Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

An Integrated Selection Formulation for the Best Normal Mean: The Unequal and Unknown Variance Case

This paper considers an integrated formulation in selecting the best normal mean in the case of unequal and unknown variances. The formulation separates the parameter space into two disjoint parts, the preference zone (PZ) and the indifference zone (IZ). In the PZ we insist on selecting the best for a correct selection (CS₁) but in the IZ we define any selected subset to be correct (CS₂) if it contains the best population. We find the least favorable configuration (LFC) and the worst configuration (WC) respectively in PZ and IZ. We derive formulas for P(CS₁|LFC), P(CS₂|WC) and the bounds for the expected sample size E(N). We also give tables for the procedure parameters to implement the proposed procedure. An example is given to illustrate how to apply the procedure and how to use the table.     

Two inequalities involving Hadamard products of positive semi-definite Hermitian matrices

We extend two inequalities involving Hadamard products of positive definite Hermitian matrices to positive semi-definite Hermitian matrices. Simultaneously, we also show the sufficient conditions for equalities to hold. Moreover, some other matrix inequalities are also obtained. Our results and methods are different from those which are obtained by S. Liu in [J. Math. Anal. Appl. 243:458–463(2000)] and B.-Y. Wang et al. in [Lin. Alg. Appl. 302–303: 163–172(1999)].     

ON A LINEAR DELAY DIFFERENCE EQUATION WITH IMPULSES

IIntroductlonLet N denote the set of all Integers．FOr any a;b E N,define N(a)＝{a,a＋1,…},N(a,b)二{a,a＋1,…,b}when a＜b．Consider the dlf卜巳renceequationl 凸x。＋P。x。－。＝0;nEN(0)andN4n。;2—“－””’”门二l0 凸X。,＝~X。,,JENO);where A denotes the forward difference operator八。。＝x。＋l一 x。,{P。} Isa sequence ofnon－negative real numbers,{nj}Is a sequence ofnon－negativeIntegers with nj＜nj＋lfor j E N(1)and nj一 co as ;一 co,{4}Is a sequence。I优。且皿mb ers,…     

Large set of P3‐decompositions

Let G=(V(G),E(G)) be a graph. A (n,G, λ)‐GD is a partition of the edges of λK_n into subgraphs (G‐blocks), each of which is isomorphic to G. The (n,G,λ)‐GD is named as graph design for G or G‐decomposition. The large set of (n,G,λ)‐GD is denoted by (n,G,λ)‐LGD. In this work, we obtain the existence spectrum of (n,P₃,λ)‐LGD. © 2002 Wiley Periodicals, Inc. J Combin Designs 10: 151–159, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/jcd.10008     

一种新型彩色三维光学成像系统

提出一种新型三维彩色光学数字成像系统。此系统利用投影结构光对现实世界中的物体进行数字化，同时得到对应的彩色纹理。详细介绍了系统的硬件设计和软件体系结构设计，得到物体彩色纹理的两种不同方法；直接获取和从编码条纹中提取，给出了用该系统得到的实验结果并简单评价了系统的性能。此系统在反求工程、影视制作、三维游戏制作、医学应用等方面有远大的应用前景。     

利用振幅调制器进行光电负反馈抑制激光强度噪声

采用振幅调制器作为抑制激光强度噪声的元件，首先对光电负反馈回路进行了简要的理论分析，然后利用该光电负反馈进行抑制激光二极管抽运全固化单频环形Nd:YVO4红外激光器强度噪声的实验。结果表明，在0－1MHz的低频段，强度噪声大幅度降低，最大降低约15dB。     

An optical measurement of vortex shape at a free surface

We have proposed an optical method of vortex shape measurement based on Fourier transform profilometry (FTP) and verified it by experiment. The results of our experiment proposed in this paper show that FTP can efficiently reconstruct the vortex shape at a free surface and this method is suitable for wide use in studying such problems as liquid shear flow, wake of an object, flow behind a bluff body, and wetting angle.     

利用微悬臂梁表面应力研究聚N-异丙基丙烯酰胺分子的构象转变

提出了一种基于微悬臂梁传感技术研究大分子折叠/构象转变的新方法.通过分子自组装的方法将热敏性的聚N-异丙基丙烯酰胺(PNIPAM)分子链修饰到微悬臂梁的单侧表面,用光杠杆技术检测温度在20-40 ℃之间变化时由于微悬臂梁上的PNIPAM分子在水中的构象转变所引起的微悬臂梁变形.实验结果显示:在升温过程中,微悬臂梁的表面应力发生了变化并且导致微悬臂梁产生了弯曲变形,这个过程对应着微悬臂梁上的PNIPAM分子从无规线团构象到塌缩小球构象的构象转变.在降温过程中,微悬臂梁发生了反方向的弯曲变形,这对应着PNIPAM分子从塌缩小球构象向无规线团构象的构象转变.整个温度变化过程中构象转变是连续进行的,而在低临界溶解温度(约32 ℃)附近转变幅度较大,这与自由水溶液中PNIPAM分子的无规线团-塌缩小球构象转变相对应.实验结果还显示:由于PNIPAM分子在塌缩过程中氢键的形成和链段间可能的缠结效应,整个温度循环过程中微悬臂梁的变形是不可逆的且有明显的迟滞效应.