用示波器观测单变量非线性系统难的问题, 本文提出了一种45°线法, 该方法能将随时间变化的连续信号以特殊的方式转换成直角坐标上45°线上的点图, 并可用通用双踪示波器 (模拟或数字均可)直接显示出来, 从而达到直接方便地观测和分析单变量被测系统运行时的各种状态, 如周期稳定态, 局部和全局不稳定态. 文中详细阐述了该方法的机理. 同时, 研究和解决了设计实现该方法物理电路的关键问题, 即从连续变化的信号中提取出能反映系统状态的有用信号. 由于蔡氏电路是典型的非线性系统, 且能随参数的变化产生各种丰富的状态, 本文选用该电路作为被测系统进行了大量的物理实验, 实验结果证实了该方法的有效性和实用性. 关键词： 45°线法 单变量系统 系统状态 双踪示波器     

Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback (DFB) lasers using varied ridge width with a 4×1-multimode-interference (MMI) optical combiner and a semiconductor optical amplifier (SOA) is demonstrated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio (SMSR) exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously.     

Oscillation of coercivity between positive and negative in MnxGe1-x：H ferromagnetic semiconductor films

Amorphous MnxGe1-x :H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron cosputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x :H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6 :H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.     

Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications.     

交叉分子束方法研究H+CH4和H+CD4反应:CH3/CD3的振动激发态产物通道

We study the H+CH₄/CD₄→H₂/HD+CH₃/CD₃ reactions using the time sliced velocity map ion imaging technique. Ion images of the CH₃/CD₃ products were measured by the (2+1) resonance enhanced multi-photon ionization (REMPI) detection method. Besides the CH₃/CD₃ products in the ground state, ion images of the vibrationally excited CH₃/CD₃ products were also observed at two collision energies of 0.72 and 1.06 eV. It is shown that the angular distribution of the products CH₃/CD₃ in vibrationally excited states gradually vary from backward scattering to sideways scattering as the collision energy increases. Compared to the CH₃/CD₃ products in the ground state, the CH₃/CD₃ products in vibrationally excited states tend to be more sideways scattered, indicating that larger impact parameters play a more important role in the vibrationally excited product channels.     

新型波长解调技术在干涉型光纤传感器输出解调中的应用

提出了一种改进型边缘滤波波长解调技术,解决干涉型或谐振型光纤传感器输出的干涉谱波长的快速解调问题。该波长解调技术基于啁啾光栅和长周期光栅的光谱特点,以啁啾光栅作为矩形滤波器,提取传感器输出干涉谱的一个干涉峰;以长周期作为边缘滤波器,将干涉峰的波长信息转化为光强信息进行检测。该波长解调技术波长解调范围为传感器输出干涉谱的一个自由光谱范围(FSR),解调速度快,克服了当前波长解调技术中存在的测量范围与测量速度难以同时提高的问题,同时还具有系统成本低 ,体积小,能够灵活多路扩展的特点。详细介绍了解调系统的工作原理以及系统结构,并将其实际应用于一种干涉型光纤电流传感器输出干涉谱的波长解调中。通过实验证明电流传感器工作在工频及脉冲电流(脉冲宽度25 μs)情况下,该解调系统对传感器输出干涉谱具有准确、快速的解调效果。该研究对推进干涉或谐振型光纤传感器的实际工程化水平的提高具有重要意义。     

Spectral properties and energy transfer of Yb,Er:GdVO4 crystal

GdVO₄ single crystal co-doped with Yb³⁺ and Er³⁺ was grown by the Czochralski method. The X-ray powder diffraction pattern of Yb,Er:GdVO₄ crystal confirms that the as-grown crystal is isostructural with pure GdVO₄ crystal. Its polarized absorption spectra and non-polarized fluorescence spectra were measured at room temperature. The absorption band at 984 nm for π-polarization has an FWHM of about 36 nm, which is favorable for InGaAs LD laser pumping. The spectrum properties of Er³⁺ in Yb,Er:GdVO₄ crystal were investigated based on Judd–Ofelt theory. There is strong energy transfer from Yb³⁺ to Er³⁺ in this crystal. When excited with 980 nm radiation, this crystal emitted strong fluorescence at about 1529 nm and 552.5 nm. The total energy transfer rate and efficiency from Yb³⁺ to Er³⁺ is 3.33 ms^-1 and 67%, respectively. The energy transfer between Er³⁺ and Yb³⁺ ions is a multistep transfer process, and was investigated based on a random-walk model. The investigation result shows that there is strong cooperative-sensitization effect from Yb³⁺ to Er³⁺, which is the main upconversion energy-transfer process in this crystal. PACS 42.70.Hj; 81.10.Fq; 42.55.Rz