Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.     

前缘弯掠斜流转子叶顶间隙流动特性数值分析

本文对前缘弯掠斜流转子叶顶间隙内的流动特性进行了数值分析。结果表明:叶顶间隙气流与主流发生卷吸而生成泄漏涡。泄漏涡作用的区域具有较低的压力分布。在叶片通道内,泄漏涡沿着与转子旋向相反的方向朝相邻叶片的压力面移动。大间隙时的泄漏涡比小间隙时强烈。低流量时泄漏涡的作用区域比高流量时大。在各种流量特性下,叶顶尾缘近吸力面区域都存在着二次间隙流。     

A Generalization of the Mean Size Formula of Wavelet Packets in Lp

The purpose of this paper is to investigate the mean size formula of wavelet packets in Lp for 0 〈 p ≤ ∞. We generalize a mean size formula of wavelet packets given in terms of the p-norm joint spectral radius and we also give some asymptotic formulas for the Lp-norm or quasi-norm on the subdivision trees. All results will be given in the general setting,     

具P-Laplacian算子型周期边值问题解的存在性

本文利用拓扑度理论和一些分析技巧讨论了具p—Laplacian算子型周期边值问题(φp(χ’))’+d/dt gradF(χ)+gradG(χ)=e(t),χ(0)=χ(T),χ’(0)=χ’(T)解的存在性,在对阻尼项d/dtgradF(χ)没有任何限制的前提下,给出了解存在的充分条件.     

Synthesis,structure, spectroscopic and magnetic properties of a novel two-dimensional copper(II) complex Na2[Cu(pba)] · 6H2O [pba = 1,3-propylenebis(oxamato)]

The copper(II) complex Na₂[Cu(pba)] · 6H₂O has been synthesized and its structure determined. It consists of a novel two-dimensional network of [Cu(pba)]^2– anions connected to each other through the sodium ion as a bridge. Spectroscopic and magnetic properties have been measured and a spin distribution calculation has been carried out with the GAUSSIAN-94. Theoretical calculations indicate the rather larger spin density on nitrogen atoms should be responsible for the satellite lines appearing beside the main hyperfine coupling signs of copper(II). The antiferromagnetic interaction may be due to the intermolecular interaction and/or different copper(II) ions through the Na⁺ bridge in the same layer.     

Effect of ion impinging on the microstructure and field emission of carbon nanotubes

Effects of ion impinging on the microstructure and field electron emission properties of screen-printed carbon nanotube films were investigated. We observed that the plasma treatment modified the microstructure of CNTs along with the remarkable increase of emission site density. With the prolongation of ion impinging time, the emission current falls down first, and then rises up to higher than that of the untreated films. It is proposed that the change of emission characteristics is due to the different emission mechanisms. After the treatment, electrons are emitted predominantly from the nano-nodes on the tube wall instead from the nanotube tips.     

Crystallization and morphology of poly(vinylidene fluoride)/poly(3‐hydroxybutyrate) blends. I. Spherulitic morphology and growth by polarized microscopy

The development of the poly(3‐hydroxybutyrate) (PHB) morphology in the presence of already existent poly(vinylidene fluoride) (PVDF) spherulites was studied by two‐stage solidification with two separate crystallization temperatures. PVDF formed irregular dendrites at lower temperatures and regular, banded spherulites at elevated temperatures. The transition temperature of the spherulitic morphology from dendrites to regular, banded spherulites increased with increasing PVDF content. A remarkable amount of PHB was included in the PVDF dendrites, whereas PHB was rejected into the remaining melt from the banded spherulites. When PVDF crystallized as banded spherulites, PHB could consequently crystallize only around them, if at all. In contrast, PHB crystallized with a common growth front, starting from a defined site in the interfibrillar regions of volume‐filling PVDF dendrites. It formed by itself dendritic spherulites that included a large number of PVDF spherulites. For blends with a PHB content of more than 80 wt %, for which the PVDF dendrites were not volume‐filling, PHB first formed regular spherulites. Their growth started from outside the PVDF dendrites but could later interpenetrate them, and this made their own morphology dendritic. These PHB spherulites melted stepwise because the lamellae inside the PVDF dendrites melted at a lower temperature than those from outside. This reflected the regularity of the two fractions of the lamellae because that of those inside the dendrites of PVDF was controlled by the intraspherulitic order of PVDF, whereas that from outside was only controlled by the temperature and the melt composition. The described morphologies developed without mutual nucleating efficiency of the components. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 873–882, 2003     

偏振分束器对光学电流传感器稳定性的影响

采用偏振光学理论,详细分析了光学电流传感器中偏振分束器消光比的变化对传感器性能的影响,得到了偏振分束器消光比与传感器输出的关系式,并用系统实验进行了验证.理论及实验结果的吻合证明了光学电流传感器稳定性直接受偏振分束器两路消光比影响的结论.     

Raman properties embeddedof GaSb nanoparticlesin SiO2 films

The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.     

浮栅ROM器件辐射效应机理分析

分析了浮栅ROM器件的辐射效应机理，合理地解释了实验中观察到的现象.指出辐射产生的电子空穴对在器件中形成的氧化物陷阱电荷和界面陷阱电荷是导致存储单元及其外围电路出现错误的原因.浮栅ROM器件的中子、质子和⁶⁰Co γ辐射效应都是总剂量效应 . 关键词： FLASH ROM EEPROM 中子 质子 60Co γ')" href="#">⁶⁰Co γ 总剂量效应