Piezoelectric Relaxation of Two-Dimensional Electron Gas in Heterostructures with InGaN/GaN Quantum Wells

Russian Physics Journal - The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in InGaN/AlGaN/GaN heterostructures with one filled size quantization...     

Computerized setup for double-monochromator photoreflectance spectroscopy

An experimental setup for studying semiconductor structures by photoreflectance spectroscopy is designed. The double-monochromator-based optical scheme of the setup makes it possible to depress uncontrolled heating of the sample and diminishes a bending of the energy bands due to charge carrier photogeneration. Accordingly, the photoreflectance spectra are detected with a minimal influence of the modulating and probe radiations on the sample. With this setup, the room-temperature photoreflectance spectra from GaAs/GaAsP superlattices are taken and the interband transition energies, as well as a potential step in the conduction band of these superlattices, are measured.     

Raman scattering in a near-surface n-GaAs layer implanted with boron ions

Structure in the Raman scattering spectra of near-surface n-GaAs layers (n=2×10¹⁸ cm⁻³) implanted with 100 keV B⁺ ions in the dose range 3.1×10¹¹–1.2×10¹⁴ cm⁻² is investigated. The qualitative and quantitative data on the carrier density and mobility and on the degree of amorphization of the crystal lattice and the parameters of the nanocrystalline phase as a result of ion implantation are obtained using a method proposed for analyzing room-temperature Raman spectra. Fiz. Tverd. Tela (St. Petersburg) 41, 1495–1498 (August 1999)