Shear rheology of lyotropic liquid crystals: a case study

We have investigated the rheological properties of lyotropic liquid crystals (LCs) formed by self-assembled neutral lipids and water, their relationship with the topology of the structure, and their dependence on temperature and water content. The phase diagram of a representative monoglyceride-water system, determined by combining cross-polarized optical microscopy and small-angle X-ray scattering (SAXS), included four structures: lamellar, hexagonal, gyroid bicontinuous cubic (Ia3d), and double diamond bicontinuous cubic (Pn3m), as well as several regions of two-phase coexistence of some of the above structures. Rheology in the linear viscoelastic regime revealed a specific signature that was characteristic of the topology of each structure considered. The order-order transitions lamellar-to-cubic and cubic-to-hexagonal, as well as the order-disorder transitions from each LC to an isotropic fluid, were easily identified by following the development of the storage and loss moduli, G' and G', respectively. The viscoelastic properties of both bicontinuous cubic phases were shown to be strongly frequency-dependent, following a pseudo-Maxwell behavior, with multiple relaxation times. Cubic-to-cubic transitions were nicely captured by scaling the longest relaxation time, tau, with either temperature or water volume fraction. Therefore, the set of the three main parameters used to establish the rheological behavior of the structure, that is, G', G', and relaxation time, tau, constitutes a consistent ensemble to identify the structures of the liquid crystal. Finally, relaxation spectra, extracted for all liquid crystalline phases, allowed an additional possible identification criterion of the various structures considered.     

Characterization of gels via solvent desorption measurements

The present paper shows how a standard volumetric adsorption device can be used to measure solvent desorption isotherms on gels. As gels are very soft materials, they shrink significantly during the measurement, and the data have to be analyzed in terms of the mechanical properties of the gel’s skeleton. Methanol desorption isotherms are measured on a series of silica gels, and the results are compared with independent characterizations, notably beam bending.     

60]fullerene-pyrrolidine-N-oxides

Eight members of a new family of fullerene derivatives, [60]fulleropyrrolidine-N-oxides, have been synthesized and characterized. Facile oxidation, by a peracid, of the parent [60]fulleropyrrolidine gave clean conversions into the product molecules, in which the tertiary amine is transformed into a quaternary amine bearing an oxygen atom. The reaction is very selective, favoring the nitrogen atom of the pyrrolidine ring in preference to epoxidation of the fullerene cage. The 1H NMR shows an AB quartet splitting pattern, characteristic of nonequivalent hydrogens in the pyrrolidine ring and at a chemical shift displacement of 0.8 ppm downfield. Other methods of characterization are described, including MS, differential scanning calorimetry, thermogravimetric analysis, HPLC, UV/vis, and IR. Conclusive evidence for the formation of an N-oxide moiety is provided by the synthesis, oxidation, and NMR characterization of a novel [60]fulleropyrrolidine containing a 15N isotope, showing an 85 ppm downfield heteroatom chemical shift. Preliminary details of the effects of substitution on the reactivity of the pyrrolidine ring are also reported.     

Direct femtosecond laser writing of waveguides in As2S3 thin films

Single-channel waveguides and Y couplers were fabricated in chalcogenide thin films by use of femtosecond laser pulses from a 25-MHz repetition rate Ti:sapphire laser. Refractive-index differentials (delta n > 10(-2)) were measured through interferometric microscopy and are higher than the typical values reported for oxide glasses. The dependence of the index differential on the peak intensity reveals the nonlinear nature of the photosensitivity in arsenic trisulfide below its bandgap energy, and the refractive-index change is correlated to the photoinduced structural changes inferred by Raman spectroscopy data. A free-electron model to predict the parametric dependence of delta n is proposed.     

Switching in organic devices caused by nanoscale Schottky barrier patches

We have identified a possible electronic origin of metal filaments, invoked to explain the switching behavior of organic devices. Interfaces of two representative organics polyparaphenylene (PPP) and poly(2-methoxy-5-2-ethyl-hexyloxy-1,4-phenylenevinylene) with Ag are investigated using ballistic emission microscopy. Nanometer scale spatial nonuniformity of carrier injection is observed in ballistic electron emission microscopy images of both interfaces. The measured Schottky barrier (SB) appears to be consistent with metal states tailing into the gap of the PPP. We find that the SB values exhibit a distribution, even for the diodes with low ideality factors. The implications of this distribution on the measured physical properties of the diode are discussed, in light of work on devices of similar geometry, published in the literature. We also demonstrate that patches of low SB are likely to nucleate current filaments which can cause local ionization and are reported to be responsible for the switching behavior observed in metal-organic, metal-CuS and Ag-AgSe structures.     

meso‐2,2′‐Di­phenyl‐3,3′,4,4′‐tetra­hydro‐2,2′‐bi­furan‐5,5′(2H,2′H)‐dione

The crystal structure of the title compound, C₂₀H₁₈O₄, contains a crystallographic inversion center. The C—C bond linking the two halves of the mol­ecule is slightly elongated at 1.577 (3) Å.     

Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate

In this paper, we present a comprehensive study of high efficiencies tandem solar cells monolithically grown on a silicon substrate using GaAsPN absorber layer. InGaAs(N) quantum dots and GaAsPN quantum wells have been grown recently on GaP/Si susbstrate for applications related to light emission. For photovoltaic applications, we consider the GaAsPN diluted nitride alloy as the top junction material due to both its perfect lattice matching with Si and ideal bandgap energy for current generation in association with the Si bottom cell. Numerical simulation of the top cell is performed. The effect of layer thicknesses and doping on the cell efficiency are evidenced. In these structures a tunnel junction (TJ) is needed to interconnect both the top and bottom sub-cells. We compare the simulated performances of different TJ structures and show that the GaP(n+)/Si(p+) TJ is promising to improve performances of the current–voltage characteristic.     

Boundary Integral Equations Method for the Analysis of Acoustic Scattering from Line-2 Elastic Targets

The prediction of the acoustic scattering from elastic structures is a recurrent problem of practical importance as, for example, in underwater detection and target identification. We aim at setting out the diffraction problem of a transient acoustic wave by an axisymmetric shell composed of a cylinder bounded by hemispherical endcaps, called Line-2. Its time-dependent response is expanded in terms of the resonance modes of the fluid-loaded structure. The latter are well suited when the structure is submerged in a heavy fluid: it is an alternative to modal methods whose expansions as series of natural modes of the in vacuo shell are much better for describing the interaction between a structure and a light fluid. The resonance frequencies are defined as solutions of the nonlinear eigenvalue problem described by the set of homogeneous equations governing the structure displacement coupled to the acoustic radiated pressure. The resonance modes of the coupled system are the corresponding eigenvectors. Both hemisphere and cylinder equations are modeled by the approximation of Donnel and Mushtari which governs thin shells oscillations. The modeling of the sound pressure by a hybrid potential integral representation leads to a system of integro-differential equations defined on the surface of the structure only (boundary integral equations). The unknowns, the hybrid potential density as well as the shell displacement vector, are developed into Fourier series with respect to the natural cylindrical coordinate. Each angular component of the unknown functions is then expanded as series of Legendre polynomials, the coefficients of which are calculated thanks to a Galerkin method derived from the energetic form of the equations. The whole method can also be applied to predict the response of the coupled structure to a harmonic or a random excitation. This revised version was published online in July 2006 with corrections to the Cover Date.     

In‐plane and out‐of‐plane defects of graphite bombarded by H,D and He investigated by atomic force and Raman microscopies

Graphite samples exposed to H, D and He plasma at fluencies from 10¹⁶ to 10¹⁸ cm⁻² have been investigated by means of atomic force and Raman microscopies. The ion energy was varied between 40 and 800 eV, and the ion incidence was either perpendicular (Highly Oriented Pyrolitic Graphite) or parallel (carbon/carbon composite) to the basal plane. When increasing the impinging ion energy, the growth of nanometric domes at the surface has been observed by atomic force microscopy and the incident kinetic energy has been found as the parameter determining their height. Two different Raman signatures related to (1) a graphitic nano‐crystalline component similar to that of a 10¹⁴ cm⁻² bombarded 1‐, 2‐ and 3‐layer graphene, and to (2) an amorphous component, have been evidenced. Polarization studies have revealed that these components are related to regions with either in‐plane or out‐of‐plane disorder, coexisting in the material. These Raman studies have also revealed that both the defect–defect distance in the first case and the aromatic domain size in the second case are typically 1 nm. When the number of vacancies created in the material increases, the number of in‐plane defects decreases to the benefit of the out‐of‐plane defects. Copyright © 2014 John Wiley & Sons, Ltd.     

Transfer printing of fully formed thin‐film microscale GaAs lasers on silicon with a thermally conductive interface material

High performance semiconductor lasers on silicon are critical elements of next generation photonic integrated circuits. Transfer printing methods provide promising paths to achieve hybrid integration of III‐V devices on Si platforms. This paper presents materials and procedures for epitaxially releasing thin‐film microscale GaAs based lasers after their full fabrication on GaAs native substrates, and for subsequently transfer printing arrays of them onto Si wafers. An indium‐silver based alloy serves as a thermally conductive bonding interface between the lasers and the Si, for enhanced performance. Numerical calculations provide comparative insights into thermal properties for devices with metallic, organic and semiconductor interfaces. Under current injection, the first of these three interfaces provides, by far, the lowest operating temperatures. Such devices exhibit continuous‐wave lasing in the near‐infrared range under electrical pumping, with performance comparable to unreleased devices on their native substrates.