Characterization of a laser-induced plasma by spatially resolved spectroscopy of neutral atom and ion emissions.: Comparison of local and spatially integrated measurements

The local values of the parameters that characterize a laser-induced plasma (temperature, electron density, relative number densities of neutral atoms and ions) have been obtained by spatially resolved emission spectroscopy, including the deconvolution of the measured intensity spectra. The plasma has been generated using a Nd:YAG laser with a Fe–Ni alloy in air at atmospheric pressure, and the emission in the time window 3.0–3.5 μs has been detected. The temperature values obtained from neutral atom and ion emissions have been compared in the cases of local and spatially-integrated measurements. Local Boltzmann and Saha–Boltzmann plots with high correlation to linear fittings have been obtained using two broad sets of optically thin neutral atom and ion lines (21 Fe I lines and 15 Fe II lines), resulting in local values of the electronic temperature that coincide within the error. These results of local measurements contrast with those of spatially integrated measurements, for which two different temperatures are obtained from the Boltzmann plots of neutral atoms (9100±150 K) and ions (13 700±300 K). This difference is explained according to the measured distributions of the electronic temperature and the neutral atom and ion number densities, that result in separated emissivity (or population) distributions of neutral atom and ion lines, leading to different neutral atom and ion apparent temperatures (population-averages of the local electronic temperature). Local values of the plasma parameters have been obtained at all the positions with significant emission, including the determination of the electronic temperature from Saha–Boltzmann or Boltzmann plots. The ionization degree is high- and low-varying at the inner part of the plasma, decaying only near the plasma front. The maximum of the ion density does not coincide with the temperature maximum; on the contrary, the axial variation of both the neutral atom and ion densities (that decrease towards the sample surface) is opposite to that of the temperature, a behaviour that is interpreted to result from the plasma expansion process.     

Effect of Nail Thickness on Visible Radiation Transmittance: Implications for New Photodynamic Therapy Technologies in Onychomycosis

Photodynamic therapy is taking importance as a nonintrusive treatment for nail onychomycosis. Knowledge of true transmittance values across nails could lead to qualitative and quantitative improvements in light-based treatments. We have characterized the spectral transmittance of healthy and fungally infected human fingernails and toenails according to nail thickness, and we propose a surface transmittance model for the small-scale optimization of light-based treatments. Transmittance of fingernails and toenails was analyzed by means of spectroradiometric measurements under solar-simulated visible light radiation (400 nm to 750 nm). The nail thickness was measured by means of microscope measurement. Transmittance was highest at longer wavelengths and decreased gradually as the wavelengths became shorter but with a significant nail transmittance of around 20% in the blue region of the spectrum. In the case of nails affected by onychomycosis, transmittance fell to under 10% because of the thickness of the nails, with no changes in spectral characteristics of transmitted light. Nail thickness is the main variable controlling exponentially light transmission in the visible spectrum and not only red radiation is effective for nail onychomycosis PDT. Blue light, the spectral band more effective for PPIX absorption is also effectively transmitted.     

Transition-metal-substituted indium thiospinels as novel intermediate-band materials: prediction and understanding of their electronic properties

Results of density-functional calculations for indium thiospinel semiconductors substituted at octahedral sites with isolated transition metals (M=Ti,V) show an isolated partially filled narrow band containing three t2g-type states per M atom inside the usual semiconductor band gap. Thanks to this electronic structure feature, these materials will allow the absorption of photons with energy below the band gap, in addition to the normal light absorption of a semiconductor. To our knowledge, we demonstrate for the first time the formation of an isolated intermediate electronic band structure through M substitution at octahedral sites in a semiconductor, leading to an enhancement of the absorption coefficient in both infrared and visible ranges of the solar spectrum. This electronic structure feature could be applied for developing a new third-generation photovoltaic cell.