Blocking probability analysis of pruned optical banyan networks on vertical stacking scheme with extra banyan planes

Vertically stacked pruned optical banyan networks with extra planes (in short, EP-VSOB networks) have lower switch count and optimal time complexity (O(log₂ N)) for routing N input requests. However, blocking probability is relatively higher than that of a VSOB networks using regular banyan planes. In the EP-VSOB architecture, the number of pruned planes has always been considered as , and a few extra planes (regular banyan) have been added with these pruned planes. In this paper we present the results of blocking analysis of a more generalized architecture in which the number of pruned planes can be 2^x, where x ? 0 in addition to the variable extra planes. This generalization helps us make a compromise between different constraints and performance metrics. Our simulation results show that for some given performance requirements (e.g. cost, speed or blocking probability) we can choose a network that has lower switch count compared to -plane pruned crosstalk-free optical banyan networks. For example, to ensure blocking probability <0.02, previously we would chose a pruned network of 32 pruned planes and 1 extra planes (a regular banyan); however, our simulations results show that a network of 16 pruned planes and 2 extra planes is enough to ensure the same performance. It is notable that, the hardware cost decreases by 28.65% in this new combination of pruned and extra planes. We believe our results will provide more flexibility in choosing a particular EP-VSOB network satisfying given requirements.     

Cu chemistry of YBa2Cu3O6+x investigated by nuclear quadrupole resonance

The nuclear quadrupole resonance (NQR) technique has been utilized to characterize the local oxygen coordination of inequivalent Cu sites in YBa₂Cu₃O_6+x(0 ≤ x ≤ 0.91). Essentially, four distinct NQR lines which correspond to 2, 3,4 oxygen coordinated Cu sites in the Cu-O chains and 5 oxygen coordinated Cu sites in the Cu-O planes have been observed. The zero-field NQR frequencies of these are centered at about 30.1, 24.0, 22.0 and 31.5 MHz for ⁶³Cu, respectively. For the antiferromagnetic ordered state (x ≤ 0.3), antiferromagnetic nuclear resonance (AFNR) has been observed at 90 MHz with quadrupole splittings associated with the moment-bearing Cu sites in the Cu-O planes. The relative intensities of these resonance lines depend on the oxygen content, and this gives us a microscopic understanding of the Cu chemistry of this system.     

Correction of B0 susceptibility induced distortion in diffusion-weighted images using large-deformation diffeomorphic metric mapping

Geometric distortion caused by B0 inhomogeneity is one of the most important problems for diffusion-weighted images (DWI) using single-shot, echo planar imaging (SS-EPI). In this study, large-deformation, diffeomorphic metric mapping (LDDMM) algorithm has been tested for the correction of geometric distortion in diffusion tensor images (DTI). Based on data from nine normal subjects, the amount of distortion caused by B0 susceptibility in the 3-T magnet was characterized. The distortion quality was validated by manually placing landmarks in the target and DTI images before and after distortion correction. The distortion was found to be up to 15 mm in the population-averaged map and could be more than 20 mm in individual images. Both qualitative demonstration and quantitative statistical results suggest that the highly elastic geometric distortion caused by spatial inhomogeneity of the B0 field in DTI using SS-EPI can be effectively corrected by LDDMM. This postprocessing method is especially useful for correcting existent DTI data without phase maps.     

Conducting-AFM spectroscopy on ultrathin SiO2 films

We study the dielectric degradation phenomena of ultrathin SiO₂ films using conducting-AFM spectroscopy in a vacuum (1᎒^-5 Pa). In successive current-voltage characteristics, a change of the carrier transport (from Fowler-Nordheim tunneling to direct tunneling) and current instability (which is due to a change in conductance of leakage path by isolated traps) are observed before 'breakdown'. As an example of a possible application of conducting-AFM spectroscopy, we investigate a change in conductivity at a 'breakdown' area.     

III–V based-semiconductor photonic crystals

Three-dimensional (3D) and two-dimensional (2D) photonic crystals based on III–V semiconductors are described. On the 3D photonic crystals, the development of complete photonic crystals at optical wavelengths and their applications to ultrasmall optical integrated circuits including 3D sharp bend waveguide are described. On the 2D photonic crystals, two-unique device and/or phenomena are demonstrated.     

A nanoscale understanding of the adhesion of polybutylene terephthalate on aluminum

The adhesion strength of polybutylene terephthalate (PBT) on aluminum was investigated using density functional theory-based total energy calculations. Aluminum atom was connected to a PBT monomer at different orientations and total energies were calculated in order to determine the most stable orientation. The energy differences showed that the Al oriented at 180° with the ester group of the monomer bonded strongly. Using this orientation, the PBT monomer-adhesion on aluminum surface and the aluminum atom adhesion on PBT bulk were also investigated.     

Persistent hole-burning of perylene microcrystallites dispersed in PVA

A persistent hole-burning is observed in β-perylene microcrystallites, which were embedded in poly-vinyl alcohol. By laser light excitation at 22,535 cm⁻¹ and at 10 K, the hole is found at the excitation photon energy. The mechanism of the persistent hole-burning is interpreted in terms of the resolution of microcrystallites into smaller microcrystallites. This is a novel observation of the persistent hole-burning in aromatic microcrystallites. When the specimen, which includes a hole, is annealed at high temperatures, the resolved microcrystallites restore back to the old position as had been. The β-perylene microcrystallite specimen that we have grown was as small as 1.5 nm in average diameter. They are one order smaller in number of molecules included, compared to those that have been reported on aromatic microcrystallites, anthracene for example. Due to this, we were able to observe the 0-0 transition energy, which varied according as the number of molecules involved in the microcrystallites. We also observed the 0-0 absorption (excitation) spectrum, which depends on the molecular arrays in the microcrystallites. The 0-0 transition of a single molecule in poly-vinyl alcohol matrix is anticipated to be located at 22,885 cm⁻¹.     

Electron transport with mobility above 10–3 cm2/Vs in amorphous film of co‐planar bipyridyl‐substituted oxadiazole

We demonstrate that a bipyridyl substituted oxadiazole (Bpy‐OXD) shows high electron mobility that reached above 10^–3 cm²/Vs. We believe that the high mobility results from both the hybrid molecular structure of the two electron‐accepting units: bipyridyl and oxadiazole, and the planar molecular structure based on its lack of sterically hindered bulky substituent. The computational analysis elucidates that the amorphous nature of Bpy‐OXD in thin‐film state probably results from the polymorphic effect in isolated state and the volume effect in solid state. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Singular orbital magnetism of graphene

The origin of the singular diamagnetic susceptibility at the Dirac point is probed through the study of effects of band-gap opening and spatially varying magnetic field. In the presence of a band gap, the susceptibility is nonzero only inside the band gap and exhibits a discrete jump at the band edges down to zero in the conduction and valence bands. The jump height is understood in terms of the pseudo-spin paramagnetism arising from valley degree of freedom. In spatially varying magnetic field with wave vector q, the susceptibility becomes nonzero only in a finite energy region containing the Dirac point, determined by q. This behavior is understood in terms of electronic states numerically calculated in periodic magnetic field.