Low-temperature dry etching of tungsten,dielectric, and trilevel resist layers on GaAs

Dry etching of common masking materials used in GaAs device technology, was examined down to temperatures of –30°C. The etch rates of SiN_x, SiO₂, and W in SF₆/Ar are reduced below 0°C, but the anisotropy of the etching is improved at low temperature. Microwave enhancement of the SF₆/Ar discharges produces increases in etch rates of several times at 25°C, but much lower increases at –30°C substrate temperature. The underlying GaAs surface shows increased S and F coverage after low-temperature etching, but these species are readily removerd either by anex-situ wet chemical cleaning step or an in-situ H₂ plasma exposure. Photoresist etching is less sensitive to temperature, and anisotropic profiles are produced between –30 and +60°C in pure O₂ discharges.     

Signatures of epitaxial graphene grown on Si-terminated 6H-SiC (0 0 0 1)

Epitaxial graphene layers thermally grown on Si-terminated 6H-SiC (0 0 0 1) have been probed using Auger electron spectroscopy, Raman microspectroscopy, and scanning tunneling microscopy (STM). The average multilayer graphene thickness is determined by attenuation of the Si (L₂₃VV) and C (KVV) Auger electron signals. Systematic changes in the Raman spectra are observed as the film thickness increases from one to three layers. The most striking observation is a large increase in the intensity of the Raman 2D-band (overtone of the D-band and also known as the G′-band) for samples with a mean thickness of more than ∼1.5 graphene layers. Correlating this information with STM images, we show that the first graphene layer imaged by STM produces very little 2D intensity, but the second imaged layer shows a single-Lorentzian 2D peak near 2750 cm⁻¹, similar to spectra acquired from single-layer micromechanically cleaved graphene (CG). The 4-10 cm⁻¹ higher frequency shift of the G peak relative to CG can be associated with charge exchange with the underlying SiC substrate and the formation of finite size domains of graphene. The much greater (41-50 cm⁻¹) blue shift observed for the 2D-band may be correlated with these domains and compressive strain.     

Detection of human and rodent 5-HT3B receptor subunits by anti-peptide polyclonal antibodies

Background  

The 5-HT₃ receptor is a member of a neurotransmitter-gated ion channel family which includes nicotinic acetylcholine, GABA_A, and glycine receptors. While antibodies specific for the 5-HT_3A receptor subunit are plentiful, and have revealed a wealth of structural and functional information, few antisera exist for the detection of 5-HT_3B receptor subunits. Here we describe the generation and characterisation of a rabbit polyclonal antiserum that specifically recognises 5-HT_3B receptor subunits     

Dibenzyl Structuresin a Macromolecular Chain. III. Dibenzyldiisocyanates Reactivity

The reactivity of the 2,2′-, 2,4′-, 4,4′-dibenzyldiisocyanate (2,2′-, 2,4′-, 4,4′-DBDI) with n-butanol in benzene has been studied. The concentrations of all species were monitored by using high performance liquid chromatography (HPLC). The reactivity of 4,4′-DBDI is similar to that of 4,4′-diphenylmethanediisocyanate (4,4′-MDI). Very strong intramolecular catalytic effects were noticed in the case of 2,2′-DBDI, probably due to the variable molecular geometry. These effects are responsible for the whole reaction pattern. The 2,4′-DBDI NCO ortho and para groups reactivities are different and comparable to that of 2,4-toluylenediisocyanate (2,4-TDI).     

Phonon density of states of LaFeAsO(1-x)Fx

We have studied the phonon density of states (PDOS) in LaFeAsO(1-x)Fx with inelastic neutron scattering methods. The PDOS of the parent compound (x=0) is very similar to the PDOS of samples optimally doped with fluorine to achieve the maximum Tc (x approximately 0.1). Good agreement is found between the experimental PDOS and first-principles calculations with the exception of a small difference in Fe mode frequencies. The PDOS reported here is not consistent with conventional electron-phonon mediated superconductivity.     

Magnetic splitting of valence states in ferromagnetic and antiferromagnetic lanthanide metals

The magnetic splitting of Delta(2) valence states in the heavy lanthanide metals Gd, Tb, Dy, and Ho was studied in epitaxial films by angle-resolved photoemission, revealing an essentially Stoner-like temperature dependence in all cases. It scales linearly with the 4f spin moment, even in the case of the helical antiferromagnet Ho. Such a behavior can be explained by a substantial localization of the corresponding wave function in the c direction. The helical magnetic structure was confirmed for the thin Ho films by in situ resonant magnetic x-ray diffraction.     

Directional limits on persistent gravitational waves using LIGO S5 science data

The gravitational-wave (GW) sky may include nearby pointlike sources as well as stochastic backgrounds. We perform two directional searches for persistent GWs using data from the LIGO S5 science run: one optimized for pointlike sources and one for arbitrary extended sources. Finding no evidence to support the detection of GWs, we present 90% confidence level (C.L.) upper-limit maps of GW strain power with typical values between 2-20×10(-50) strain(2)?Hz(-1) and 5-35×10(-49) strain(2)?Hz(-1)?sr(-1) for pointlike and extended sources, respectively. The latter result is the first of its kind. We also set 90% C.L. limits on the narrow-band root-mean-square GW strain from interesting targets including Sco X-1, SN 1987A and the Galactic center as low as ≈7×10(-25) in the most sensitive frequency range near 160 Hz.     

The effects of heating on mechanical loss in tantala/silica optical coatings

Second-generation interferometric gravitational-wave detectors will operate at temperatures noticeably above room temperature. Study was done to determine what effect elevated temperatures would have on the Q and coating thermal noise of the detector mirrors. Results show that increased temperature increases loss angle in a manner that is more significant at higher frequencies. Trends show that the increased temperature will have a negligible effect at the low (100 Hz) frequencies important to second-generation detectors.