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911.
Modeling and numerical simulations of the convective flows induced by the vibration of the monocrystal during crystal growth have been performed for two configurations simulating the Cz and FZ methods. This permitted to emphasize the role of different vibrational mechanisms in the formation of the average flows. It is shown that an appropriate combination of these mechanisms can be used to counteract the usual convective flows (buoyancy- and/or thermocapillary-driven) inherent to crystal growth processes from the liquid phase. While vibrational convection is rather complex due to these identified mechanisms, the new modeling used in the present paper opens up very promising perspectives to efficiently control heat and mass transfer during real industrial applications of crystal growth from the liquid phase.  相似文献   
912.
A Hamiltonian describing four bosons that move on a lattice and interact by means of pair zero-range attractive potentials is considered. A stronger version of the Hunziker–Van Vinter–Zhislin theorem on the essential spectrum is established. It is proved that the set of eigenvalues lying to the left of the essential spectrum is finite for any interaction energy of two bosons and is empty if this energy is sufficiently small.  相似文献   
913.
914.
The general solution to the spatial stress problem for an elastic layer is given in a new form. A layer compressed by normal forces uniformly distributed over a square is considered as an example.  相似文献   
915.
The crystal structures of two ancylite specimens from Khibiny massif (the Kola Peninsula, Russia)—ancylite-(Ce) from alkali hydrothermalites (Sr1.01Ca0.02Ba0.01)Σ1.04(Ce0.52La0.28Nd0.11Pr0.04 Sm0.01)Σ0.96(CO3)2(OH0.83F0.13)Σ0.96 · 0.9H2O and ancylite-(Ce) from carbonatites—have (Sr0.80Ca0.05Ba0.01)Σ0.86(Ce0.62La0.40Nd0.09Pr0.03) Σ1.14(CO3)2(OH0.99F0.15)Σ1.14 · 1.0H2O been refined by the Rietveld method. A focusing STOE-STADIP diffractometer with a bent Ge(111) primary monochromator was used (λ MoK α 1 radiation, 2.16° < 2θ < 54.98°; reflection number 237–437). All the computations for ancylite from alkali hydrothermalites were performed within the sp. gr. Pmc21, a = 5.0634(1) Å, b = 8.5898(1) Å, c = 7.2781(1) Å, V = 316.55(1) Å3, R wp = 1.90; the computations for ancylite from carbonatites were performed within the sp. gr. Pmcn, a = 5.0577(1) Å, b = 8.5665(2) Å, c = 7.3151(2) Å, V = 316.94(1) Å3, R wp = 2.38 in the anisotropic approximation of thermal vibrations of cations and oxygen atoms.  相似文献   
916.
Photomasks are the backbone of microfabrication industries. Currently they are fabricated by a lithographic process, which is very expensive and time consuming since it is a multi-step process. These issues can be addressed by fabricating photomasks by direct femtosecond laser writing, which is a single-step process and comparatively cheaper and faster than lithography. In this paper we discuss our investigations on the effect of two types of laser writing techniques, namely front- and rear-side laser writing, with regard to the feature size and the edge quality of a feature. It is proved conclusively that for the patterning of masks, front-side laser writing is a better technique than rear-side laser writing with regard to smaller feature size and better edge quality. Moreover the energy required for front-side laser writing is considerably lower than that for rear-side laser writing. Received: 22 May 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001  相似文献   
917.
The disintegration of bromhexin tablets was monitored by magnetic resonance imaging. The fast imaging method FLASH with spoiling gradients was used to obtain images of the tablets in short time intervals. The rate of the disintegration depends on the preparation method, kind and percentage of the carrier (polyethylene glycol, lactose). Solid dispersion with slow evaporation of solvent yields materials with decreased dissolution rate. Increasing molecular mass of polyethylene glycol and its percentage content also hampers disintegration.  相似文献   
918.
We demonstrate how first-principles calculations using density-functional theory (DFT) can be applied to gain insight into the molecular processes that rule the physics of materials processing. Specifically, we study the molecular beam epitaxy (MBE) of arsenic compound semiconductors. For homoepitaxy of GaAs on GaAs (001), a growth model is presented that builds on results of DFT calculations for molecular processes on the β2-reconstructed GaAs (001) surface, including adsorption, desorption, surface diffusion, and nucleation. Kinetic Monte Carlo simulations on the basis of the calculated energetics enable us to model MBE growth of GaAs from beams of Ga and As2 in atomistic detail. The simulations show that island nucleation is controlled by the reaction of As2 molecules with Ga adatoms on the surface. The analysis reveals that the scaling laws of standard nucleation theory for the island density as a function of growth temperature are not applicable to GaAs epitaxy. We also discuss heteroepitaxy of InAs on GaAs (001), and report first-principles DFT calculations for In diffusion on the strained GaAs substrate. In particular, we address the effect of heteroepitaxial strain on the growth kinetics of coherently strained InAs islands. The strain field around an island is found to cause a slowing down of material transport from the substrate towards the island, and thus helps to achieve more homogeneous island sizes. Received: 2 May 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002  相似文献   
919.
Nuclei in the neutron-rich Ni region have been studied by γ-ray spectroscopy. Gamma-rays emitted from isomers, with T 1/2 > 1 ns, produced in heavy-ion deep-inelastic collisions were measured with an isomer-scope. The nuclear structure of the doubly magic 68Ni and its neighbor 69,71Cu is discussed on the basis of the shell model. Future experiments for more neutron-rich Ni nuclei are also viewed. Received: 1 May 2001 / Accepted: 4 December 2001  相似文献   
920.
Understanding of the basic nature of arc root fluctuation is still one of the unsolved problems in thermal arc plasma physics. It has direct impact on myriads of thermal plasma applications being implemented at present. Recently, chaotic nature of arc root behavior has been reported through the analysis of voltages, acoustic and optical signals which are generated from a hollow copper electrode arc plasma torch. In this paper we present details of computations involved in the estimation process of various dynamic properties and show how they reflect chaotic behavior of arc root in the system.  相似文献   
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