Solution of singular integral equations with logarithmic and Cauchy kernels

A direct method of solution is presented for singular integral equations of the first kind, involving the combination of a logarithmic and a Cauchy type singularity. Two typical cases are considered, in one of which the range of integration is a single finite interval and, in the other, the range of integration is a union of disjoint finite intervals. More such general equations associated with a finite number (greater than two) of finite, disjoint, intervals can also be handled by the technique employed here.     

On entropy,mixing andH-theorem

The paper deals with the study of Gibbs entropy and the properties of mixing character and mixing of phases in the course grained interpretation of irreversible approach to statistical equilibrium of an isolated system.     

On statistics and thermodynamics III

The paper deals with the estimation of probability distribution in a macroscopic theory of statistical thermodynamics based on the thermodynamic theory of measurement.     

Design of medium energy beam transport line between the RFQ and the Linac in the radioactive ion beam facility at VECC,Kolkata

The design of a medium energy beam transport (MEBT) line comprising of a re-buncher and four quadrupoles, two upstream and the other two downstream of the re-buncher, has been presented. The design was done to ensure almost 100% transport of heavy-ion beams of about 99 keV/u energy from RFQ having a q/A not less than 1/14 through the re-buncher and then through IH Linac of about 0.6 m length in which beam would be accelerated to about 185 keV/u. The re-buncher has been designed to operate at 37.8 MHz, the resonating frequency of both the RFQ and the IH Linac. The entire beam line has been installed and recently O⁵⁺ beam from RFQ has been transported through the re-buncher and subsequently accelerated in the IH Linac successfully.     

Effect of progressive annealing on Silicon Nanostructures grown by Hot Wire Chemical Vapor Deposition

In this work, the evolution of Silicon Nanostructures with progressive annealing has been studied. Hot Wire CVD (HWCVD) process was used to deposit a Si_xN_y/a-Si structure on an n-type 〈100〉$〈100〉$ Silicon substrate with the Nitride acting as the buffer layer. The depositions were carried out at a low substrate temperature (250 °C) which is precisely why HWCVD was chosen over other processes for this work. The as-deposited sample was then annealed at 800 °C and 900 °C respectively. AFM studies revealed promising results hinting at the presence of Silicon Nanostructures. With progressive annealing the Nanostructures began to evolve, eventually turning into sharp Nanopillars upon annealing at 900 °C. In this paper, a growth model has been proposed which attempts to validate the experimental results. Though a lot of work is currently underway in this field, study of Silicon Nanostructures grown by HWCVD technique is relatively new.