Electron spin resonance study of free radicals in the radiation grafting of butadiene to poly(vinyl chloride)

The kinetics of the disappearance of propagating butadiene radicals produced in the grafting of butadiene to poly(vinyl chloride) was followed by electron spin resonance measurements. The radical species observed in the temperature range 213–298°K is the conjugated allylic radical: The reaction conditions were adjusted to provide a highly viscous medium in which the propagation reaction took place. Under these conditions the radicals were stabilized and a precise ESR spectrum was obtained. Arrhenius plots of the second-order decay rate constants yield an activation energy of 5 kcal/mole. This suggests that the bimolecular termination reaction is controlled by the segmental motion of the grafted side chains.     

Extended Born-Green equation: A new approach for determining pair potentials in disordered systems

The Born-Green equation was tested using molecular dynamics data for liquid rubidium at 319 K. The unsatisfactory results of this equation for the pair potential are caused by the insufficient precision of the Kirkwood approximation for describing the triplet correlation function g₃(r,s,t). A more realistic ansatz for g₃(r,s,t) was employed in the formulation of an extended Born-Green equation. This new approach gives much better results for the potential than the simple Born-Green equation.     

Upper limit for DD production in pp interactions at C.M. energy of 55 GeV

From a search for e^±μ^± production at the CERN ISR an upper limit of 0.92 μb (95% confidence limit) has been inferred for σ·B_e·B_μ for the reaction $\text{p}\text{+}\text{p}\text{→}\text{D}\text{+}\text{D}\text{+}\text{X}\text{at}\text{√s}\text{of}\text{55}\text{GeV}$.     

Feldionen-Mikroskopie und Massen-Spektroskopie von schwefelbedeckten Ag-Oberfl?chen

Ohne Zusammenfassung     

Optical microscopic,X-ray diffraction,and electrical resistance studies of CuCl at high pressure

Electrical resistance and X-ray diffraction measurements and also optical observations under a polarizing microscope were made on CuCl to pressures in excess of 12.5 GPa at room temperature using a diamond anvil cell. Resistance measurements were also performed in a piston-cylinder apparatus to pressures of approximately 5.5 GPa at room temperature. Three samples of CuCl prepared by different methods were examined. No anomalous pressure dependence in electrical resistance was found in the pressure range studied, and no dramatic changes in optical transmission were observed up to pressures of approximately 10.0 GPa. Optical observations and X-ray diffraction measurements indicate the existence of four phases in the pressure range studied, including a nonconducting black opaque phase which grows with time when CuCl is left for several days at the highest pressures.     

Field evaporation of silicon surfaces

Quantitative measurements on field evaporation of Si(111) surfaces in hydrogen imaging gas have been carried out by field ion microscopy. The field evaporation rate is found to increase exponentially with increase of the reciprocal of tip temperature in the range 80–103 K. The evaporation field strength increases with increase of tip temperature in the investigated range, 80–300 K. Within the applied pressure range, 5× 10^?6 to 2 × 10^?4 Torr of hydrogen gas, the evaporation rate linearly increases with the gas pressure. Similar effects of temperature and gas pressure on field evaporation of Si(111) surfaces have been observed also in silane imaging gas. A model, based on a field-induced formation of surface hydrides as a rate-determining step, is proposed, which accounts for all the experimental results of the field evaporation process.