Investigations of the defect structure of CdS single crystals and explanation of the exciton lines shift

In this paper an influence of the defect structure of CdS crystal on the exciton line shift has been investigated. It was proved that the exciton line shift towards higher energies is connected with variations of the lattice constant caused by zinc impurities. CdS crystals after Zn ions implantation do not reveal the exciton line shift and only broadening of these lines occurs due to the strain field existing in crystal lattice.     

The defect structure of CdS crystals heavy doped with Cu,Se. and Zn atoms

In this paper the defect structure of CdS crystals doped with Cu, Se and Zn atoms has been investigated. There were used two X-ray methods: the oscillating slit and oscillating film methods. CdS crystals were obtained from the melt under pressure of Se and Zn 0.5, 0.75, 1% wt and Cu 0.25, 0.5, 0.75, 1% wt in relation to CdS crystals. It was proved that high doping damages the structure of CdS crystals and that especially Cu impurity much more disturbs the crystal lattice than Zn one. Se atoms cause rather small deformation of crystal and increase the lattice constant, this being connected with decreasing of energy gap.