The effect of the boundary conditions on in-plane and out-of-plane stress field in three dimensional plates weakened by free-clamped V-notches

Dealing with the material microstructure an analytical multiscale model has recently been developed by Sih. Physically, the different orders of the stress singularities are related to the different constraints associated with the defect thought as a microscopic V-notch at the tip of the main crack. Irregularities of the material microstructure tend to curl the crack tip being the clamped-free boundary conditions the more realistic and general representation of what occurs on the microscopic V-notch. As a result, mixed mode conditions are always present along the V-notch bisector line.It is known for a long time that at the antisymmetric (mode II) stress distribution ahead of the crack tip generates a coupled out-of-plane singular mode. Recent theoretical and numerical analyses have demonstrated that this out-of-plane mode due to three-dimensional effects occurs also in the case of large V-notches where the mode II stress field is no longer singular. In addition, when the notch opening angle is non-zero, the three-dimensional singular stress state is strongly influenced by the plate thickness.The aim of this paper is to investigate the effect of free-fixed boundary conditions along the notch edges in three dimensional plates weakened by pointed V-notches and quantify the intensity of the out-of-plane singularity occurring under this constraint configuration. For the sake of simplicity a macronotch is considered rather than a micronotch. A synthesis of the magnitude of the stress state through the plate thickness is carried out by using the mean value of the strain energy density over a given control volume embracing the notch tip. The capability of the strain energy density to capture all the combined effects due to the out-of-plane mode make it a powerful parameter at every scale levels.     

The surface phase transition and low-temperature phase of α-Ga(0 1 0) studied by SPA-LEED

The order–disorder phase transition on the α-Ga(0 1 0) structure was studied by spot-profile analysis low energy electron diffraction (SPA-LEED). A low temperature diffraction pattern reveals a small splitting of the overlayer spots which corresponds to a real-space distance of 81 Å, equivalent to 18 unit cells. The splitting is interpreted as caused by a regular ordering of anti-phase domains of the low-temperature phase. Due to the low symmetry of the surface, the domain boundaries are aligned only in one direction, giving rise to a regular, one-dimensional grid. The temperature dependence of the intensity and width of the reconstruction-induced diffraction spots is also investigated. It suggests that the phase transition takes place at a critical temperature T_c=232 K and that anti-phase boundary proliferation plays a role.     

A dipole band in 124Xe

High-spin states in ¹²⁴Xe were populated by means of the ¹¹⁰Pd(¹⁸O,4n) reaction. In-beam γ rays were measured using the GASP spectrometer. A dipole band, similar to those previously found in other nuclei of this mass region, was identified in ¹²⁴Xe.     

Observation of a sharp lambda peak in the third harmonic voltage response of high-T superconductor thin films

In this paper, we report on the sharp peak observed in the third harmonic voltage response generated by a bias sinusoidal current applied to several strips patterned in a YBa₂Cu₃O _{7 - δ} thin film and in two La_2-xSr_xCuO₄ thin films, when the temperature is close to the normal-superconductor transition. The lambda-shaped temperature dependence of the third harmonic signal on the current characteristics is studied. Several physical mechanisms of third harmonic generation are examined. Received 13 November 2002 / Received in final form 21 February 2003 Published online 7 May 2003     

Structure of neutron-rich Be and C isotopes

The structure of neutron-rich beryllium isotopes has been investigated using different heavy-ion-induced transfer reactions. In neutron transfer reactions, the population of final states shows a strong sensitivity to the chosen core nucleus, i.e., the target nuclei ⁹Be or ¹⁰Be, respectively. Molecular rotational bands up to high excitation energies are observed with ⁹Be as the core due to its pronounced 2α-cluster structure, whereas only a few states at low excitation energies are populated with ¹⁰Be as the core. For ¹¹Be, a detailed investigation has been performed for the three states at 3.41, 3.89, and 3.96 MeV, which resulted in the most probable spin-parity assignments 3/2⁺, 5/2^?, and 3/2^?, respectively. Furthermore, we have studied particle-hole states of ¹⁶C using the ¹³C(¹²C, ⁹C)¹⁶C reaction and found 14 previously unknown states. Using the ¹²C(¹²C, ⁹C)¹⁵C reaction, five new states were observed for ¹⁵C.     

Subwavelength-resolution near-field Raman spectroscopy

The resolution capabilities of near-field Raman spectroscopy based on a giant enhancement of the electric field near a nanosized metal probe are studied. As a test sample, bundles of single-walled carbon nanotubes deposited on glass substrates are used. It is shown that this method ensures a subwavelength spatial resolution of about 50 nm and demonstrates a Raman scattering enhancement of the order of 10⁴.     

Study of the energy release region of a heavy-ion flux in nanomaterials by X-ray spectroscopy of multicharged ions

X-ray spectroscopic data are reported on the state of a silicon aerogel medium (SiO₂) irradiated by a Ni ion flux with an energy of 4.7 MeV/nucleon. Radiation from the electron transitions to the K shell in multicharged Si ions is detected with spatial resolution along the direction of the beam propagation in the medium. Calculations performed for the ionization state and population of the levels excited in the silicon atoms of the target provide the estimate T_e = 70–120 eV for the medium electron temperature in the ion tack region. Two-dimensional hydrodynamic calculations provide the estimate T_e = 60–116 eV for the same conditions and densities of 0.5–2.5 g/cm³ of the excited target medium.