基于同步辐射加速器的康普顿背散射γ射线源(Ⅰ)产生MeV量级γ光子的数值计算

提出在筹建的上海同步辐射装置上建造一条MeV量级γ射线束及应用站,采用μm波长的红外(或远红外)激光与储存环中3.5GeV电子束进行康普顿背散射,从而获得能区为1—25MeV的康普顿背散射γ光子束,该光子束具有高强度、高极化度(线和圆极化)、准单色、方向性好的优点,可以广泛地应用于核物理和核天体物理基础研究及相关的应用研究领域.介绍了康普顿背散射的基本原理,并结合储存环参数给出了光子束性能的数值计算结果.     

微光像增强器图像传递信噪比的测试研究

图像传递信噪比是微光像增强器的重要特性参数．能够全面定量地表征像增强器在探测弱辐射图像时的综合性能，对于确定像增强器的图像探测灵敏闽具有重要意义。针对其测试原理．采用高灵敏度低噪声CCD器件作为像管输出图像的探测接收器．并引入数字图像处理技术。利用设计的测试系统实现了典型目标图像传递信噪比的自动测试．多次实验结果表明．陔测试系统具有测试过程自动快速及测试数据准确稳定的优点．相同测试条件下的不确定度优于±3%。     

ROBUST GLOBAL EXPONENTIAL STABILITY OF UNCERTAIN IMPULSIVE SYSTEMS

By using the quasi-Lyapunov function, some sufficient conditions of global exponential stability for impulsive systems are established, which is the basis for the following discussion. Then, by employing Riccati inequality and Hamilton-Jacobi inequality approach, some sufficient conditions of robust exponential stability for uncertain linear/nonlinear impulsive systems are derived, respectively. Finally, some examples are given to illustrate the applications of the theory.     

The structure of invertible substitutions on a three-letter alphabet

We study the structure of invertible substitutions on three-letter alphabet. We show that there exists a finite set of invertible substitutions such that any invertible substitution can be written as I_wσ₁σ₂σ_k, where I_w is the inner automorphism associated with w, and for 1jk. As a consequence, M is the matrix of an invertible substitution if and only if it is a finite product of non-negative elementary matrices.     

非线性光纤环形镜的脉冲透过特性研究

研究了光纤反常色散区非线性环形镜（NOLM）的脉冲透过特性，得到NOLM周期性透过率函数 第一极大值处透过率、压缩比和对应的孤子阶数与环长之间的函数关系图.通过比较长环和 短环NOLM对无啁啾、啁啾脉冲的透过率和压缩比特性，得出了长环有利于脉冲整形而短环有 利于脉冲压缩的结论. 关键词： 非线性环形镜 透过率 压缩比 孤子阶数     

前缘弯掠斜流转子叶顶间隙流动特性数值分析

本文对前缘弯掠斜流转子叶顶间隙内的流动特性进行了数值分析。结果表明:叶顶间隙气流与主流发生卷吸而生成泄漏涡。泄漏涡作用的区域具有较低的压力分布。在叶片通道内,泄漏涡沿着与转子旋向相反的方向朝相邻叶片的压力面移动。大间隙时的泄漏涡比小间隙时强烈。低流量时泄漏涡的作用区域比高流量时大。在各种流量特性下,叶顶尾缘近吸力面区域都存在着二次间隙流。     

具P-Laplacian算子型周期边值问题解的存在性

本文利用拓扑度理论和一些分析技巧讨论了具p—Laplacian算子型周期边值问题(φp(χ’))’+d/dt gradF(χ)+gradG(χ)=e(t),χ(0)=χ(T),χ’(0)=χ’(T)解的存在性,在对阻尼项d/dtgradF(χ)没有任何限制的前提下,给出了解存在的充分条件.     

Synthesis,structure, spectroscopic and magnetic properties of a novel two-dimensional copper(II) complex Na2[Cu(pba)] · 6H2O [pba = 1,3-propylenebis(oxamato)]

The copper(II) complex Na₂[Cu(pba)] · 6H₂O has been synthesized and its structure determined. It consists of a novel two-dimensional network of [Cu(pba)]^2– anions connected to each other through the sodium ion as a bridge. Spectroscopic and magnetic properties have been measured and a spin distribution calculation has been carried out with the GAUSSIAN-94. Theoretical calculations indicate the rather larger spin density on nitrogen atoms should be responsible for the satellite lines appearing beside the main hyperfine coupling signs of copper(II). The antiferromagnetic interaction may be due to the intermolecular interaction and/or different copper(II) ions through the Na⁺ bridge in the same layer.     

浮栅ROM器件辐射效应机理分析

分析了浮栅ROM器件的辐射效应机理，合理地解释了实验中观察到的现象.指出辐射产生的电子空穴对在器件中形成的氧化物陷阱电荷和界面陷阱电荷是导致存储单元及其外围电路出现错误的原因.浮栅ROM器件的中子、质子和⁶⁰Co γ辐射效应都是总剂量效应 . 关键词： FLASH ROM EEPROM 中子 质子 60Co γ')" href="#">⁶⁰Co γ 总剂量效应     

Band bending at the Ni/Si(100)-2×1 submonolayer interface

Band bending at the Ni/Si(100)-2×1 interface has been monitored by using Si 2p core level photoemission spectra. Two nickel-induced Si 2p components appear in the initial interaction between Ni and Si(100)-2×1, which is confined at the top surface and the first subsurface layers. At Ni coverage less than 0.0375 ML, Ni atoms prefer the adamantane interstitial sites on the first subsurface, but switch to the pedestal sites on Si dimer rows at higher Ni coverage. The change in the preferred occupation sites of Ni atoms on the Si(100)-2×1 surface strongly affects the amount of band bending shift. The shift towards higher binding energy, when Ni atoms occupy the adamantane interstitial sites, is attributed to metal-induced-gap states. While Ni atoms occupy the pedestal sites, the band bending shift is reduced which is attributed to the passivation of surface states.