Element specific surface reconstructions of islands during surfactant-mediated growth on Si (111)

The early stages of surfactant- (As, Sb) mediated homoepitaxial growth on Si (111) are examined by scanning tunneling microscopy and extensive ab initio calculations of Si(n) clusters (n相似文献   

Intra-organizational Networks and Performance: A Review

Intra-organizational network research had its first heyday during the empirical revolution in social sciences before World War II when it discovered the informal group within the formal organization. These studies comment on the classic sociological idea of bureaucracy being the optimal organization. Later relational interest within organizational studies gave way to comparative studies on the quantifiable formal features of organizations. There has been a resurgence in intra-organizational networks studies recently as the conviction grows that they are critical to organizational and individual performance. Along with methodological improvements, the theoretical emphasis has shifted from networks as a constraining force to a conceptualization that sees them as providing opportunities and finally, as social capital. Because of this shift it has become necessary not only to explain the differences between networks but also their outcomes, that is, their performance. It also implies that internal and external networks should no longer be treated separately.Research on differences between intra-organizational networks centers on the influence of the formal organization, organizational demography, technology and environment. Studies on outcomes deal with diffusion and adaptation of innovation; the utilization of human capital; recruitment, absenteeism and turnover; work stress and job satisfaction; equity; power; information efficiency; collective decision making; mobilization for and outcomes of conflicts; social control; profit and survival of firms and individual performance.Of all the difficulties that are associated with intra-organizational network research, problems of access to organizations and incomparability of research findings seem to be the most serious. Nevertheless, future research should concentrate on mechanisms that make networks productive, while taking into account the difficulties of measuring performance within organizations, such as the performance paradox and the halo-effect.     

The ready conversion of anguidine into verrucarol and trichodermol

Anguidine, $\text{1}$, is readily converted into verrucarol diacetate, $\text{2d}$, in 85 percent yield by application of the Barton-McCombie deoxygenation procedure. To enable conversion into trichodermol, $\text{3a}$, the primary hydroxyl group of verrucarol, $\text{2a}$, is selectively acetylated or is selectively acetylated or preferably silylated, thereby paving the way for its deoxygenation in three simple, high-yield reactions.     

Saturation of gauge-invariant Schwinger-model correlation functions by instantons

We draw some conclusions from the saturation of QED₂ correlation functions by non-quasiclassical instantons.     

Characterization of the smectic-A-hexatic-B transition in 65OBC by adiabatic scanning calorimetry

We investigated the smectic-A-hexatic-B (SmA-HexB) transition in the liquid-crystal n-hexyl-4-n-pentyloxybiphenyl-4-carboxilate (65OBC) with adiabatic scanning calorimetry. We were able to prove in a direct way that this transition is indeed very weakly first order, as was already suggested in the literature. The latent heat at the transition was determined to be H_L = 0.04±0.02 J/g. Our experiments confirm the high value for the heat capacity critical exponent earlier reported, yielding = 0.64±0.05.     

LambdaO4 upside down: a new molecular structure for supported VO4 catalysts

Vanadium oxide (1 wt %) supported on gamma-Al(2)O(3) was used to investigate the interface between the catalytically active species and the support oxide. Raman, UV-vis-NIR DRS, ESR, XANES, and EXAFS were used to characterize the sample in great detail. All techniques showed that an isolated VO(4) species was present at the catalyst surface, which implies that no V-O-V moiety is present. Surprisingly, a Raman band was present at 900 cm(-1), which is commonly assigned to a V-O-V vibration. This observation contradicts the current literature assignment. To further elucidate on potential other Raman assignments, the exact molecular structure of the VO(4) entity (1 V=O bond of 1.58 A and 3 V-O bonds of 1.72 A) together with its position relative to the support O anions and Al cation of the Al(2)O(3) support has been investigated with EXAFS. In combination with a structural model of the alumina surface, the arrangement of the support atoms in the proximity of the VO(4) entity could be clarified, leading to a new molecular structure of the interface between VO(4) and Al(2)O(3). It was found that VO(4) is anchored to the support oxide surface, with only one V-O support bond instead of three, which is commonly accepted in the literature. The structural model suggested in this paper leaves three possible assignments for the 900 cm(-1) band: a V-O-Al vibration, a V-O-H vibration, and a V-(O-O) vibration. The pros and cons of these different options will be discussed.     

Organometallic complexes as hole-transporting materials in organic light-emitting diodes

The use of metal complexes fac-tris(1-phenylpyrazolato-N,C(2)('))cobalt(III) [fac-Co(ppz)(3)], fac-tris(2-phenylpyridinato-N,C(2)(') cobalt(III) [fac-Co(ppy)(3)], and [tris[2-((pyrrole-2-ylmethylidene)amino)ethyl]amine]gallium(III) [Ga(pma)] as materials for hole-transporting layers (HTL) in organic light-emitting diodes (OLEDs) is reported. Co(ppz)(3) and Co(ppy)(3) were prepared by following literature procedures and isolated as mixtures of facial (fac) and meridional (mer) isomers. The more stable fac isomers were separated from the unstable mer forms via column chromatography and thermal gradient sublimation. Crystals of fac-Co(ppz)(3) are monoclinic, space group P2(1)/c, with a = 13.6121(12) A, b = 15.5600(12) A, c = 22.9603(17) A, beta = 100.5 degrees, V = 4781.3(7) A(3), and Z = 8. [Tris[2-((pyrrol-2-ylmethylidene)amino)ethyl]amine]gallium [Ga(pma)] was prepared by the reaction of gallium(III) nitrate with the pmaH(3) ligand precursor in methanol. Ga(pma) crystallizes in the cubic space group I3d with cell parameters a = 20.2377(4) A, b = 20.2377(4) A, c = 20.2377(4) A, beta = 90.0 degrees, V = 8288.6(3) A(3), and Z = 16. These cobalt and gallium complexes are pale colored to colorless solids, with optical energy gaps ranging 2.6-3.36 eV. A two-layer HTL/ETL (ETL = electron-transporting layer) device structure using fac-Co(ppz)(3) and fac-Co(ppy)(3) as the HTL does not give efficient electroluminescence. However, the introduction of a thin layer of a hole-transporting material (N,N'-bis(1-naphthyl)-N,N'-diphenylbenzidine, NPD) as an energy "stair-step" and electron/exciton-blocker dramatically improves the device performance. Both fac-Co(ppz)(3) and fac-Co(ppy)(3) devices give external quantum efficiencies higher than 1.0%, with brightness 5000 and 7000 Cd/m(2) at 10 V, respectively. Ga(pma) also functions as an efficient interface layer, giving device performances very similar to those of analogous devices using NPD as the interface layer. Stability tests have been carried out for Co(ppz)(3)/NPD/Alq(3) and Co(ppy)(3)/NPD/Alq(3) devices. While fac-Co(ppy)(3) gave stable OLEDs, the fac-Co(ppz)(3)-based devices had very short lifetimes. On the basis of the experimental results of chemical oxidation of fac-Co(ppz)(3), the major cause for the fast decay of the fac-Co(ppz)(3) device is proposed to be the decomposition of fac-Co(ppz)(3)(+) in the HTL layer during the device operation.