Scattering of time-harmonic elastic waves by an elastic inclusion with quadratic nonlinearity

This paper considers the scattering of a plane, time-harmonic wave by an inclusion with heterogeneous nonlinear elastic properties embedded in an otherwise homogeneous linear elastic solid. When the inclusion and the surrounding matrix are both isotropic, the scattered second harmonic fields are obtained in terms of the Green's function of the surrounding medium. It is found that the second harmonic fields depend on two independent acoustic nonlinearity parameters related to the third order elastic constants. Solutions are also obtained when these two acoustic nonlinearity parameters are given as spatially random functions. An inverse procedure is developed to obtain the statistics of these two random functions from the measured forward and backscattered second harmonic fields.     

The formation of different structures in the interaction between a single femtosecond laser pulse and a thin Au film

The interactions between femtosecond (fs) laser pulses and a thin Au film deposited on a silica glass substrate were systematically investigated based on experimental data. Different structures, including microholes, nanoholes, and nanobumps, are obtained when pulses with different energies are incident on the surface of a gold film. The experimental results are discussed according to specific experimental parameters. Two physical models were constructed in order to explain the experimental results. The formation of nanoholes in a silica substrate is attributed to etching by higher order harmonic generations (HHG) when the femtosecond laser pulse interacts with the generated plasma layer, while the formation of nanobumps on the surface of an Au film is attributed to the elastic and plastic characteristics of the metal film under laser pulse irradiation.     

半绝缘GaAs光电导开关非线性电脉冲超快上升特性研究

利用流体模型对光生载流子的输运进行了模拟研究,结果表明载流子在输运过程中形成的光激发电荷畴是产生电脉冲超快上升特性的主要原因.对光激发电荷畴的形成和吸收过程的进一步研究表明：1)形成过程中的光激发电荷畴增强了电子的浓度梯度;2)光激发电荷畴在被阳极吸收的过程中,光电导开关偏置电压的快速下降能促进电流上升速度.光激发电荷畴的形成和吸收两大过程共同作用下,形成了电脉冲的超快上升特性. 关键词： 光电导开关 非线性模式 光激发电荷畴 上升时间     

Super-thin cloaks mediated by spoof surface plasmons

We demonstrated the possibility of designing super-thin electromagnetic cloaks based on spoof surface plasmon (SSP). Using a metamaterial layer, incident waves can be coupled into SSP efficiently at the air/metamaterial interface. Due to the strong surface confinement of SSP, EM waves are squeezed into and propagate in deep sub-wavelength scales. Implementation of an 8.2 GHz cloak less than 1/50 the cloaking diameter was presented using split ring resonator (SRR). Excellent cloaking effect was verified by simulations. Rather than isolating objects from the background, such cloaks can drastically enhance the field intensity around the cloaked object. This is of particular importance in applications such as weak wave detection and near-field sensing.     

Double threshold behaviour of I－V characteristics of CoSi2/Si Schottky contacts

The forward current－voltage (I－V) characteristics of polycrystalline CoSi₂/n-Si(100) Schottky contacts have been measured in a wide temperature range. At low temperatures (≤200K), a plateau-like section is observed in the I－V characteristics around 10^-4A·cm^-2. The current in the small bias region significantly exceeds that expected by the model based on thermionic emission (TE) and a Gaussian distribution of Schottky barrier height (SBH). Such a double threshold behaviour can be explained by the barrier height inhomogeneity, i.e. at low temperatures the current through some patches with low SBH dominates at small bias region. With increasing bias voltage, the Ohmic effect becomes important and the current through the whole junction area exceeds the patch current, thus resulting in a plateau-like section in the I－V curves at moderate bias. For the polycrystalline CoSi₂/Si contacts studied in this paper, the apparent ideality factor of the patch current is much larger than that calculated from the TE model taking the pinch-off effect into account. This suggests that the current flowing through these patches is of the tunnelling type, rather than the thermionic emission type. The experimental I－V characteristics can be fitted reasonably well in the whole temperature region using the model based on tunnelling and pinch-off.     

用荧光探针签别CYP2C9*3基因

用一种基激复合物荧光探针系统来签别碱基错配的CYP2C9*3基因,该系统选择两个分开的与靶点碱基相对应的12碱基荧光标记的寡核苷酸作为探针,分别对24碱基、47碱基、质粒(3165bp)的靶点CYP2C9基因和CYP2C9*3基因进行杂交配对,结果该基激复合物荧光探针系统能有效签别各种长度的CYP2C9基因和CYP2C9*3基因,背景干扰很低,灵敏度高,可尝试用于其他基因型的遗传多态性的签别。     

荧光光谱数据解析中的信息冗余初步研究

提出了光谱数据解析中的信息冗余系数的问题,从光谱数据处理过程中波段优化选择的方法入手,考察了多环芳烃(polycyclic aromatic hydrocarbons,PAHs)中的蒽、芘和菲三组分混合体系的荧光光谱数据,采用化学计量学中的主成分回归分析和波段变量选择的窗口移动法,通过理论分析和实验论证得到结论:(1)荧光光谱信号中存在信息冗余;(2)经冗余优化后的荧光光谱数据可以反演出更真实的样本的定量信息,对光谱重叠严重的多组分混合体系,采用冗余优化分析过的数据可以增加预测模型的灵敏度和稳定性。     

Investigation of polymer/inorganic hybrid photovoltaic device using quantum dots as the interface modifier

CdS quantum dots (QDs) were introduced as an interface modifier in the poly(3-hexylthiophene) (P3HT)/TiO₂ nanorod arrays hybrid photovoltaic device. The presence of CdS QDs interlayer was found to provide enhanced light absorption, increased interfacial recombination resistance at the P3HT/TiO₂ interfaces, thus leading to a lower recombination rate of the electrons due to the stepwise structure of band edge in P3HT/CdS/TiO₂, which accounts for the observed enhanced photocurrent and photovoltage of the hybrid solar cells. The optimized performance was achieved in P3HT/CdS/TiO₂ hybrid solar cells after deposition of CdS QDs for 10 cycles, with a power conversion efficiency of 0.57 %, which is nearly ten times higher than that of P3HT/TiO₂. The findings indicate that inorganic semiconductor quantum dots provide effective means to improve the performance of polymer/TiO₂ hybrid solar cells.     

Observation of the Fermi-edge singularity in n-doped single asymmetric quantum wells: the influence of residual acceptors

The investigation of the evolution of the photoluminescence spectra, in single asymmetric quantum wells (SAQWs), from a typical emission spectrum to a Fermi-edge singularity, is carried out as a function of both the optical excitation intensity and the temperature. The three samples used here are n-doped, low carrier density (below 5×10¹¹ cm⁻²), GaAs/Al_0.35Ga_0.65As SAQWs grown by molecular beam epitaxy. The strong collective recombination of electrons with different k states up to the Fermi wave vector as well as the optical signature of the Fermi-edge singularity is observed in two samples containing residual acceptors inside the GaAs SAQW. In contrast, a third sample containing no experimental evidence of residual acceptors in the GaAs SAQW shows no optical signature of the Fermi-edge singularity.     

反饱和吸收激发态非线性材料的Z扫描分析

本文用速率方程理论分析了激发志光学非线性材料非线性吸收和折射,通过数值模拟讨论了激发态和基态吸收截面、折射度相互关系等参数对非线性吸收和折射性质的影响。并从理论上分析了C₆₀甲苯溶液的Z扫描实验曲线,它具有强非线性吸收和弱非线性折射。