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231.
V. Edon M.C. Hugon B. Agius L. Miotti C. Radtke F. Tatsch J.J. Ganem I. Trimaille I.J.R. Baumvol 《Applied Physics A: Materials Science & Processing》2006,83(2):289-293
The influence of processing parameters on the electrical characteristics of RuO2/LaAlO3/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO3 on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and
gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford
backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in
better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result
is explained by oxygen ability to heal oxygen vacancies in the LaAlO3 film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO3 on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime.
PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc 相似文献
232.
We have employed a full-relativistic version of an all-electron full-potential linearized-augmented plane-wave method in the local density approximation to investigate the electronic structure of nanolaminate Zr2AlX (X=C and N). The Zr 4d electrons are treated as valence electrons. We have investigated the lattice parameters, bulk moduli, band structures, total and partial densities of states and charge densities. It is demonstrated that the strength and electrical transport properties in these materials are principally governed by the metallic planes. 相似文献
233.
Dual fractional cutting plane algorithms, in which cutting planes are used to iteratively tighten a linear relaxation of an integer program,
are well-known and form the basis of the highly successful branch-and-cut method. It is rather less well-known that various primal cutting plane algorithms were developed in the 1960s, for example by Young. In a primal algorithm, the main role of the cutting
planes is to enable a feasible solution to the original problem to be improved. Research on these algorithms has been almost
non-existent.
In this paper we argue for a re-examination of these primal methods. We describe a new primal algorithm for pure 0-1 problems based on strong valid inequalities and give some encouraging computational results. Possible extensions to the case of general
mixed-integer programs are also discussed. 相似文献
234.
Mathematical economics has a long history and covers many interdisciplinary areas between mathematics and economics. At its center lies the theory of market equilibrium. The purpose of this expository article is to introduce mathematicians to price decentralization in general equilibrium theory. In particular, it concentrates on the role of positivity in the theory of convex economic analysis and the role of normal cones in the theory of non-convex economies. 相似文献
235.
可变抽样区间的非参数控制图 总被引:1,自引:1,他引:0
最近几年一些学者研究了可变抽样区间的质量控制图。Amin等提出了可变抽样区间(VSI)的非参数控制图———符号 (Sign)统计量图〔1〕。本文在此基础上研究位置VSI符号控制图的制定方法 ,并设计离散VSI符号控制图。符号控制图的优点是对非正态总体亦可应用 ,并且不需要过程方差的信息。本文将所设计的VSI符号控制图同固定抽样区间 (FSI)的常规图作比较 ,并举实例说明符号控制图的应用 相似文献
236.
Annegret K. Wagler 《Mathematical Methods of Operations Research》2002,56(1):127-149
An edge e of a perfect graph G is critical if G−e is imperfect. We would like to decide whether G−e is still “almost perfect” or already “very imperfect”. Via relaxations of the stable set polytope of a graph, we define two
superclasses of perfect graphs: rank-perfect and weakly rank-perfect graphs. Membership in those two classes indicates how
far an imperfect graph is away from being perfect. We study the cases, when a critical edge is removed from the line graph
of a bipartite graph or from the complement of such a graph. 相似文献
237.
Possible Loss and Recovery of Gibbsianness¶During the Stochastic Evolution of Gibbs Measures 总被引:1,自引:1,他引:0
A.C.D. van Enter R. Fernández F. den Hollander F. Redig 《Communications in Mathematical Physics》2002,226(1):101-130
We consider Ising-spin systems starting from an initial Gibbs measure ν and evolving under a spin-flip dynamics towards a
reversible Gibbs measure μ≠ν. Both ν and μ are assumed to have a translation-invariant finite-range interaction. We study
the Gibbsian character of the measure νS(t) at time t and show the following:
(1) For all ν and μ, νS(t) is Gibbs for small t.
(2) If both ν and μ have a high or infinite temperature, then νS(t) is Gibbs for all t > 0.
(3) If ν has a low non-zero temperature and a zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t and non-Gibbs for large t.
(4) If ν has a low non-zero temperature and a non-zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t, non-Gibbs for intermediate t, and Gibbs for large t.
The regime where μ has a low or zero temperature and t is not small remains open. This regime presumably allows for many different scenarios.
Received: 26 April 2001 / Accepted: 10 October 2001 相似文献
238.
A Dirac picture perturbation theory is developed for the time evolution operator in classical dynamics in the spirit of the Schwinger–Feynman–Dyson perturbation expansion and detailed rules are derived for computations. Complexification formalisms are given for the time evolution operator suitable for phase space analyses, and then extended to a two-dimensional setting for a study of the geometrical Berry phase as an example. Finally a direct integration of Hamilton's equations is shown to lead naturally to a path integral expression, as a resolution of the identity, as applied to arbitrary functions of generalized coordinates and momenta. 相似文献
239.
A simple simulation scheme that simultaneously describes the growth kinetics of SiO2 films at the nanometer scale and the SiOx/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law. 相似文献
240.
F. S. de Aguiar L. B. Bernardes S. Goulart Rosa Jr. 《Journal of statistical physics》1991,64(3-4):673-682
Metastability in the ferromagneticp-state Potts model defined on the Cayley tree is discussed. It is shown that the sign of the boundary fieldH
s
determines the order of the transition as well as the stability of the low-temperature phase. Lowering the temperature withH
s
>0, a system withp<2 (p>2) will display a second (first)-order transition to a metastable (stable) phase. ForH
s
>0 a second (first)-order transition to a metastable (stable) phase occurs ifp>2 (p<2). In this case the system also has a residual entropy which is negative forp<2. 相似文献