Job evaluation in fuzzy environment

Job evaluation helps in developing and maintaining a pay structure based on values of the jobs. The job evaluation problem may be treated as managerial decision-making problem with multiple objectives. The present paper deals with the evaluation of a job in fuzzy environment. Fuzzy mathematical model has been developed for the job evaluation and solved with a suitable technique. A sample case study has been considered and the relative worth of various levels of job factors have been calculated numerically along with the scores of the benchmark jobs. An effort has been made to optimize the decision by maximizing the min operator.     

Neutron scattering study of combustion-synthesized Ce<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>

Powder neutron diffraction and Hi-Q neutron diffraction data have been recorded and analysed in order to obtain the local and long range order of Cu in Cudoped CeO₂ with three doping levels of Cu. Rietveld method and MCGR techniques of data analysis for the two types of data reveal that the Cu ion is in the 2+ oxidation state and has a vacancy in its first coordination shell. These deductions from the data analysis fit well with the mechanism of catalysis we propose.     

On PbS nanoparticles formed in the compartments of water/AOT/n-heptane microemulsion

Colloidal nanodispersion of lead sulfide has been prepared in the aqueous compartments of water/AOT/n-heptane. Compartmentalization has prevented growth and coagulation of particles in the dispersion. The uv–vis and fluorescence spectral measurements of the colloidal PbS dispersion were taken. Particle size has been determined by laser light scattering, transmission electron microscopy and absorption spectroscopy. The effects of temperature, ω (water/AOT mole ratio), [AOT], and [PbS] on the particle size have been examined. The nanodispersed particles in microemulsion capped with thiophenol and dodecanethiol were isolated and characterized by the TEM and FTIR methods.     

String Cosmology with Brans–Dicke Theory in Higher Dimensional Space-Time

We develop string cosmology in the presence ofa Brans–Dicke (BD) scalar field coupled toEinstein gravity for higher dimensional space-time.Solutions are obtained for the equation of state for thep-string, and physical situations arediscussed.     

Equivalence of the Generalized Vertical Block Linear Complementarity Problems and Linear Complementarity Problems

In this paper, generalization of a vertical block linear complementarity problem associated with two different types of matrices, one of which is a square matrix and the other is a vertical block matrix, is proposed. The necessary and sufficient conditions for the existence of the solution of the generalized vertical block linear complementarity problem is derived and the relationship between the solution set of the generalized vertical block linear complementarity problem and the linear complementarity problem is established. It is proved that the generalized vertical block linear complementarity problem has the P-property if and only if the vertical block linear complementarity problem has the P-property.     

Two-dimensional electrical characterization of ultrashallow source/drain extensions for nanoscale MOSFETs

State-of-the-art semiconductor devices require accurate control of the full two-dimensional dopant distribution. In this work, we report results obtained on 2D electrical characterization of ultra shallow junctions in Si using off axis electron holography to study two-dimensional effects on diffusion. In particular, the effect of a nitride diffusion mask on lateral diffusion of phosphorous is discussed. Retardation of lateral diffusion of P under the nitride diffusion mask is observed and compared to the lateral diffusion of P under an oxide diffusion mask. The ultra shallow junctions for the study were fabricated by a rapid thermal diffusion process from heavily P doped spin-on-dopants into a heavily B doped Si substrate. These shallow junctions are needed for fabricating source/drain extensions in nanoscale MOSFETs. One-dimensional electrical characterization of the junction was carried out to determine the electrical junction depth and compared to the metallurgical junction depth from SIMS analysis.