Zur Bestimmung des St?rkegehaltes in der Gerste und in anderen Getreidearten

Ohne Zusammenfassung     

Robust Output Tracking Control of an Uncertain Linear System via a Modified Optimal Linear-Quadratic Method

This study investigates the robust output tracking problem for a class of uncertain linear systems. The uncertainties are assumed to be time invariant and to satisfy the matching conditions. According to the selected nominal parameters, an optimal solution with a prescribed degree of stability is determined. Then, an auxiliary input via the use of an adapting factor, connected to the nominal optimal control, is introduced to guarantee the robustness and prescribed degree of stability for the output tracking control of the uncertain linear systems. This method is very simple and effective and can reject bounded uncertainties imposed on the states. A maglev vehicle model example is given to show its effectiveness.     

Nickel as a chemical modifier for sensitivity enhancement and fast atomization processes in electrothermal atomic absorption spectrometric determination of cadmium in biological and environmental samples.

A systematic study of the efficiency of protons, Ni, Pd and Th as chemical modifiers for the determination of cadmium by electrothermal atomic absorption spectrometry (ETAAS) using fast temperature programs was made for platform atomization. A comparison was made in terms of the salt type, absorbance-time profiles and elimination of the sodium chloride interference. The results were adapted to develop a method for the ETAAS determination of cadmium in biological and environmental samples. The highest sensitivity to determine cadmium in biological and environmental samples was obtained using nickel (together with protons) as a chemical modifier. The accuracy of the method was tested by the determination of cadmium in different certified reference materials. The best detection limit and the characteristic mass of Cd were found to be 0.03 ng mL(-1) and 0.35 pg, respectively.     

Surface roughness investigation of semi-conductor wafers

Conventionally, surface roughness is predominantly determined through the use of stylus instruments. However, there are certain limitations involved in the method, particularly when a test specimen, such as a silicon wafer, has a smooth mirror-like surface. Hence, it is necessary to explore alternative non-contact techniques. Light scattering has recently been gaining popularity as an optical technique to provide prompt and precise inspection of surface roughness. In this paper, the total integrated scattering (TIS) model is modified to retrieve parameters on surface micro-topography through light scattering. The applicability of the proposed modified TIS model is studied and compared with an atomic force microscope. Experimental results obtained show that the proposed technique is highly accurate for measuring surface roughness in the nanometer range.     

Study of ferroelectric switching by domain-wall induced light scattering

Measurements of 90°-scattering of weak laser light are used to investigate pulsed domain switching in ferroelectrics. The studies were performed on strontium-barium niobate (SBN) single crystals. A good agreement of the switching parameters estimated from the optical measurements with those obtained by means of conventional electrical methods proves the validity of the optical method for switching studies. Due to the limited scattering volume in all three spatial dimensions, the method facilitates local probing of the switching within the crystal bulk. In particular, local specialities of the domain density can be detected. Furthermore, the excellent time resolution inherent in optical probing techniques allows for a comprehensive study of the dynamics.     

Dispersion relations and Omnès representations for $K\to \pi \pi$ decay amplitudes

We derive dispersion relations for decay, using the Lehmann-Symanzik-Zimmermann formalism, which allows the analytic continuation of the amplitudes with respect to the momenta of the external particles. No off-shell extrapolation of the field operators is assumed. We obtain generalized Omnès representations, which incorporate the and S-wave phase shifts in the elastic region of the direct and crossed channels, according to the Watson theorem. The contribution of the inelastic final-state and initial-state interactions is parameterized by the technique of conformal mappings. We compare our results with previous dispersive treatments and indicate how the formalism can be combined with lattice calculations to yield physical predictions. Received: 14 October 2002 / Published online: 14 February 2003     

The K–nucleus cross sections in relativistic non-linear models

The K⁺−nucleus cross sections have been calculated in relativistic non-linear models taking into account the in-medium modifications of nucleons and mesons properties. More precisely, we have taken into account both the dressing of the nucleon effective mass by the scalar nuclear field in the target and the coupling of the mesons exchanged between the K⁺ and the nucleons to the polarization of the medium. First, using the most recent relativistic non-linear models, the in-medium σ, ω and ρ meson masses have been obtained in the nuclear matter rest frame. The influence of the non-linear contributions on the K⁺−nucleus cross sections has then been studied. Finally, we have compared our results with the experimental data.     

Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD

In order to obtain a low band gap photocell based on the widely spread silicon technology, e.g. for thermophotovoltaics, SiGe nanostructures can be introduced into a monocrystalline silicon photocell. Beforehand, it is necessary to know the absorption coefficient of the SiGe quantum wells. On a silicon (1 0 0) substrate multiple Si/SiGe quantum well structures were grown by UHV-CVD. The Ge concentration and the well width were used as growth parameters. To obtain significant absorption, the experiment was set up to allow for 200 internal reflections.The total reflection of the light results in a standing electromagnetic wave. The absorption coefficient was obtained from the experimental data taking the geometry and the electric field distribution in the absorbing layer into account. The influence of well width and germanium content on the absorption was investigated with the goal of maximizing the absorption for photons with energies below the band gap energy of silicon. The measurement results are compared with a theoretical model, which takes the band structure of strained SiGe including confinement effects into account.