Some covering properties in topological and uniform spaces

Recent progress in selection principles theory is discussed and is illustrated mainly by the Hurewicz covering property and its strong version, the Gerlits-Nagy property GN(*). Some results that have not been published elsewhere are given with proofs.     

Magnetic Properties of Metallic Multilayered Systems

Hyperfine Interactions - The giant magnetoresistance (GMR) effect was an epoch-making discovery in the field of magnetic materials research. In this article, studies on magnetic multilayered...     

On the genericity of chaos

Let M be a compact manifold with dimM?2. We prove that some iteration of the generic homeomorphism on M is semiconjugated to the shift map and has infinite topological entropy (Theorem 1.1).     

Property changes of electroplated Cu/Co alloys and multilayers by organic additives

We investigated the change of magnetic properties of the electroplated Cu/Co alloys and multilayers caused by organic additives and high temperature annealing. When plated with a pure Cu/Co electrolyte, the alloy contained ∼25% of Cu and ∼75% of Co. The alloy was made of hcp-Co, fcc-Co and Cu(1 1 1) and was super-paramagnetic at room temperature. As we add a few organic additives in the plating electrolyte, the hcp-Co of the films disappeared. The organic additives contained in the electrolytes changed paramagnetic Cu/Co multilayers to ferromagnets. High-temperature thermal annealing increased coercivity due to the growth of the Co grains.     

Evaluation of closed-vessel microwave digestion method for the determination of trace impurities in polymer-based photoresist by inductively coupled plasma mass spectrometry

A closed microwave digestion method followed by inductively coupled plasma spectrometric (ICP-MS) analysis was evaluated for the determination of trace impurities in photoresist. To optimize the digestion procedure, several digestion parameters such as acid, heating temperature and heating time were evaluated. Besides, the digestion efficiency of used photoresist material and the recovery of analyte elements obtained by the use of gravimetric method and ICP-MS measurement, individually, were also compared to clarify the completeness of digestion. According to our experiments, the gravimetric method was found to be not so relevant to the completeness of digestion, because the remaining sample matrix could cause suppression effect in the subsequent ICP-MS measurement. In view of minimizing blank value and working time, a simple single-step heating program was proposed to mineralize 0.25 ml of photoresist material with 5 ml of nitric acid at 180 °C for 10 min. Based on the comparative study of the analytical results obtained by instrumental neutron activation analysis (INAA) and proposed method, the reliability of proposed method for the determination of trace metallic impurities in photoresist material has been confirmed.     

Formation of p-type ZnO film on InP substrate by phosphor doping

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn₃P₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn₃P₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.     

Modification of Nuclear Decay Constant in the Finite Space

Hyperfine Interactions - The decay constants of nuclei are calculated based on the Cheon's idea, namely, the population of nuclear excited state can be modified by the mechanism that the...     

Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

Al₂O₃ incorporated HfO₂ films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al₂O₃ incorporation. The incorporation of Al₂O₃ into the HfO₂ film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO₂ film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO₂ film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al₂O₃ on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO₂ contributed to Hf silicide formation on the film surface.