Doped thin metal oxide films for catalytic gas sensors

TiO₂ and Pt doped TiO₂ thin films were grown by pulsed laser deposition on 〈0 0 1〉 SiO₂ substrates. The doped films were compared with undoped ones deposited in similar experimental conditions. An UV KrF* (λ = 248 nm, τ_FWHM ≅ 20 ns, ν = 2 Hz) excimer laser was used for the irradiation of the TiO₂ or Pt doped TiO₂ targets. The substrate temperatures were fixed during the growth of the thin films at values within the 300-500 °C range. The films’ surface morphology was investigated by atomic force microscopy and their crystalline quality by X-ray diffractometry. The corresponding transmission spectra were recorded with the aid of a double beam spectrophotometer in the spectral range of 400-1100 nm. No contaminants or Pt segregation were detected in the synthesized anatase phase TiO₂ thin films composition. Titania crystallites growth inhibition was observed with the increase of the dopant concentration. The average optical transmittance in the visible-infrared spectral range of the films is higher than 85%, which makes them suitable for sensor applications.     

Experimental plant for simultaneous production of 14N and 15N by 15N/14N exchange in NO,NO2–HNO3 system under pressure

An experimental study on ¹⁴N and ¹⁵N simultaneous separation using the chemical exchange in NO, NO₂–HNO₃ system under pressure is presented. The influence of the pressure and of the interstage 10 M HNO₃ flow rate on the separation of ¹⁴N and ¹⁵N was measured on a packed column with product and waste refluxers. At steady state and 1.8 atm (absolute), the isotopic concentration at the bottom of the separation column was 0.563 at% ¹⁵N, and in the top of the column was 0.159 at% ¹⁵N. The height equivalent to a theoretical plate and interstage 10 M HNO₃ flow rate values, obtained in these experimental conditions, allows the separation of ¹⁴N highly depleted of ¹⁵N and of ¹⁵N at 99 at% ¹⁵N concentration.     

Correlation between ablation efficiency and nanoparticle generation during the short-pulse laser ablation of metals

The mechanisms of material ablation and nanoparticle generation from metal samples exposed to intense short laser pulses are experimentally investigated. We performed measurements of the ablated volume using optical microscopy and the analysis of the ablation plume by fast imaging. The results confirm the existence of two distinguished ablation regimes as a function of the laser fluence, and give a deeper insight in the involved physical mechanisms. Thus, both regimes are found to be related to the relative amount of atoms and nanoparticles within the plume. Comparing the results obtained for copper and gold, it is possible to determine the influence of electron-lattice coupling on the sample heat regime and the resulting plume properties.     

Thermal decomposition of ammonium uranium fluoride

Thermal decomposition of uranium double fluoride in a screw reactor in the temperature range of 250–500 °C is presented. Using integral reactor relation, kinetic parameters are discussed in terms of the shrinking core grain model. Arrhenius global activation energy is also determined.     

The kinetics of the15N/14N isotopic exchange between nitric oxide and nitric acid

The rate of the¹⁵N/¹⁴N isotopic exchange between NO−HNO₃ at high nitric acid concentration (2–10M) have been measured. The experimental data were obtained by contacting nitric oxide at atmospheric pressure with nitric acid solution labelled with¹⁵N, in a glass contactor.     

Dynamic modelling and simulation of ¹⁵N separation by chemical exchange in NO, NO₂-HNO₃ system

The dynamic behaviour of a 1?N separation process by chemical exchange in a NO, NO?-HNO? system has been analysed based on an accurate mathematical model. A nonlinear system of first-order partial differential equations was determined by considering the multiple exchange reactions between the components of the gaseous mixture and the liquid phase constituents. The mathematical model of the process describes the space-time variation of the 1?N mole fraction in gas and liquid phases and provides a better understanding of operating limits and decision support in process design and optimisation.     

Characterization of pulsed laser deposited chalcogenide thin layers

In this work we report on pulsed laser deposition (PLD) of chalcogenide thin films from the systems (AsSe)_100−xAgI_x and (AsSe)_100−xAg_x for sensing applications. A KrF* excimer laser (λ = 248 nm; τ_FWHM = 25 ns) was used to ablate the targets that had been prepared from the synthesised chalcogenide materials. The films were deposited in either vacuum (4 × 10⁻⁴ Pa) or argon (5 Pa) on silicon and glass substrates kept at room temperature. The basic properties of the films, including their morphology, topography, structure, and composition were characterised by complementary techniques. Investigations by X-ray diffraction (XRD) confirmed the amorphous nature of the films, as no strong diffraction reflections were found. The film composition was studied by energy dispersive X-ray (EDX) spectroscopy. The morphology of the films investigated by scanning electron microscopy (SEM), revealed a particulate-covered homogeneous surface, typical of PLD. Topographical analyses by atomic force microscopy (AFM) showed that the particulate size was slightly larger in Ar than in vacuum. The uniform surface areas were rather smooth, with root mean square (rms) roughness increasing up to several nanometers with the AgI or Ag doping. Based upon the results from the comprehensive investigation of the basic properties of the chalcogenide films prepared by PLD and their dependence on the process parameters, samples with appropriate sorption properties can be selected for possible applications in cantilever gas sensors.     

Optical properties of aluminium nitride films obtained by pulsed laser deposition: an ellipsometric study

Aluminium nitride (AlN) films obtained by pulsed laser deposition (PLD) at different low ambient nitrogen pressure have been optically investigated by spectral ellipsometry within the 300–800 nm wavelength range, Sellmeier and Wemple–DiDomenico approximation approaches have been applied for the ellipsometric data analysis. Optical parameters such as refractive index and single oscillator energies of deposited films were estimated and their dependence on the N₂ pressure was studied. The obtained refractive index values of AlN films are around 2 in a wide wavelength region above 400 nm and suggest the growth of a polycrystalline structure. The relatively low (<3.4 eV) threshold energies indicate the formation of a defective and disordered structure, formed during the deposition process. PACS 78.20.-e; 78.20.Ci; 78.66.Fd     

Quantitative analysis of amorphous indium zinc oxide thin films synthesized by Combinatorial Pulsed Laser Deposition

The use of amorphous and transparent oxides is a key for the development of new thin film transistors and displays. Recently, indium zinc oxide (IZO) was shown to exhibit high transparency in the visible range, low resistivity, and high mobility. Since the properties and the cost of these films depend on the In/(In + Zn) values, the measurement of this ratio is paramount for future developments and applications. We report on accurate analysis of the elemental composition of IZO thin films synthesized using a Combinatorial Pulsed Laser Deposition technique. The monitoring of the thin films elemental composition by Laser-Induced Breakdown Spectroscopy was chosen in view of further in situ and real-time technological developments and process control during IZO fabrication. Our analytical approach is based on plasma modeling, the recorded spectra being then compared to the spectral radiance computed for plasmas in local thermal equilibrium. The cation fractions measured were compared to values obtained by complementary measurements using energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. Spectroscopic ellipsometry assisted the scientific discussion. A good agreement between methods was found, independently of the relative fraction of indium and zinc that varied from about 65 to 90 and 35 to 10 at%, respectively, and the measurement uncertainties associated to each analytical method.