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921.
We theoretically simulate the influence of the scattering processes of the electrons in the continuum states on the shapes of the photoeurrent spectra of THz quantum well photodetectors. The width of the photocurrent peak should be wider according to the uncertainty relation when these scattering processes lead to shorter relaxation time. We take a simple approximation model to include this influence and calculate the photocurrent spectra, which axe in agreement with experimental results qualitatively. 相似文献
922.
Temperature controlled filamentation is experimentally demonstrated in a temperature gradient gas-filled tube. The proper position of the tube is heated by a furnace and two ends of the tube are cooled by air. The experimental results show that multiple filaments are shrunken into a single filament or no filament only by increasing the temperature at the beginning of the filament. This technique offers another degree of freedom of controlling the filamentation and opens a new way for intense monocycle pulse generation through gradient temperature in a noble gas. 相似文献
923.
We measure zero-field resistivity and magnetoresistance of multiwalled carbon nanotube yarns (CNTYs). The CNTYs are drawn from superaligned multiwalled carbon nanotube arrays synthesized by the low-pressure chemical vapour deposition method. The zero-field resistivity shows a logarithmic decrease from 2 K to 300K. In the presence of a magnetic field applied perpendicular to the yarn axis, a pronounced negative magnetoresistance is observed. A magnetoresistance ratio of 22% is obtained. These behaviours can be explained by the weak localization effect. 相似文献
924.
HU Shi-Gang CAO Yan-Rong HAO Yue MA Xiao-Hua CHEN Chi WU Xiao-Feng ZHOU Qing-Jun 《中国物理快报》2008,25(11):4109-4112
Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT)stresses are studied using NMOSFET with 1.4- nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown. 相似文献
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构造了任意两态叠加多模泛函叠加态光场|ψ(2)f>q,利用多模辐射场广义非线性等幂次高次差压缩的一般理论,研究了态|ψ(2)f>q的广义磁场分量的非线性等幂次N次方差压缩特性.得到了一般理论结果,讨论了两种特殊两态叠加多模泛函叠加态光场的差压缩特性.结果表明:1)当qN为偶数时,第一类两态叠加多模泛函叠加态光场和虚相干两态叠加多模泛函叠加态光场都不出现广义磁场分量的非线性差压缩效应,也不处于N-j最小测不准态;2)当qN为奇数时,在一定条件下,任意两态叠加多模泛函叠加态光场中,广义磁场分量呈现出周期性变化的广义非线性N次方差压缩效应. 相似文献
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