改进型异质栅对深亚微米栅长碳化硅MESFET特性影响

基于器件物理分析方法,结合高场迁移率、肖特基栅势垒降低、势垒隧穿等物理模型, 分析了改进型异质栅结构对深亚微米栅长碳化硅肖特基栅场效应晶体管沟道电势、 夹断电压以及栅下电场分布的影响.通过与传统栅结构器件特性的对比表明, 异质栅结构在碳化硅肖特基栅场效应晶体管的沟道电势中引入了多阶梯分布,加强了近源端电场; 另一方面,相比于双栅器件,改进型异质栅器件沟道最大电势的位置远离源端, 因此载流子在沟道中加速更快,在一定程度上屏蔽了漏压引起的电势变化,更好抑制了短沟道效应. 此外,研究了不同结构参数的异质栅对短沟道器件特性的影响,获得了优化的设计方案, 减小了器件的亚阈值倾斜因子.为发挥碳化硅器件在大功率应用中的优势,设计了非对称异质栅结构, 改善了栅电极边缘的电场分布,提高了小栅长器件的耐压.     

Gas phase retro-Michael reaction resulting from dissociative protonation: fragmentation of protonated warfarin in mass spectrometry

A mass spectrometric study of protonated warfarin and its derivatives (compounds 1 to 5) has been performed. Losses of a substituted benzylideneacetone and a 4-hydroxycoumarin have been observed as a result of retro-Michael reaction. The added proton is initially localized between the two carbonyl oxygens through hydrogen bonding in the most thermodynamically favorable tautomer. Upon collisional activation, the added proton migrates to the C-3 of 4-hydroxycoumarin, which is called the dissociative protonation site, leading to the formation of the intermediate ion-neutral complex (INC). Within the INC, further proton transfer gives rise to a proton-bound complex. The cleavage of one hydrogen bond of the proton-bound complex produces the protonated 4-hydroxycoumarin, while the separation of the other hydrogen bond gives rise to the protonated benzylideneacetone. Theoretical calculations indicate that the 1, 5-proton transfer pathway is most thermodynamically favorable and support the existence of the INC. Both substituent effect and the kinetic method were utilized for explaining the relative abundances of protonated 4-hydroxycoumarin and protonated benzylideneacetone derivative. For monosubstituted warfarins, the electron-donating substituents favor the generation of protonated substituted benzylideneacetone, whereas the electron-withdrawing groups favor the formation of protonated 4-hydroxycoumarin. Copyright ? 2012 John Wiley & Sons, Ltd.     

Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor

Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- and two- dimensional Poisson’s equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering (DIBL) effect. The calculated results reveal that the dual material gate (DMG) structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor (SMGFET).     

Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal-semiconductor field-effect transistors

An improved structure of silicon carbide metal-semiconductor field-effect transistors (MESFET) is proposed for high power microwave applications. Numerical models for the physical and electrical mechanisms of the device are presented, and the static and dynamic electrical performances are analysed. By comparison with the conventional structure, the proposed structure exhibits a superior frequency response while possessing better DC characteristics. A p-type spacer layer, inserted between the oxide and the channel, is shown to suppress the surface trap effect and improve the distribution of the electric field at the gate edge. Meanwhile, a lightly doped n-type buffer layer under the gate reduces depletion in the channel, resulting in an increase in the output current and a reduction in the gate-capacitance. The structural parameter dependences of the device performance are discussed, and an optimized design is obtained. The results show that the maximum saturation current density of 325 mA/mm is yielded, compared with 182 mA/mm for conventional MESFETs under the condition that the breakdown voltage of the proposed MESFET is larger than that of the conventional MESFET, leading to an increase of 79% in the output power density. In addition, improvements of 27% cut-off frequency and 28% maximum oscillation frequency are achieved compared with a conventional MESFET, respectively.     

A level-set method for convective–diffusive particle deposition

This article presents a fixed-mesh approach to model convective–diffusive particle deposition onto surfaces. The deposition occurring at the depositing front is modeled as a first order reaction. The evolving depositing front is captured implicitly using the level-set method. Within the level-set formulation, the particle consumed during the deposition process is accounted for via a volumetric sink term in the species conservation equation for the particles. Fluid flow is modeled using the incompressible Navier–Stokes equations. The presented approach is implemented within the framework of a finite volume method. Validations are made against solutions of the total concentration approach for one- and two-dimensional depositions with and without convective effect. The presented approach is then employed to investigate deposition on single- and multi-tube arrays in a cross-flow configuration.     

Algebraic connectivity of directed graphs

We consider a generalization of Fiedler's notion of algebraic connectivity to directed graphs. We show that several properties of Fiedler's definition remain valid for directed graphs and present properties peculiar to directed graphs. We prove inequalities relating the algebraic connectivity to quantities such as the bisection width, maximum directed cut and the isoperimetric number. Finally, we illustrate an application to the synchronization in networks of coupled chaotic systems.     

Antibacterial evaluation of some Schiff bases derived from 2-acetylpyridine and their metal complexes

A series of Schiff bases derived from 2-acetylpyridne and their metal complexes were characterized by elemental analysis, NMR, FT-IR and UV-Vis spectral studies. The complexes were screened for anti-bacterial activity against Methicillin-resistant Staphylococcus aureus (MRSA), Acinetobacter baumanni (AC), Klebsiella pneumonie (KB) and Pseudomonas aeruginosa (PA) using the disc diffusion and micro broth dilution assays. Based on the overall results, the complexes showed the highest activities against MRSA while a weak antibacterial activity was observed against A. baumanii and P. aeruginosa.     

Cluster synchronization in fractional-order complex dynamical networks

Cluster synchronization of complex dynamical networks with fractional-order dynamical nodes is discussed in the Letter. By using the stability theory of fractional-order differential system and linear pinning control, a sufficient condition for the stability of the synchronization behavior in complex networks with fractional order dynamics is derived. Only the nodes in one community which have direct connections to the nodes in other communities are needed to be controlled, resulting in reduced control cost. A numerical example is presented to demonstrate the validity and feasibility of the obtained result. Numerical simulations illustrate that cluster synchronization performance for fractional-order complex dynamical networks is influenced by inner-coupling matrix, control gain, coupling strength and topological structures of the networks.     

Adaptive pinning synchronization in fractional-order complex dynamical networks

Synchronization of general complex dynamical networks with fractional-order dynamical nodes is addressed in this paper. Based on the stability theory of fractional-order differential systems and adaptive pinning control, some sufficient local asymptotical synchronization criteria and global asymptotical ones are derived respectively, which succeed in solving the problem about how many nodes are need to be controlled and how much coupling strength should be applied to ensure the synchronization of the entire fractional-order networks. The obtained results are more general and effective than those reported. Moreover, the coupling-configuration matrices and the inner-coupling matrices are not assumed to be symmetric and irreducible. Finally, a numerical simulation is presented to demonstrate the validity and feasibility of the proposed synchronization criteria.