Energy level alignment between C60 and Al using ultraviolet photoelectron spectroscopy

The energy level alignment between C₆₀ and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C₆₀ and Al, C₆₀ was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C₆₀ deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C₆₀ layers. The observed vacuum level shift means that the interface dipole exists at the interface between C₆₀ and Al. The barrier height of electron injection from Al to C₆₀ is 0.11 eV, which is smaller value than that of hole injection.     

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Dielectron widths of the Gamma(1S,2S,3S) resonances

We determine the dielectron widths of the Gamma(1S), Gamma(2S), and Gamma(3S) resonances with better than 2% precision by integrating the cross section of e+e- -->Gamma over the e+e- center-of-mass energy. Using e+e- energy scans of the Gamma resonances at the Cornell Electron Storage Ring and measuring Gamma production with the CLEO detector, we find dielectron widths of 1.252+/-0.004(sigma(stat))+/-0.019(sigma(syst)) keV, 0.581+/-0.004+/-0.009 keV, and 0.413+/-0.004+/-0.006 keV for the Gamma(1S), Gamma(2S), and Gamma(3S), respectively.     

Generic Bell inequalities for multipartite arbitrary dimensional systems

We present generic Bell inequalities for multipartite arbitrary dimensional systems. The inequalities that any local realistic theory must obey are violated by quantum mechanics for even dimensional systems. A large set of variants are shown to naturally emerge from the generic Bell inequalities. We discuss particular variants of Bell inequalities that are violated for all the systems including odd dimensional systems.     

Current distribution and giant magnetoimpedance in composite wires with helical magnetic anisotropy

The giant magnetoimpedance effect in composite wires consisting of a non-magnetic inner core and soft magnetic shell is studied theoretically. It is assumed that the magnetic shell has a helical anisotropy. The current and field distributions in the composite wire are found by means of a simultaneous solution of Maxwell equations and the Landau–Lifshitz equation. The expressions for the diagonal and off-diagonal impedance are obtained for low and high frequencies. The dependences of the impedance on the anisotropy axis angle and the shell thickness are analyzed. Maximum field sensitivity is shown to correspond to the case of the circular anisotropy in the magnetic shell. It is demonstrated that the optimum shell thickness to obtain maximum impedance ratio is equal to the effective skin depth in the magnetic material.     

Superconducting energy gap distribution in c-axis oriented MgB2 thin film from point contact study

We have analyzed about a hundred voltage-dependent differential resistance dV/dI(V) curves of metallic point contacts between c-axis-oriented MgB₂ thin film and Ag, which exhibit clear Andreev reflection features connected with the superconducting gap. About one half of the curves show the presence of a second larger gap. The histogram of the double gap distribution reveals distinct maxima at 2.4 and 7 meV, while curves with single-gap features result in a more broad maximum at 3.5 meV. The double-gap distribution is in qualitative agreement with the distribution of gap values over the Fermi surface calculated by H. J. Choi et al. (cond-mat/0111183). The data unequivocally show the presence of two gaps: Δ_S=2.45±0.15 meV and Δ_L=7.0±0.45 meV in MgB₂ with the gap ratio Δ_L/Δ_S=2.85±0.15. Our observations further prove a widely discussed multigap scenario for MgB₂, where two distinct gaps are seen in the clean limit, while a single averaged gap is present in the dirty one.     

Probing antiferromagnetic order with heat capacity in exchange-biased structures

We explore the magnetic heat capacity in exchange-biased ferromagnet/antiferromagnet bilayers theoretically. We show that changes in the antiferromagnetic structure due to the reversal of the ferromagnet layer can be detected by distinct features in the heat capacity. This offers a method for probing antiferromagnetic domains in exchange-biased systems.     

Universal classes of magnetic-field- and electric-current-induced magnetic domain-wall dynamics in one and two dimensional regimes

Magnetic domain-wall (DW), interface between different magnetic domains, has received great attention due to its opportunities toward memory and logic devices as well as its abundant physical properties as a driven interface. Since recent advances of fabrication techniques allow us to scale down the devices, we are facing lower dimensional properties that should be elucidated undoubtedly. Here, we review recent progresses on DW dynamics in ferromagnetic nanowires and our recent experimental observation on the dimensionality transition of the DW dynamics driven by magnetic field and/or current. Our results show that the DW dynamics shows a transition from two to one dimensional behavior as the wire width decreases. In addition, we also demonstrate that the magnetic-field- and electric-current-driven DW dynamics in metallic ferromagnetic nanowires belong to the same universal class.     

Study of alkyl chain length dependent characteristics of imidazolium based ionic liquids [CnMIM]+[TFSA]− by Brillouin and dielectric loss spectroscopy

This study examined the acoustic phonon mode of ionic liquids consisting of 1-alkyl-3-methyl-imidazolium family (C_nMIM) cations with n values ranging from 2 to 10 and bis(trifluoromethylsulfonyl)amide (TFSA) anion in the temperature range from 300 K to 100 K. [C_nMIM]⁺[TFSA]^? showed depolarized (VH) components of Brillouin peaks at temperatures below the glass transition temperature when n is larger than 4. On the other hand, in the case of ionic liquids with different anions, such as [C₄MIM]⁺[BF₄]^?, [C₄MIM]⁺[PF₆]^? and [C₈MIM]⁺[BF₄]^?, the VH component of Brillouin peaks was not observed in the temperature range investigated. The dielectric loss spectra showed that the temperature dependence of alkyl chain domain relaxation of all ionic liquids followed the Arrhenius law and showed an increase in activation energy at the temperature where the VH component of Brillouin peak appeared. These results suggest that the observed depolarized component of Brillouin peak might originate from uniquely induced polarization in the 2nd domain composed of head groups of cations and anions.