Low-macroscopic field emission from nanocrystalline Al doped SnO<Subscript>2</Subscript> thin films synthesized by sol–gel technique

We have observed low-macroscopic field electron emission from wide bandgap nanocrystalline Al doped SnO₂ thin films deposited on glass substrates. The emission properties have been studied for different anode-sample spacings and for different Al concentrations in the films. The turn-on field and approximate work function were calculated and we have tried to explain the emission mechanism from this. The turn-on field was found to vary in the range 5.6–7.5 V/μm for a variation of anode sample spacing from 80–120 μm. The turn-on field was also found to vary from 4.6–5.68 V/μm for a fixed anode-sample separation of 80 μm with a variation of Al concentration in the films 8.16–2.31%. The Al concentrations in the films have been measured by energy dispersive X-ray analysis. Optical transmittance measurement of the films showed a high transparency with a direct bandgap ∼3.98 eV. Due to the wide bandgap, the electron affinity of the film decreased. This, along with the nanocrystalline nature of the films, enhanced the field emission properties. PACS 81.20.Fw; 61.10.-i; 79.70.+q     

Measurement of Einstein-Podolsky-Rosen-type flavor entanglement in Upsilon(4S) --> B0 B0 decays

The neutral B meson pair produced at the Upsilon(4S) should exhibit a nonlocal correlation of the type discussed by Einstein, Podolsky, and Rosen. We measure this correlation using the time-dependent flavor asymmetry of semileptonic B(0) decays, which we compare with predictions from quantum mechanics and two local realistic models. The data are consistent with quantum mechanics, and inconsistent with the other models. Assuming that some B pairs disentangle to produce B(0) and B(0) with definite flavor, we find a decoherent fraction of 0.029 +/ -0.057, consistent with no decoherence.     

Investigation of energetic ion-induced mixing in Bi/Ge system

The present study is carried out for the investigation of energetic ion beam mixing in the Bi/Ge system, induced by electronic excitation. The system Ge/Bi/C was deposited on Si substrate at room temperature in the high vacuum deposition system and irradiated using Au ions of 120?MeV at the fluences 1?×?10¹³, 5?×?10¹³ and 1?×?10¹⁴?ions/cm². The top layer of carbon was deposited as the protecting layer to avoid oxidation. The swift heavy ions (SHI)-induced interface mixing was studied by Rutherford backscattering spectroscopy (RBS) for depth profiles and compositions, grazing incidence X-ray diffraction (GIXRD) for phase identification and atomic force microscopy (AFM) for surface roughness. We have calculated the mixing rate, mixing efficiency and inter-diffusion coefficient for the Bi/Ge system. We observed that the thickness of the mixed region increased with increasing fluence. In the GIXRD pattern, no new crystalline phase formation was observed after irradiation, the mixed region may be in an amorphous form. The mixing effect is explained in the framework of the thermal spike model.     

Dependence of the Increase in the Pulse Duration on the Change of the Angle of Optical Radiation Input Into the Optical Fiber at Different Temperatures

Russian Physics Journal - Results of experimental studies of the influence of the optical fiber (OF) temperatures on the pulse duration are presented. Optical radiation was input at different...     

Multiswitching compound–compound synchronisation of six chaotic systems

In this paper, multiswitching combination synchronisation (MSCS) scheme has been investigated in a class of three non-identical fractional-order chaotic systems. The fractional-order Lorenz and Chen systems are taken as the drive systems. The combination of multidrive systems is then synchronised with the fractional-order Lü chaotic system. In MSCS, the state variables of the two drive systems synchronise with different state variables of the response system, simultaneously. Based on the stability of fractional-order chaotic systems, the MSCS of three fractional-order non-identical systems has been investigated. For the synchronisation of three non-identical fractional-order chaotic systems, suitable controllers have been designed. Theoretical analysis and numerical results are presented to demonstrate the validity and feasibility of the applied method.     

Nitrogen dissociation and its excitation/vibrational temperature with hydrogen admixture in 50 Hz DC discharge

Trace rare gas optical emission spectroscopy (TRG-OES) is carried out to determine the excitation temperature, vibrational temperature, dissociation fraction and nitrogen (N) atom density in 50?Hz active screen cage nitrogen plasma, as a function of discharge parameters (current density and fill pressure) and hydrogen concentrations. The excitation temperature is determined from Ar–I emission lines and is found to increase with hydrogen mixing. In a similar fashion, the vibrational temperature of second positive system is determined and found to have increasing trend with hydrogen addition. The dissociation fraction increases with hydrogen concentration up to 40% H₂ in the nitrogen plasma, so as the nitrogen atom density.     

MITATT mode in DDR heterostructure Impatt

Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p⁺-p₂-p₁-n₁-n₂-n⁺ where impact ionisation and tunneling takes place in the p₁-n₁ region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.     

Heavy ion interactions of (14.0 MeV/u) Pb with U

The interactions of ²⁰⁸Pb projectiles with ^natU target have been studied at 14.0 MeV/u beam energy using two different threshold detectors; mica and lexan. The elastic scattering data have been separated from the binary events and used for the determination of quarter-point angle θ_1/4 (≡ grazing angle θ_gr). The values of maximum angular momentum , radius of interaction R_int and reaction cross-section σ_R^exp(el.) were then deduced by making use of the value of θ_1/4. The data of inelastic events of different multiplicities have been used to determine partial reaction cross-sections. The sum of the partial cross-sections, therefore, yielded another independent value of reaction cross-section σ_R^exp(inel.) that in turn was used to derive the alternative values of , θ_gr, and R_int independently. The average of these quantities provided the experimental values of the reaction parameters that are comparable to the theoretical predictions.