声矢量锥形阵的高阶累积量波达方向估计

为解决信源在较低信噪比情况下的测向分辨率问题,提出阵列可扩展的声矢量锥形阵测向算法。算法基于四阶累积量的阵列扩展和高斯噪声抑制特性,计算声矢量传声器不同输出分量的四阶累积量,使其在三维方向上扩展与原阵型结构相同的虚拟阵,从而构造包含角度信息的旋转不变矩阵进行测向。推导给出了算法的克拉美罗界,理论分析了算法性能受信噪比、采样快拍以及入射声源俯仰角的影响。仿真实验验证了该算法较常规声矢量阵ESPRIT算法有更优的噪声抑制能力及更高分辨的DOA估计性能。     

原子吸收光谱测定刺五加中金属元素的含量

用原子吸收光谱法测定了刺五加根、茎、叶中Ca、Cu、Mg、Fe、Zn、K、Mn、Na等8种矿物质元素的含量,并对其结果进行了分析比较,以此研究了这8种金属元素在刺五加体内的分布。结果显示：各元素在实验范围内,线性关系良好,加标回收率在99%—109.6%之间,相对标准偏差为0.2%—1.8%。刺五加中不同部位的这8种元素间存在显著差异,根中Ca〉Mg〉K〉Fe〉Na〉Mn〉Zn〉Cu,其叶中的含量以K为高,而且各部位均有较高的Ca、Cu、Mg、Fe、Zn、K、Mn、Na。从微量元素的角度分析,刺五加的根、茎、叶均有一定的应用价值。     

Sound absorption characteristics of a thin plate with PZT and shunt circuit I. Theoretical analysis

The feasibility of sound absorbing by a vibrating plate with piezoelectric material and shunt circuits is theoretically investigated. Based on an equivalent compliance of a piezoelectric wafer shunted with RL circuits, the governing equations for the fiexural vibration of the plate with the piezoelectric wafer are derived using Lagrange＇s approach. The equations take into account not only the mass, stiffness and structural damping of the plate and the wafer, but also the electrical resistance and electrical inductance of the RL circuits. By using the governing equations derived, the surface impedance and sound absorption coefficient of the plate backed with a cavity are given. Numerical results show that the sound absorption coefficient of the plate near its first mode can be significantly improved by adjusting the RL parameters.     

Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90nm Localized Charge-Trapping Non-volatile Memory

As the scaling-down of non-volatile memory （NVM） cells continues, the impact of shallow trench isolation （STI） on NVM cells becomes more severe. It has been observed in the 90nm localized charge-trapping non-volatile memory （NROMTM） that the programming efficiency of edge cells adjacent to STI is remarkably lower than that of other cells when channel hot electron injection is applied. Boron segregation is found to be mainly responsible for the low programming efficiency of edge cells. Meanwhile, an additional boron implantation of 10°tilt at the active area edge as a new solution to solve this problem is developed.     

FR4相对电容率测量实验设计

采用由微带线与射频信号源、频谱分析仪构成的简易实验装置,可准确测量出FR4介质板的相对电容率,降低了射频电路或微带天线设计实验的成本.     

微泡对高强度聚焦超声声压场影响的仿真研究*

微泡对高强度聚焦超声(HIFU)治疗焦域具有增效作用,而HIFU治疗中不同声学条件下微泡对HIFU形成声压场的影响尚不清楚。本文基于气液混合声波传播方程、Keller气泡运动方程、时域有限差分(FDTD)法和龙格-库塔(RK)法数值仿真研究输入声压、激励频率、气泡初始空隙率和气泡初始半径对HIFU形成声压场的影响。研究结果表明,随着输入声压的增大,焦点处声压升高但焦点处最大声压与输入声压的比值减小,焦点位置几乎不变;随着激励频率和气泡初始半径的增大,焦点处声压升高且焦点位置向远离换能器方向移动;随着气泡初始空隙率的增大,焦点处声压降低且焦点位置向换能器方向移动。     

对欧姆表测量误差的进一步讨论

从分析姆表测量的全过程出发,导出了电阻测量不确定度的估计公式。     

电化学方法制备Si阵列微孔的工艺研究

对用电化学方法制备Si大孔阵列管坑工艺进行了初步探索。 通过对Si在KOH溶液中各向异性湿法蚀刻和在HF酸溶液中的电化学蚀刻过程中各种参数的摸索, 确定在室温下制备大孔阵列的最佳配比浓度, 蚀刻出符合要求的管坑阵列, 为进一步制备结构化闪烁屏奠定了实验基础。 The 3 D structures in silicon are increasingly coming to use in many fields. For example, the high resolution X ray digital imaging detector can be made by coupling CCD and the scintillating screen which is made by the array trenches filled with CsI(Tl). In the present work, we explored the technology of etching micro array on the n type silicon with high resistance. By studying the relative parameters of anisotropic etching of KOH and electro chemical etching of HF, the optimized concentration of HF was determined and the micro pore array trenches with 200 μm in depth were realized. The results establish an experimental base for further fabrication of the scintillating screen.     

铽-3,5-二氯水杨酸-N-苯基-乙萘胺三元配合物的合成与表征

用沉淀法在无水乙醇溶液中,合成了铽、3,5-二氯水杨酸(DclSal)、N-苯基-乙萘胺(NphNAm)三元配合物.用元素分析、红外光谱、X射线粉末衍射及荧光光谱等进行了表征.结果表明:三元配合物的化学组成为Tb(DClSal)3(NPhNAm)2,其发射峰位于544 nm,归属于稀土Tb3 离子的5D4→7F5的跃迁.     

赣南新塘萤石矿区地下水元素钙氟变化及其成矿意义

对新塘脉状矿床及其附近地下水的钙、氟元素进行了系统检测,发现钙、氟含量存在明显的空间分布差异。采矿矿床及其附近地下水的钙、氟含量偏高,而2km远的地下水钙、氟含量低且接近流域平均值,两处平均含量相差近10倍。钙、氟的相关性分析显示,水体中钙、氟含量具有很好的相关性,揭示该区萤石矿成矿受沉积物钙氟控制,并与地下水运动密切相关,通过热液循环不断淋滤溶蚀围岩获取钙氟形成萤石矿。由此,矿区的钙氟异常变化可以作为找矿的重要指标。