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91.
The problem of a compressible gas flows over a flat plate with the velocity-slip and temperature-jump boundary conditions are being studied. The standard single- shooting method is applied to obtain the exact solutions for velocity and temperature profiles when the momentum and energy equations are weakly coupled. A double-shooting method is applied if these two equations are closely coupled. If the temperature affects the velocity directly, more significant velocity slip happens at locations closer to the plate’s leading edge, and inflections on the velocity profiles appear, indicating flows may become unstable. As a consequence, the temperature-jump and velocity-slip boundary conditions may trigger earlier flow transitions from a laminar to a turbulent flow state. 相似文献
92.
Mössbauer spectra of La1–x
Ba
x
FeO3–y
recorded at room temperature for various values of x show a six-line and/or a single-line subspectrum. The six-line subspectrum with IS=0.41 mm/s and H=52 T results from an orthorhombic perovskite containing only Fe3+ ions. The single-line subspectrum at 0.17 mm/s from a cubic perovskite can be assigned to neither Fe3+ nor Fe4+ but to an intermediate valence state, which may be due to electron hopping between the Fe3+ and Fe4+ ions on the identical octahedral sites. The temperature dependence of electron hopping in the compound La0.40Ba0.60FeO3–y
is presented. 相似文献
93.
Three-dimensional astigmatic resonators, typical examples of which are the resonators bounded by cylindrical-spherical mirrors and cylindrical-cylindrical mirrors oriented at an arbitrary crossed angle, are investigated in detail by using a complex curvature tensor concept and generalized tensor ABCD law. Computerized numerical calculations illustrate some interesting characteristics of these astigmatic resonators. 相似文献
94.
95.
96.
A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes. 相似文献
97.
通过分析激光熔覆过程中光束、粉末和熔池间的作用机理,建立了送粉式激光熔覆材料有效利用率的数学模型,在此基础上推导了送粉角度与工艺参数之间的定量关系式,并计算了不同送粉角度下的熔覆材料有效利用率、熔高和横截面积。结果表明,在熔覆工艺参数不变的条件下,理论计算的熔覆材料有效利用率、熔覆层高度和横截面积均随送粉角度的增加而增大,且均高于实验检测值。激光熔覆过程中,由于粉末烧损和机械损失,使熔覆材料有效利用率、熔高和横截面积随送粉角度变化出现最大值,理想送粉角度为60。 相似文献
98.
本文将自耦调压器与升压变压器相结合,设计出了一种1000V可调脉动直流电源,构思独特,可广泛应用于可调高压大功率电源的设计。 相似文献
99.
We investigate theoretically the temperature effects on the evolution and stability of a separate holographic–Hamiltonian dark–dark or bright–dark soliton pair formed in an unbiased serial photorefractive crystal circuit. Our numerical results show that, for a stable dark–dark or bright–dark soliton pair originally formed in a crystal circuit at given temperatures, when the crystal in which formed a Hamiltonian dark soliton changes, the holographic dark or bright soliton supported by the other crystal tends to evolve into another stable soliton or experiences larger cycles of compression or breaks up into beam filaments or exhibit a common decaying process. The holographic dark soliton is more sensitive to the temperature change than the holographic bright one. 相似文献
100.
Baoqiang Li Dechang Jia Yu Zhou Qiaoling Hu Wei Cai 《Journal of magnetism and magnetic materials》2006
Chitosan/magnetite nanocomposite was synthesized induced by magnetic field via in situ hybridization in ambient condition. Results of XRD patterns and TEM micrographs indicated that magnetite particles with 10–20 nm were dispersed in chitosan homogeneously. An interesting result is that magnetite nanoparticles were assembled to form chain-like structures under the influence of the external magnetic field, which mimics the magnetite chains inside of magnetotatic bacteria. The saturated magnetization (Ms) of nano-magnetite in chitosan was 50.54 emu/g, which is as high as 54% of bulk magnetite. The remanence (Mr) and coercivity (Hc) were 4 emu/g and14.8 Oe, respectively, which indicated that magnetite nanoparticles were superparamagnetic. The key of route is that a pre-precipitated chitosan hydrogel membrane, used as chemical reactor, which controlled the precipitation of chitosan precipitation and in situ transformation of magnetite from the precursor simultaneously in the magnetic field environment. 相似文献