Rietveld refinement, microstructure, conductivity and impedance properties of Ba[Zr0.25Ti0.75]O3 ceramic

In this work, we report the Rietveld refinement, microstructure, conductivity and impedance properties of Ba[Zr_0.25Ti_0.75]O₃ ceramic synthesized by solid state reaction. This ceramic was characterized by X-ray diffraction, Rietveld refinement, scanning electron microscopy and energy dispersive X-ray spectrometry. Impedance spectroscopy analyses reveals a non-Debye relaxation phenomenon being its relaxation frequency moving toward to positive side with increase of temperature. A significant shift in impedance loss peaks toward higher frequency side indicates conduction in material and favoring the long range motion of mobile charge carriers. The frequency dependent ac conductivity at different temperatures indicates that the conduction process is thermally activated. The variation of dc conductivity exhibited a negative temperature coefficient of resistance behavior. The ac conductivity data are used to evaluate the density of states at Fermi level and activation energy of this ceramic. The dc electrical and thermal conductivities of grain and grain boundary have been discussed.     

Engineering of hydrophilic and plasmonic properties of Ag thin film by atom beam irradiation

Hydrophilic Ag nanostructures were synthesized by physical vapour deposition of 5 nm Ag thin films followed by irradiation with 1.5 keV Ar atoms. Optical absorbance measurements show a characteristic surface plasmon resonance absorption band in visible region. A blue-shift in absorbance from 532 to 450 nm is observed with increasing fluence from 1 × 10¹⁶ to 3 × 10¹⁶ atoms/cm². Atomic force microscopy was performed for the pristine and irradiated samples to study the surface morphology. The atom beam irradiation induced sputtering and surface diffusion lead to the formation of plasmonic surface. Rutherford backscattering spectroscopy of the pristine and irradiated film indicates that metal content in the film decreases with ion fluence, which is attributed to the sputtering of Ag by Ar atoms. The contact angle measurement demonstrates the possibility of engineering the hydrophilicity by atom beam irradiation.     

On some new m-spotty Lee weight enumerators

One of the objectives of coding theory is to ensure reliability of the computer memory systems that use high-density RAM chips with wide I/O data (e.g. 16, 32, 64 bits). Since these chips are highly vulnerable to m-spotty byte errors, this goal can be achieved using m-spotty byte error-control codes. This paper introduces the m-spotty Lee weight enumerator, the split m-spotty Lee weight enumerator and the joint m-spotty Lee weight enumerator for byte error-control codes over the ring of integers modulo ? (? ≥  2 is an integer) and over arbitrary finite fields, and also discusses some of their applications. In addition, MacWilliams type identities are also derived for these enumerators.     

Probing the effect of nitrogen gas on electrical conduction phenomena of ZnO and Cu-doped ZnO thin films prepared by spray pyrolysis

Zinc oxide (ZnO) and Cu-doped ZnO (CZO) thin films were prepared on borosilicate glass substrates by spray pyrolysis technique. The X-ray diffraction study revealed that Cu doping caused a reduction in crystallite size. AFM study showed an increase in roughness with doping. This is attributed to the aggregation of particles to form clusters. From transmission electron microscopy analysis, the particle size is measured to be in the range 30–65 nm (average particle size 48 nm) for undoped ZnO, whereas it is in the range 24–56 nm (average particle size 40 nm) for CZO film. The electrical resistivity of the thin films was investigated in the presence of air as well as N₂ mixed air at different temperatures in the range 30–270 °C. The change in resistivity properties was explained on the basis of conduction phenomena within the grain along with the grain boundaries as well as Cu- and N₂-induced defect states. The thermal activation energy of ZnO was found to be in the range 0.04–0.7 eV and dependent on Cu doping and N₂ level in air.     

Structural and electrical studies of Ba5RTi3V7O30 (R=Ho,Gd, La) compounds

The ferroelectric ceramics Ba₅RTi₃V₇O₃₀ (R=Ho, Gd, La) have been synthesized by solid-state reaction technique. Preliminary X-ray structural analysis confirmed a single-phase formation of the compound in orthorhombic structure. Surface morphology of the compounds was studied by scanning electron microscopy (SEM). Detailed studies of electrical properties (i.e., dielectric constant, loss tangent, ac conductivity) as a function of temperature (RT-773 K) and at four different frequencies (1 kHz, 10 kHz, 100 kHz and 1 MHz) show ferroelectric–paraelectric phase transition of the compounds of diffuse-type. The activation energy has been evaluated from ac conductivity following Arrhenius equation. The conductivity pattern shows that it is strongly frequency dependent and obeys Jonscher's power relation.     

HPTLC Method for Analysis of Piperine in Fruits of Piper Species

JPC – Journal of Planar Chromatography – Modern TLC - Piperine, an alkaloid with diverse biological activity commonly occurring in fruits of Piper sp., has high commercial, economical,...     

Analysis of phase-jitter evolution in a reattaching shear layer

A modification to the phase-jitter calculation procedure of Ho et al. (J Fluid Mech 230:319–337, 1991), called the HZFB method (Ho, Zohar, Foss, and Buell), and an extension of the pattern recognition technique for phase-jitter calculation are presented in this work. Results for the phase jitter calculated using the three methods are compared for a separated shear layer past a surface-mounted rib. The original HZFB method is shown to yield inaccurate results in the presence of small-scale turbulence, while the modified HZFB method and the pattern recognition technique provide the correct estimates of phase jitter.     

Characterization of different substrates for Raman spectroscopic imaging of eukaryotic cells

For Raman spectroscopic analyses of the cells and other biological samples, the choice of the right substrate material is very important to avoid loss of information in characteristic spectral features because of competing background signals. In the current study, Raman spectroscopy is used to characterize several potential Raman substrates. Raman vibrational bands of the substrate material are discussed. The surface topography is analyzed by atomic force microscopy, and the root mean square surface roughness values are reported. Biocompatibility of the substrates is tested with Hep G2 cells evaluating cellular morphology as well as live/dead staining. Calcium fluoride, silicon, fused silica, borofloat glass, and silicon nitride membranes support cell growth and adherence. Silicon, borofloat glass, and fused silica give rise to Raman signals in the region of interest. Calcium fluoride substrate (UV grade) is suitable for Raman spectroscopic investigation of living cells. Nickel foil is suitable substrate for Raman spectroscopic investigation but cellular adherence and viability depend on the quality of the foil. Silicon nitride membranes coated with nickel chrome is a suitable Raman substrate in closed microfluidic systems. Copyright © 2016 John Wiley & Sons, Ltd.