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191.
From detailed high-resolution measurements of the photon energy dependence of the (pi,0) superconducting-state photoemission spectrum of the bilayer Bi high-temperature superconductors, we show that the famous peak-dip-hump line shape is dominated by a superposition of spectral features originating from different electronic states which reside at different binding energies, but are each describable by essentially identical single-particle spectral functions. The previously identified bilayer-split CuO2 bands are the culprit: with the "superconducting" peak being due to the antibonding band, while the hump is mainly formed by its bonding bilayer-split counterpart.  相似文献   
192.
Angle-resolved photoemission spectroscopy is used to study the mass renormalization of the charge carriers in the high-T(c) superconductor (Pb,Bi)2Sr2CaCu2O8 in the vicinity of the (pi,0) point in the superconducting and the normal states. Using matrix element effects at different photon energies and due to a high momentum and energy resolution the bonding and the antibonding bands could be separated in the whole dopant range. A huge coupling to a bosonic collective mode is observed below T(c) for both bands, in particular, for the underdoped case. Above T(c), a weaker coupling to a continuous spectrum of modes is detected.  相似文献   
193.
A gel of single-wall carbon nanotubes in an ionic liquid has been prepared using the technique of mixing nanotubes with ionic liquids. The gel obtained has a high concentration of nanotubes (~1%). The absorption spectra of the gel and its individual components have been measured. The absorption spectrum of the gel exhibits reconstruction of the electronic and vibrational spectra of the gel with respect to its individual components. This reconstruction is explained by the interaction of nanotubes with the ionic liquid in the gel structure. Reconstruction of the electronic subsystem of nanotubes has also been observed in a suspension of nanotubes in an aqueous solution of a surfactant.  相似文献   
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We use angle-resolved photoemission with circularly polarized excitation to demonstrate that in the 5 x 1 superstructure-free (Pb,Bi)(2)Sr(2)CaCu(2)O(8+delta) (Pb-Bi2212) material there are no signatures of time-reversal symmetry breaking in the sense of the criteria developed earlier [Nature (London) 416, 610 (2002)]]. The dichroic signal retains reflection antisymmetry as a function of temperature and doping and in all mirror planes, precisely defined by the experimental dispersion at low energies. The obtained results demonstrate that the signatures of time-reversal symmetry violation in pristine Bi2212, as determined by angle-resolved photoemission spectroscopy, are not a universal feature of all cuprate superconductors.  相似文献   
197.
Kinetics and Catalysis - A ternary heterosystem consisting of crystalline graphitic carbon nitride, zinc oxide, and zinc sulfide (g-C3N4/ZnO/ZnS) was obtained by the one-stage decomposition of a...  相似文献   
198.
Radical copolymerization of N-vinylpyrrolidone and 2-aminoethyl methacrylate hydrochloride has been studied. Molecular and hydrodynamic characteristics of the resulting copolymers have been determined, and their structure has been confirmed. Conditions favoring conversion of these copolymers into copolymers of N-vinylpyrrolidone with 2-aminoethyl methacrylate of different composition have been elucidated. The suitability of the prepared copolymers as polymeric carriers of monofluoroquinolone ofloxacin has been demonstrated.  相似文献   
199.
Group III–V semiconductor nanostructures are important materials in optoelectronic devices and are being researched in energy‐related fields. A simple approach for the synthesis of these semiconductors with well‐defined nanostructures is desired. Electroless deposition (galvanic displacement) is a fast and versatile technique for deposition of one material on another and depends on the redox potentials of the two materials. Herein we show that GaSb can be directly synthesized at room temperature by galvanic displacement of SbCl3/ionic liquid on electrodeposited Ga, on Ga nanowires, and also on commercial Ga. In situ AFM revealed the galvanic displacement process of Sb on Ga and showed that the displacement process continues even after the formation of GaSb. The bandgap of the deposited GaSb was 0.9±0.1 eV compared to its usual bandgap of 0.7 eV. By changing the cation in the ionic liquid, the redox process could be varied leading to GaSb with different optical properties.  相似文献   
200.
JETP Letters - The comparison of optical oscillators is used both to determine their spectral characteristics and to perform fundamental research. To describe each individual laser system, it is...  相似文献   
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