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991.
Sudden Death of Entanglement between Two Atoms with Initial Tripartite Entangled State in the Tavis--Cummings Model
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We study the entanglement dynamics of two atoms with initial tripartite entangled W-like state in the Tavis-Cummings model. We find that the entanglement evolvement is sensitive not only to the entanglement degree of the initial state but also to the concrete form of the initial state. The so-called sudden death effect occurs only for some initial states. 相似文献
992.
A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm 总被引:2,自引:0,他引:2
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By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12 μm). After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8 μm to 12 μm (centred at 10 μm) within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor. 相似文献
993.
Stationary Fluid Dynamic Behaviour of V-Shaped Diffuser/Nozzle Elements for Valveless Micropump
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A novel type of V-shaped (isosceles triangle cross-section) diffuser/nozzle element is proposed for use for valveless micropump. Stationary fluid dynamic behaviour of V-shaped diffuser/nozzle elements in a valveless micropump is investigated by experiment and simulation. Both the results agree well with each other when the Reynolds number is higher than 100 and the pressure loss coefficient ratio of micropump nearly always keeps a constant. For a single V-shaped diffuser, the general trends of variation of pressure loss coefficient with opening angle and Reynolds number are opposite in small and large angles. Compared with conical and flat-wall diffusers, V-shaped diffuser shows the smallest pressure loss when the Reynolds number is 200. 相似文献
994.
The upgrade project of the Beijing Electron Positron Collider (BEPCII) and its injector linac is working well. The linac upgrade aims at a higher injection rate of 5OmA/min into the storage ring, which requires an injected beam with low emittance, low energy spread and high beam orbit and energy stabilities. This goal is finally reached recently by upgrading the linac components and by dealing with rich and practical beam physics, which are described in this study. 相似文献
995.
We theoretically simulate the influence of the scattering processes of the electrons in the continuum states on the shapes of the photoeurrent spectra of THz quantum well photodetectors. The width of the photocurrent peak should be wider according to the uncertainty relation when these scattering processes lead to shorter relaxation time. We take a simple approximation model to include this influence and calculate the photocurrent spectra, which axe in agreement with experimental results qualitatively. 相似文献
996.
Temperature controlled filamentation is experimentally demonstrated in a temperature gradient gas-filled tube. The proper position of the tube is heated by a furnace and two ends of the tube are cooled by air. The experimental results show that multiple filaments are shrunken into a single filament or no filament only by increasing the temperature at the beginning of the filament. This technique offers another degree of freedom of controlling the filamentation and opens a new way for intense monocycle pulse generation through gradient temperature in a noble gas. 相似文献
997.
We measure zero-field resistivity and magnetoresistance of multiwalled carbon nanotube yarns (CNTYs). The CNTYs are drawn from superaligned multiwalled carbon nanotube arrays synthesized by the low-pressure chemical vapour deposition method. The zero-field resistivity shows a logarithmic decrease from 2 K to 300K. In the presence of a magnetic field applied perpendicular to the yarn axis, a pronounced negative magnetoresistance is observed. A magnetoresistance ratio of 22% is obtained. These behaviours can be explained by the weak localization effect. 相似文献
998.
HU Shi-Gang CAO Yan-Rong HAO Yue MA Xiao-Hua CHEN Chi WU Xiao-Feng ZHOU Qing-Jun 《中国物理快报》2008,25(11):4109-4112
Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT)stresses are studied using NMOSFET with 1.4- nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown. 相似文献
999.
1000.