Contributions toΛ c + →πΣ,πΛ andp\bar K^0 from excited states

We consider contributions to _c ⁺ , and from excited states. The calculations are performed within the MIT-bag model and a heavy quark bag model. Because the mass of _c ⁺ is rather big compared to the strange baryons, excited baryon states with mass close to that of _c ⁺ in some cases give significant pole contributions to the decay amplitudes of _c ⁺ .     

Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1?0?0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)–voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm^?2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.     

A Systematic Study on the Synthesis of n‐Butyl Substituted 8‐Aminoquinolines

A systematic study on the synthesis of 8‐aminoquinoline derivatives with an n‐butyl group at each alternate position of the quinoline ring was carried out. Skraup Reaction and its Doebner–von Miller variation were used to obtain most of the quinoline ring except for the 2‐butyl‐8‐aminoquinolines and 4‐butyl‐8‐aminoquinolines where the commercially available methylquinoline derivatives were used as precursors. The structures of the synthesized compounds were characterized by FTIR, ¹H‐NMR, COSY, ¹³C‐NMR and HRMS spectra.     

Copolymers of 4-thieno[3,2-b]thiophen-3-ylbenzonitrile with anthracene and biphenyl; synthesis,characterization, electronic,optical, and thermal properties

Two novel copolymers of 4-thieno[3,2-b]thiophen-3-ylbenzonitrile (TT-CN), possessing electron withdrawing cyano moiety, with anthracene (P1) and biphenyl (P2) were prepared via Suzuki coupling. Optic, electronic, and thermal properties of the copolymers were investigated through UV–Vis spectroscopy, cyclic voltammetry, gel permeation chromatography, and thermal gravimetric analysis. The polymers with anthracene and biphenyl had electronic band gaps of 2.01 and 1.90 eV, respectively. Both polymers demonstrated excellent large Stokes shifts of 101 (anthracene) and 105 nm (biphenyl) as well as very good thermal properties. As they had good optical, electronic, and thermal properties, they are promising candidates for electronic applications.     

Multi-dimensional energetic performance modeling of an aircraft engine with the aid of enhanced least–squares estimation based genetic algorithm method

Journal of Thermal Analysis and Calorimetry - Aircraft must have reliable and sustainable sources of power systems and must use energy efficiently. Aircraft engine advances have dramatically...     

Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction

We have studied the effect of the strain relaxation on the band-edge alignments in a Pt/p-Si_1-xGe_x Schottky junction with x=0.14 by internal photoemission spectroscopy and current–voltage measurements. We have shown that the variations in the band-edge alignments can be observed directly by measuring the optical and electrical properties of a simple Schottky junction. The strain in the Si_1-xGe_x layer has been partially relaxed by thermal treatments at two different temperatures. The degree of relaxation and other structural changes have been determined by a high-resolution X-ray diffractometer. Both optical and electrical techniques have shown that the barrier height of the Pt/Si_0.86Ge_0.14 junction increases with the amount of relaxation in the Si_1-xGe_x layer. This shows that the valence-band edge of the Si_1-xGe_x layer moves away from the Fermi level of the Pt/Si_1-xGe_x junction. The band-edge movement results from the increase in the band gap of the Si_1-xGe_x layer after the strain relaxation. This result agrees with the theoretical predictions for the strain-induced effects on the Si_1-xGe_x band structure. Received: 18 October 2000 / Accepted: 19 December 2000 / Published online: 23 March 2001     

Optical anisotropy in GaSe

Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k ⟂ c) and parallel to the c‐axis (k // c). Peak position of the PL emission band and the onset of the transmission have been found to be significantly different for these two cases. This observed anisotropy is related to anisotropic band structure and the selection rules for the optical absorption in layered GaSe. FTIR transmission spectrum is in good agreement with PL results. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)