Optical control of spin coherence in singly charged (In,Ga)As/GaAs quantum dots

Electron spin coherence has been generated optically in n-type modulation doped (In,Ga)As/GaAs quantum dots (QDs) which contain on average a single electron per dot. The coherence arises from resonant excitation of the QDs by circularly polarized laser pulses, creating a coherent superposition of an electron and a trion. Time dependent Faraday rotation is used to probe the spin precession of the optically oriented electrons about a transverse magnetic field. The coherence generation can be controlled by pulse intensity, being most efficient for (2n+1)pi pulses.     

Correlated electron states at level crossings of bilayer two-dimensional electron systems in tilted magnetic fields

We have measured the energy-level structure of high mobility, strongly coupled bilayer two-dimensional electron systems in tilted magnetic fields by means of magnetotransport experiments. At tilt angles where single-particle levels with opposite spin and symmetry cross, we observe a surprising sudden broadening of the quantum Hall plateaus and a deepening of the Shubnikov–de Haas minima. This observation is explained by an interaction-induced rearrangement of the energy level structure which strongly increases the energetic splitting of two (anti-)crossing levels.     

Ultrasmall nanoscale devices fabricated from compensating-layer GaAs/AlGaAs heterostructures

Nanoscale devices are fabricated from modulation-doped GaAs/AlGaAs heterostructures, where the two-dimensional electron system is initially depleted. Upon removing the p-type capping layer that compensates for the n-type supply layer, the electron system is induced. Arbitrarily shaped areal, line, and dot elements, i.e. the nanostructures and 2D leads, are simultaneously fabricated by patterning a thin resist layer with an atomic force microscope and subsequent selective wet etching. In this way a single-electron transistor (SET) with a 60 nm diameter island, a 60 nm wide electron waveguide (EWG), and an Aharonov–Bohm (AB) loop of 110 nm average diameter are prepared. Measurements at T=1.5 K reveal Coulomb-blockade, quantized conductance and AB-oscillations for the SET, EWG, and AB loop, respectively. Finally, an EWG is demonstrated in split-gate geometry where the compensating layer is used as split gate.     

Setup of a scanning near field infrared microscope (SNIM): imaging of sub-surface nano-structures in gallium-doped silicon

We have realized a scanning near-field infrared microscope in the 3-4 microm wavelength range. As a light source, a tunable high power continuous wave infrared optical parametric oscillator with an output power of up to 2.9 W in the 3-4 microm range has been set up. Using scanning near field infrared microscopy (SNIM) imaging we have been able to obtain a lateral resolution of < or =30 nm at a wavelength of 3.2 microm, which is far below the far-field resolution limit of lambda/2. Using this "chemical nanoscope" we could image a sub-surface structure of implanted gallium ions in a topographically flat silicon wafer giving evidence for a near-field contrast. The observed contrast is explained in terms of the effective infrared reflection as a function of the sub-surface gallium doping concentration. The future use of the setup for nm imaging in the chemically important OH, N-H and C-H stretching vibration is discussed.     

"Artificial atoms" in magnetic fields: wave-function shaping and phase-sensitive tunneling

We demonstrate the possibility to influence the shape of the wave functions in semiconductor quantum dots by the application of an external magnetic field B(z). The states of the so-called p shell, which show distinct orientations along the crystal axes for B(z) = 0, can be modified to become more and more circularly symmetric with an increasing field. Their changing probability density can be monitored using magnetotunneling wave function mapping. Calculations of the magnetotunneling signals are in good agreement with the experimental data and explain the different tunneling maps of the p(+) and p? states as a consequence of the different sign of their respective phase factors.     

Simple approach to microcomputer-controlled Electrochemistry

A simple control and data-acquisition system for electrochemical experiments is described. The system is easily interfaced to most potentiostats; a voltage waveform is supplied and data are collected, processed and stored on disk for later use. This implementation is particularly useful for linear-scan and stepped-potential electrochemical experiments. The experimeter can program an experiment as well as apply specialized data treatments to collected information. Some examples of stepped-potential experiments on a chemically-modified electrode are presented.