Photochemical Reactions of Carbohydrate Triflates

Abstract

The photochemical reactions of eight carbohydrate trifluoromethanesulfonates (triflates) have been investigated in methanol in the presence of potassium iodide. For those compounds which do not contain an aromatic chromophore, photolysis results in two types of reaction. One type produces deoxy sugars by replacement of the trifluoromethylsulfonyloxy (triflyloxy) group with a hydrogen atom. The second type of reaction generates partially protected sugars by replacement of the trifluoromethylsulfonyl (triflyl) group with a hydrogen atom. When the triflate being irradiated also has a protecting group containing an aromatic ring (i.e., benzyl, benzoyl, or p-tolylsulfonyl group), removal of the protecting group is the exclusive reaction pathway.     

一类非线性边值问题正解的存在性

本文运用锥上的不动点理论,讨论了一类与一阶导函数有关的二阶奇性混合边值问题的正解存在性．     

Synthesis of tetrasubstituted thiophenes from pyridinium 1,4-zwitterionic thiolates and modified activated alkynes

Pyridinium 1,4-zwitterionic thiolates were applied to a formal [3 + 2] annulation reaction with modified activated alkynes, affording various tetrasubstituted thiophenes with aryl, alkenyl, alkyl or silyl group at the special position. The structural modification of alkyne substrates enabled the synthesis of diverse thiophenes to be achieved using the pyridinium 1,4-zwitterionic thiolates as the sulfur-containing building blocks. This approach is metal-free and catalyst-free.     

非晶态超导体的2△0/(kBTc)和声子谱参量

提出了能够很好地描述非过渡金属无序和非晶态超导体的2Δ₀/(k_BT_c)与声子谱参量之间关系的一个公式:2Δ₀(k_BT_c=4.95[1-(T₀<ω>^1/2)/A(1/(λω₀)+1/(20λ<ω>)+1/(20<ω>))]。计算了大量已知声子谱的非晶和无序超导体的能隙2Δ₀对T_c的比,结果表明在百分之几的范围内与实验值符合。指出了非过渡金属和合金的非晶态超导体,既可以是一个2Δ₀/(k_BT_c)值远大于BCS理论值(3.53)的强耦合超导体,也可以是一个2Δ₀/(k_BT_c)值比BCS理论值还要小得多的弱耦合超导体。 关键词：     

外延YIG膜中激发磁模的精细结构

用激发磁波的方式在面内磁化的外延YIG膜上得到了一组等间距、慢衰减的磁模。考虑到磁化强度在模内不均匀性及进动为椭圆进动,导出了模式间距和磁性参数间的关系。和实验比较可以推算出表征不均匀的参数。对于我们的样品,该不均匀性约为2.6—5.8％。 关键词：     

快淬(Er1-xSmx)2Fe17Cy化合物的结构与磁性

用快速急冷方法制备了(Er_1-xSm_x)₂Fe₁₇C_y(x≤0.8,1.5≤y≤2.5)化合物,它们具有菱方Th₂Zn₁₇型结构,并且在高温是稳定的。与相应的不含C的(Er_1-xSm_x)₂Fe₁₇化合物比较,当C含量y=2.5时,引起单胞体积增加～6.3％,居里温度增     

Finite-element calculation of the influence of interdiffusion on eigenstates in a GaAs/Al x Ga1-x As single-quantum-well structure

The influence of interdiffusion on eigenstates in an interdiffusion-induced GaAs/Al_xGa_1-xAs single-quantum-well structure is analysed numerically by the finite element method. In this approach, the confinement potential profile of the interdiffused quantum well structure is nonlinear and is modelled by an error function and, in particular, the nature of the effective mass of an electron is considered. The results show that the number of eigenstates and energy levels varies with the extent of the interdiffusion. Numerical results for the quasi-bound states in the quantum well structure with an applied electric field are also presented.     

优质GaAs/Si和AlGaAs/Si材料的MOCVD生长研究

用自制常压MOCVD装置,在Si衬底上生长GaAs和AlGaAs外延层,在高温去除Si衬底表面氧化膜之后,采用两步法,即低温生长过渡层,再提高温度生长外延层。得到了表面镜面光亮的优质GaAs和AlGaAs外延层。X射线双晶衍射仪测试GaAs外延层,其回摆曲线半峰宽是200孤秒,GaAs和AlGaAs外延层在77K温度下,PL谱半峰宽分别是17meV和24meV。     

激光等离子体能量角分布及吸收定标律

主要研究激光平面靶等离子体发射能量角分布及吸收定标律。实验利用高斯型1.06μm激光脉冲,其能量为2～50J,脉冲宽度为0.3～2.2ns,靶面平均辐照强度为1.8×1013～1.1x10~(15)W/cm~2,光束以25°角入射。实验采用了Au、Ag、Ti、Al和C_8H_8等厚靶。用等离子体卡计测量靶面吸收的激光能量。用指数函数拟合实验数据,给出了吸收效率分别作为激光强度、脉冲宽度和靶材料原子序数的函数的定标关系式。这些关系式定性地与逆轫致吸收的理论关系式相一致。