Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

The Exact Solutions of Some (2 + 1)-Dimensional Integrable Systems

The equivalence of three (2 1)-dimensional soliton equations is proved, and the quite generalsolutionswitha some arbitrary functions of x, t and y respectively are obtained. By selecting the arbitrary functions, many specialtypes of the localized excitations like the solitoff solitons, multi-dromion solutions, lump, and multi-ring soliton solutionsare obtained.     

The Properties of Light Pressure Force with High Order in Laser Fields

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液晶显示器用衬垫料的扫描电镜图像

论述了液晶显示器 (LCD)用衬垫料的作用和性能要求。给出了液晶显示器用衬垫料的扫描电镜图像。该图像对观测衬垫料的粒径分布和控制液晶显示器的盒厚均匀程度 ,消除液晶显示器的底色差异具有一定的意义。实验所得图像为从事液晶显示器的工程技术人员提供了清晰的衬垫料图像 ,为排除衬垫料的不均匀因素所造成的液晶屏的质量问题提供了依据。     

一类平面七次多项式系统赤道环的稳定性与极限环分支

本文研究一类平面七次多项式系统赤道环的稳定性和极限环分支，给出了系统的前12个奇点量公式，可积性条件及在赤道附近存在3个极限环的条件，较为精细地指出了极限环的存在位置。     

Radon空间的非标准表示

证明了在扩大的非标准模型中S-空间可完全表示Radon空间并讨论了S-空间的若干性质.还给出一个有限Borel测度空间为Radon空间的充要条件.最后证明了Radon空间的一个＊-有限表示定理.     

A new method for constructing infinite families of k-tight optimal double loop networks

The double loop network (DLN) is a circulant digraph with n nodes and outdegree 2. DLN has been widely used in the designing of local area networks and distributed systems. In this paper, a new method for constructing infinite families of k-tight optimal DLN is presented. For k = 0,1,…,40, the infinite families of k-tight optimal DLN can be constructed by the new method, where the number nk(t,a) of their nodes is a polynomial of degree 2 in t and contains a parameter a. And a conjecture is proposed.     

19F+27Al耗散反应中双核系统的转动与形变

测量了¹⁹F+²⁷Al耗散反应产物B,C,N,O,F和Ne的激发函数,入射束流的能量从110.25MeV到118.75MeV, 能量步长为250keV. 从产物的 能量自关联函数中提取了反应中所形成的中间双核系统的转动惯量, 与相粘模型计算的刚体转动惯量相比较, 结果表明形成的双核系统有大的形变.     

拟因子试验设计在生产中的应用

根据生产实际,综合利用并列、赋闲列和拟水平试验设计,运用多重比较进行方差分析,寻找水泥熟料的最佳工艺.不仅解决了不同水平多因素试验问题,同时还可考虑交互作用,大大减少了试验次数,从而提高经济效益.     

146Ce核的八级形变带和准γ带

通过测量²⁵²Cf自发裂变所产生的瞬发γ射线, 对¹⁴⁶Ce核的高自旋结构进行了重新研究, 结果更新了以前报道的能级纲图, 把八级形变集体带扩展到更高的自旋, 并且重新构建了可能的准γ带结构. 此外, 用反射不对称壳模型(RASM)对¹⁴⁶Ce核的八级形变带进行了计算, 低自旋处的计算结果与实验数据符合得很好.