低真空管道列车表面压力变化规律研究

既有高速铁路进一步提速受限,构建低真空管道运行超高速列车的发展趋势日益明显.运用滑移网格技术,建立动车组列车和低真空管道的三维耦合模型,考虑管道气体的瞬态压缩效应,分析低真空管道横截面积、动车组列车运行速度、管道环境温度和环境压力对车体表面压力的影响.研究表明,低真空管道横截面积、动车组列车运行速度、管道环境温度和环境...     

Sound absorption characteristics of a thin plate with PZT and shunt circuit I. Theoretical analysis

The feasibility of sound absorbing by a vibrating plate with piezoelectric material and shunt circuits is theoretically investigated. Based on an equivalent compliance of a piezoelectric wafer shunted with RL circuits, the governing equations for the fiexural vibration of the plate with the piezoelectric wafer are derived using Lagrange＇s approach. The equations take into account not only the mass, stiffness and structural damping of the plate and the wafer, but also the electrical resistance and electrical inductance of the RL circuits. By using the governing equations derived, the surface impedance and sound absorption coefficient of the plate backed with a cavity are given. Numerical results show that the sound absorption coefficient of the plate near its first mode can be significantly improved by adjusting the RL parameters.     

Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating

A susceptor structure with a ring channel for a vertical metalorganic chemical vapor deposition reactor by induction heating is proposed. Thus the directions of heat conduction are changed by the channel, and the channel makes the heat in the susceptor redistribute. The pattern of heat transfer in this susceptor is also analyzed. In addition, the location and size of the channel in the susceptor are optimized using the finite element method. A comparison between the optimized and the conventional susceptor shows that the optimized susceptor not only enhances the heating efficiency but also the uniformity of temperature distribution in the wafer, which contributes to improving the quality of the film growth.     

Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90nm Localized Charge-Trapping Non-volatile Memory

As the scaling-down of non-volatile memory （NVM） cells continues, the impact of shallow trench isolation （STI） on NVM cells becomes more severe. It has been observed in the 90nm localized charge-trapping non-volatile memory （NROMTM） that the programming efficiency of edge cells adjacent to STI is remarkably lower than that of other cells when channel hot electron injection is applied. Boron segregation is found to be mainly responsible for the low programming efficiency of edge cells. Meanwhile, an additional boron implantation of 10°tilt at the active area edge as a new solution to solve this problem is developed.     

基于热敏超导边界转变传感的单光子探测技术

单光子探测是实现光量子信息处理的关键技术之一。基于热敏超导边界转变传感的单光子探测技术以其独有的极低的暗计数率、极高的量子探测效率和极强的光子数分辨能力而倍受关注。对比于其他的几种单光子探测技术,如光电倍增管、工作于盖革模式的雪崩二极管和超导纳米线等,本文将从其探测原理、实验样品制备和信号采集处理方法等方面出发,对基于热敏超导边界转变传感单光子探测技术研究的历史、现状进行综述,进而展望其未来可能的发展。     

A Modified Analytic Function Space Feynman Integral of Functionals on Function Space

In this paper, the authors introduce a class of functionals. This class forms a Banach algebra for the special cases. The main purpose of this paper is to investigate some properties of the modified analytic function space Feynman integral of functionals in the class. Those properties contain various results and formulas which were not obtained in previous papers. Also, the authors establish some relationships involving the first variation via the translation theorem on function space. In particular, the authors establish the Fubini theorem for the modified analytic function space Feynman integral which was not obtained in previous researches yet.     

一类拟线性椭圆变分不等式解的存在性(英文)

考虑了一类p-Laplacian拟线性椭圆变分不等式问题,通过运用优化理论中的补偿法和Clark次微分性质,研究了这类椭圆变分不等式解的存在性.     

非最小偏向角测棱镜折射率合成不确定度的探讨

阐述了非最小偏向角法测量棱镜折射率的实验原理,并用广义正交参量作多元回归求灵敏系数法(THM)计算了结果的合成不确定度.     

SiO2包覆共轭聚合物CN-PPV纳米探针的制备与荧光性质

采用纳米沉淀法制备了半导体聚合物CN-PPV纳米粒子,并用改进的Stber方法对纳米粒子进行包覆,获得了发光稳定的SiO2/CN-PPV纳米粒子。用动态光散射(DLS)及透射电镜(TEM)方法对粒子尺寸进行了表征,结果表明包覆前的CN-PPV纳米粒子平均粒径约为30 nm,包覆获得SiO2/CN-PPV纳米粒子的平均粒径约为60 nm。通过紫外-可见吸收光谱及荧光光谱对包覆前后纳米粒子的发光性质进行了比较,发现共轭聚合物CN-PPV包覆后的发射光谱与包覆前相比发生了小的蓝移,表明共轭聚合物的分子构型可能发生了微小变化。SiO2包覆可以提高聚合物发光分子的光稳定性,并且提供用于生物分子耦联的表面,这类材料有望在生物医学成像中获得应用。     

ZnAl2O4：Tb3+荧光粉的合成、结构及其光学性能研究

通过溶胶-凝胶法制备出不同Tb³⁺掺杂浓度和不同二次煅烧温度下的ZnAl₂O₄:Tb³⁺荧光粉, 并利用X射线衍射(XRD)和荧光光谱等对样品进行了表征。由XRD结果可知,当Tb³⁺掺杂的摩尔分数不大于9%,二次煅烧温度在600℃以上时,所得粉体为结晶性良好的尖晶石相。在紫外光激发下,ZnAl₂O₄:Tb³⁺荧光粉的发射光谱由位于488 nm(⁵D₄→⁷F₆)、542 nm(⁵D₄→⁷F₅)、587 nm(⁵D₄→⁷F₄ )和621.5 nm(⁵D₄→⁷F₃)的4个发射峰组成。研究发现,Tb³⁺的掺杂浓度和二次煅烧温度对样品发光强度有着重要影响,当Tb³⁺的摩尔分数为5%,二次煅烧温度为900℃时,ZnAl₂O₄:Tb³⁺荧光粉的发光最强,继续增加Tb³⁺掺杂浓度或提高煅烧温度,分别会出现浓度猝灭和温度猝灭现象。