含有AlGaAs插入层的InAs/GaAs三色量子点红外探测器

本文报道了采用分子束外延技术制备的三色InAs/GaAs量子点红外探测器. 器件采用nin型结构, 吸收区结构是在InGaAs量子阱中生长含有AlGaAs插入层的InAs量子点, 器件在77 K下的红外光电流谱有三个峰值: 6.3, 10.2和11 μm. 文中分析了它们的跃迁机制, 并且分别进行了指认. 因为有源区采用了不对称结构, 所以器件在外加偏压正负方向不同时, 光电流谱峰值的强度存在一些差异. 不论在正偏压或者负偏压下, 当偏压达到较高值, 再进一步增大偏压时, 都出现了对应于连续态的跃迁峰强度明显下降的现象, 这是由量子点基态与阱外连续态的波函数交叠随着偏压进一步增大而迅速减小导致的.     

Application of the first collision source method to CSNS target station shielding calculation

Ray effects are an inherent problem of the discrete ordinates method. RAY3 D, a functional module of ARES, which is a discrete ordinates code system, employs a semi-analytic first collision source method to mitigate ray effects. This method decomposes the flux into uncollided and collided components, and then calculates them with an analytical method and discrete ordinates method respectively. In this article, RAY3 D is validated by the Kobayashi benchmarks and applied to the neutron beamline shielding problem of China Spallation Neutron Source(CSNS)target station. The numerical results of the Kobayashi benchmarks indicate that the solutions of DONTRAN3 D with RAY3 D agree well with the Monte Carlo solutions. The dose rate at the end of the neutron beamline is less than10.83 μSv/h in the CSNS target station neutron beamline shutter model. RAY3 D can effectively mitigate the ray effects and obtain relatively reasonable results.     

闪光X射线高速摄影荧光转换屏的设计和性质研究

本文描述了用于中间弹道高速摄影荧光转换屏的设计特点、性能测试和实验结果。文中讨论了Gd2O2S:Tb和(Zn,Cd)S对X射线的吸收系数、发光效率以及荧光光谱与变象管S-20阴极光谱灵敏度曲线相匹配的相关曲线;测试了转换屏的相对发光强度、分辨率及其余辉。实验证明本屏发光亮度比钨酸钙屏高60倍左右,屏分辩率达51p/mm,余辉时间为8μs,多幅摄影结果证明第一幅的图象对第二幅照片无“拖尾”现象,本屏已达到了中间弹道高速摄影转换屏的实用水平。     

短路过渡电弧焊电流信号的近似熵分析

依据近似熵的理论和算法，从非线性角度对纯CO₂保护气体条件下短路过渡电弧焊的电流信号进行了近似熵分析.通过对不同的送丝速度、给定电压及气体流量下电流信号的近似熵计算和比较，表明近似熵可以作为短路过渡稳定性的评判标准.近似熵越大，波动越小，焊接过程就越稳定. 关键词： 非线性 近似熵 短路过渡 稳定性     

光纤直接耦合微加工型可调光衰减器

设计研制了一种新型小体积, 低成本的光纤直接耦合微加工型可调光衰减器. 该器件采用电磁微线圈驱动柔性框架上的活动光纤微位移实现信号功率衰减变化, 驱动电压为0~8 V, 工作范围0~65 dB, 动态时间响应小于2.3 ms. 器件构造工艺主要使用了CNC高精度雕刻和激光点焊封装技术. 利用有限元单元法进行器件理论分析, 并报告了其测试性能.     

Design and application of a laser beam alignment system based on the imaging properties of a multi-pass amplifier

Image relaying is presented as a technique for aligning beams onto mm-sized target of high power laser. On the basis of summarizing the preceeding work on the near-field image relaying of multiple spatial filters,the far-filed image relaying is suggested firstly. The near-field and far-field image relaying properties of multiple spatial filters in laser beams automatic alignment system are analyzed. A geometrical optics approach and an ABCD ray matrix theory are used throughout. The reasonable and optimum scheme for automatically aligning multi-pass beam paths is presented and demonstrated on the multi-pass amplifier system of the SG-Ⅲ prototype.     

KBA显微镜成像系统的成像模拟及X光成像实验的研究

KBA显微镜是一种非轴对称、非共轴的掠入射成像系统。其结构复杂,调节精度要求很高,在实际成像实验操作中难以掌握其成像特性。利用光学设计软件模拟其成像,对系统的调节和成像分析提供有益的参考。利用光学设计软件ZEMAX模拟了KBA显微镜对点源的成像过程,给出了KBA显微镜成像系统的焦深约为1 mm,景深为50 mm左右。并且由模拟可知,掠入射角对成像的影响很大。对像素尺寸约10μm的探测设备,模拟得出KBA成像系统的空间分辨力上限为3μm左右。基于星光Ⅱ装置对周期为20μm的网格靶成像,获得了KBA显微镜较为清晰的X光图像。该项工作为进一步开展掠入射成像系统的研究奠定了基础。     

旋翼叶片回波建模与闪烁现象机理分析

对旋翼叶片回波建模与闪烁现象进行了综合研究.基于散射点散射系数和分布情况,构建了旋翼叶片回波的散射点模型,并分析了散射点分布对回波的影响;在此基础上研究了回波时域闪烁现象的物理散射机理,并结合时频分析和横向分辨率分析了微多普勒特征及时频域闪烁现象;对两类不同分布间隔的散射点模型进行了仿真,并与积分模型进行对比性实验,结果验证了闪烁现象物理分析的合理性.该研究成果在旋翼目标的探测识别领域具有一定的理论与应用价值.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.