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941.
Jong Dae Lee Dong-Hwal Lee No-Kuk Park Si Ok Ryu Tae Jin Lee 《Current Applied Physics》2006,6(6):1040
The reduction–carburization of tungsten trioxide (WO3) under carbon monoxide flow was studied in the temperature range of 300–750 °C. The reduction–carburization of WO3 was improved by mechanically mixing with zeolite-HX, -NaX and -KX. The interaction between cation in zeolite-X and oxygen in WO3 affected the improvement of the reduction–carburization of WO3 to WC. Moreover, the improved reduction–carburization of WO3 could lead to the decrease of reaction temperature. Because the particle size of WC is in contact with a reaction temperature, the nanophase WC can be prepared at low temperature. In particular, the particle size of WC was controlled by reaction temperature. The particle sizes of produced WC at 550, 650 and 700 °C were 25, 50 and 100 nm respectively. 相似文献
942.
Y.M. Park Y.J. Park K.M. Kim J.I. Lee K.H. Yoo 《Physica E: Low-dimensional Systems and Nanostructures》2005,25(4):647-653
We have investigated the optical properties of InAs self-assembled quantum dots (SAQDs) with the Si-doped GaAs barrier layer. Two types of samples are fabricated according to the position of the Si-doped GaAs layer. For type A samples the Si-doped GaAs layer is grown below the QDs, whereas for type B samples the Si-doped GaAs layer is grown above the QDs. For both types of samples the excited-state emissions caused by state filling are observed in photoluminescence (PL) spectra at high excitation power densities. The bandgap renormalization of QDs can be found from the shift of the PL peak energy. Particularly, for type A samples the Si atoms act as nucleation centers during the growth of InAs QDs on the Si-doped GaAs layer and affect the density and the size of the QDs. The Si-doped GaAs layer in type A samples has more effects on the properties of QDs, such as state filling and bandgap renormalization than those of type B samples. 相似文献
943.
Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application
Mira Park Byong Hyok Chon Hyun Sun Kim Sae Chae Jeoung Dongho Kim Jeoung-Ik Lee Hye Yong Chu Hyeong Rae Kim 《Optics and Lasers in Engineering》2006,44(2):138-146
Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm2 that is much lower than that of glass substrate (about 1.2–1.6 J/cm2), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation. 相似文献
944.
Polycrystalline Zn1−xCoxO (x=0, 0.02, 0.05, 0.10 and 0.15) oxides have been synthesized by solid state reaction via sintering ZnO and Co powders in open air. X-ray diffraction analyses using Rietveld refinement indicate that a stoichiometric single phase with a wurtzite-like structure was found in Zn1−xCoxO samples with x up to 0.10. The elemental mapping using energy dispersive X-ray spectroscopic analyses presents a uniform distribution of Co. Optical transmittance measurements show that several extra absorption bands appear in the Co-doped ZnO, which is due to the transitions between the crystal-field-split 3d levels of tetrahedral Co2+ substituting Zn2+ ions. Raman measurements show that limited host lattice defects are induced by Co doping. Magnetization measurements reveal that the Co-doped ZnO samples are paramagnetic due to the absence of free carriers and in low temperature the dominant magnetic interaction is nearest-neighbor antiferromagnetic. 相似文献
945.
Ki Mann Jee Dong Chul Park 《International Journal of Infrared and Millimeter Waves》2003,24(12):2105-2117
A spurious-suppressed transversal filter using the multiple-coupled line is proposed. The frequency characteristics of the multiple-coupled line are analyzed in detail. In order to compare the performances, the novel spurious-suppressed transversal filter using triple-coupled half-wavelength directional couplers is designed at 30 GHz. The spurious-suppression characteristics of the proposed transversal filter are verified by the full wave analysis and the measurement. The spurious response of the fabricated filter is effectively suppressed and the large attenuation is obtained in the stopband. 相似文献
946.
An efficient procedure for preparation of the simple alkaloids, 2,3-polymethylene-4(3H)-quinazolinones, luotonin A, tryptanthrin, and rutaecarpine has been established by the reaction of lactam-HCl salts with POCl3 followed by cyclization with methyl anthranilate. 相似文献
947.
InAlAs wet thermal oxidation process was adopted to fabricate ridge waveguide laser diodes. First, applying the oxidation
process on the whole etched surface of an InAlAs upper cladding layer, we formed a current blocking and optical confining
layer of ridge waveguide laser diode. This is a self-aligned structure, which makes the laser diode fabrication steps much
simpler and etching-depth control less important. Assessment of the fabricated laser diode revealed that current-voltage characteristics
and slope efficiency did not worsen, and threshold current was reduced by the oxidation process.
PACS 85.35.Be; 42.55.Px 相似文献
948.
S.I. Jung J.J. Yoon H.J. Park Y.M. Park M.H. Jeon J.Y. Leem C.M. Lee E.T. Cho J.I. Lee J.S. Kim J.S. Son J.S. Kim D.Y. Lee I.K. Han 《Physica E: Low-dimensional Systems and Nanostructures》2005,26(1-4):100
We investigate the effects of a thin AlAs layer with different position and thickness on the optical properties of InAs quantum dots (QDs) by using transmission electron microscopy and photoluminescence (PL). The energy level shift of InAs QD samples is observed by introducing the thin AlAs layer without any significant loss of the QD qualities. The emission peak from InAs QDs directly grown on the 4 monolayer (ML) AlAs layer is blueshifted from that of reference sample by 219 meV with a little increase in FWHM from 42–47 meV for ground state. In contrast, InAs QDs grown under the 4 ML AlAs layer have PL peak a little redshifted to lower energy by 17 meV. This result is related to the interdiffusion of Al atom at the InAs QDs caused by the annealing effect during growing of InAs QDs on AlAs layer. 相似文献
949.
The Gegenbauer reconstruction method was first proposed in 1992, but in early studies no attempts were made to optimize the relevant parameters of this method. These parameters were allowed to grow proportionally with the number of nodes which, in many cases, resulted in exponential convergence for a selected range of the proportionality constants. Early studies also made clear that very large error bounds could be expected if these key parameters were not chosen carefully. Subsequent studies then pointed out that, although unrelated to the method’s analytically predictable domains of poor accuracy, round-off errors could also sabotage the method’s accuracy. The challenge of successfully implementing a Gegenbauer reconstruction then rests on understanding the performance trade-offs we can expect when choosing the key parameters in accordance with different objectives.In this study, we propose a new strategy for choosing optimal parameters in the Chebyshev-Gegenbauer reconstruction method, specifically to achieve numerical stability. This strategy is based on asymptotic analysis as well as minimization problems in one and two dimensions. The effectiveness of our approach, which could also be applied to a wider selection of polynomials is then illustrated with results from numerical experiments. 相似文献
950.
We present a first-principles investigation of the phonon-induced electron self-energy in graphene. The energy dependence of the self-energy reflects the peculiar linear band structure of graphene and deviates substantially from the usual metallic behavior. The effective band velocity of the Dirac fermions is found to be reduced by 4%-8%, depending on doping, by the interaction with lattice vibrations. Our results are consistent with the observed linear dependence of the electronic linewidth on the binding energy in photoemission spectra. 相似文献