中国区域间技术创新的空间溢出效应研究

本文结合新经济地理学K关联的思想构造了外部技术创新溢出指数模型,在此基础上运用2006~2014年中国30个省级行政区的面板数据对中国区域间技术创新空间溢出效应进行了实证研究,结果表明:(1)全国技术创新溢出效应主要是东部地区带动的,东部地区的省份对东部、中部和西部地区其他省份存在技术创新溢出效应,而中部和西部并没有对其他地区技术创新产生溢出效应,并且中部地区和西部地区内部各省之间存在竞争效应。(2)无论是全国还是东部、中部和西部地区,R&D经费、R&D人员和知识存量均对技术创新产生正向作用,并且这些地区的技术创新产出均处于规模报酬递减阶段,不同的是,全国、东部和中部地区R&D人员对技术创新的贡献比R&D资本要大,而西部地区R&D资本对技术创新的贡献则要大于R&D人员。     

电容应变式压力传感器原理及检测电路设计

论述了电容应变式压力传感器的原理，给出了一种电容应变式压力传感器的电路，并分析了压力大小与电路输出电压之间的关系。     

A General Random Walk Model of Molecular Motor

A general random walk model framework is presented which can be used to statistically describe the internaldynamics and external mechanical movement of molecular motors along filament track. The motion of molecular motorin a periodic potential and a constant force is considered. We show that the molecular motor‘s movement becomesslower with the potential barrier increasing, but if the forceis increased, the molecular motor‘s movement becomesfaster. The relation between the effective rate constant and the potential barrier‘s height, and that between the effectiverate constant and the value of the force are discussed. Our results are consistent with the experiments and relevanttheoretical consideration, and can be used to explain some physiological phenomena.     

蜡烛火焰三维温度场重建实验研究

本文在实验室中以蜡烛火焰为研究对象,研究采用辐射图像处理技术重建蜡烛三维温度场。并采用细丝热电偶实测火焰局部温度,对蜡烛火焰三维温度场可视化的结果进行了比较。结果表明,火焰高温区的重建温度是合理的,此方法能够很好地重建单峰、双峰三维温度分布。进一步证实了基于火焰图像处理技术实现三维温度场可视化的可行性。     

Obstacle Effects on One-Dimensional Translocation of ATPase

We apply a general random walk model to the study of the ATPase‘s one-dimensional translocation along obstacle biological environment, and show the effects of random obstacles on the ATPase translocation along single stranded DNA. We find that the obstacle environment can reduce the lifetime of ATPase lattice-bound state which results in the inhibition of ATPase activity. We also carry out the ranges of rate constant of ATPase unidirectonal translocation and bidirectional translocation. Our results are consistent with the experiments and relevant theoretical consideration, and can be used to explain some physiological phenomena.     

A Novel Fabrication Technique of Long Period Fiber Gratings

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Radiative recombination of excitons in semiconductors at high excitation intensities

The shape of the exciton luminescence band of the gaseous phase of free excitons in crystal Si is investigated under high level excitation. Only the exciton-exciton interaction is considered and the influence of collisions of excitons with phonons and electrons is not taken into account. The theoretical shape of the exciton luminescence band qualitatively agrees with experiment. The process of the radiative Auger-recombination of two indirect excitons without the participation of phonons is studied in Ge and Si. The expression for the frequency and temperature dependence of the probability of radiation is obtained. The band has the asymmetrical Gaussian form with the steep short-wave tail. The predicted luminescence band in Ge is shifted at the long-wavelength side from the well-known exciton luminescence bands with participation of the phonons. The selection rules for the probability amplitude of the process under consideration are obtained.     

Observation of superstructure formation on Rh{001} by laser-pulse assisted field evaporation

Pulsed-laser assisted field evaporation of the Rh{001} plane produces a p(2 × 2) structure. This structure can be destroyed by pulsed-laser heating the surface in the absence of an applied field, and can be restored to near perfection if the pulsed-laser heating is done in an applied field of 3 to 4 $\text{V}\text{A}\text{?}$. The degree of order increases with the applied electric field. The observed p(2 × 2) surface is therefore a field stabilized structure.     

固相萃取-超高效液相色谱-串联质谱法测定兽药制剂中巴比妥类药物

建立了固相萃取,结合超高效液相色谱-串联质谱(UPLC-MS/MS)测定兽药制剂中巴比妥、苯巴比妥、司可巴比妥和异戊巴比妥4种药物的方法.样品采用乙腈提取,HLB固相萃取柱净化,在ACQUITY BEH C18色谱柱(100 mm×2.1 mm,1.7 μm)上,以乙腈和水溶液为流动相梯度洗脱,质谱以多反应监测(MRM...     

脱粘缺陷对粘接结构频散特性的影响

采用全局矩阵理论,通过引入内聚强度弱化模型和弹簧模型,计算了脱粘缺陷对粘接结构频散特性的影响。分析了内聚强度缺陷、界面缺陷及混合缺陷等因素对粘接结构频散特性的影响,发现频散曲线的演化规律与材料声学性质密切相关。不同材料和不同组合,其规律有很大不同。针对各向同性粘接结构,可能通过考察特定频率段内频散模态的变化,实现对脱粘缺陷的检测。