Optical generation of spin coherence in single-charged (In,Ga)As/GaAs self-assembled quantum dots

The generation of electron spin coherence has been studied in n-modulation-doped (In,Ga)As/GaAs self-assembled quantum dots (QDs) which contain on average a single electron per dot. The doping has been confirmed by pump–probe Faraday rotation experiments in a magnetic field parallel to the heterostructure growth direction. For studying spin coherence, the magnetic field was rotated by 90° to the Voigt geometry, and the precession of the electron spin about the field was monitored. The coherence is generated by resonant excitation of the QDs with circularly polarized laser pulses, creating a coherent superposition of an electron, and a trion state. The efficiency of the generation can be controlled by the pulse intensity, being most efficient for (2n+1)π pulses.     

Comparison of bismuth emitting liquid metal ion sources

In this paper, we report on studying of ZnO nanowire mats as an electrical nanomaterial with particular interest in their interaction with various gas surroundings for gas sensing characteristics. The ZnO nanowires were synthesized on sapphire substrates using a horizontal tube furnace. The techniques of Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), X-Ray Diffraction (XRD), and X-Ray Photoelectron Spectroscopy (XPS) were applied to determine the as-grown ZnO nanowires’ morphological and crystal structures, chemical composition and electronic states. Four-terminal current-voltage (I–V) measurements were used to examine the electrical conductance of the ZnO nanowire mats exposed to various testing gases with reference to the vacuum condition. Gas exposure experiments were conducted in a custom-built environmental chamber, which was filled with different testing gases. We observed the current being significantly influenced with ambient CO gas. The I–V behavior of CO gas was also found to be reversible and repeatable after the chamber evacuation, which indicates that the ZnO nanowire mats can be used for gas sensing purposes. A possible interactive model of nanowires and testing gas molecules is proposed to elucidate the sensing selective and sensitive mechanism for gas sensors.     

Intrinsic spin fluctuations reveal the dynamical response function of holes coupled to nuclear spin baths in (In,Ga)As quantum dots

The problem of how single central spins interact with a nuclear spin bath is essential for understanding decoherence and relaxation in many quantum systems, yet is highly nontrivial owing to the many-body couplings involved. Different models yield widely varying time scales and dynamical responses (exponential, power-law, gaussian, etc.). Here we detect the small random fluctuations of central spins in thermal equilibrium [holes in singly charged (In,Ga)As quantum dots] to reveal the time scales and functional form of bath-induced spin relaxation. This spin noise indicates long (400 ns) spin correlation times at a zero magnetic field that increase to ～5 μs as dominant hole-nuclear relaxation channels are suppressed with small (100 G) applied fields. Concomitantly, the noise line shape evolves from Lorentzian to power law, indicating a crossover from exponential to slow [～1/log(t)] dynamics.     

Magnetic barrier in a two-dimensional hole gas

Transport properties of a magnetic barrier in a Ga_xAl_1−xAs based two-dimensional hole gas are reported. A ferromagnetic cobalt film, separated by an AlO_x layer from the semiconductor in order to prevent leakage currents, is magnetized in-plane, such that the fringe field generates a localized perpendicular magnetic field acting as a magnetic barrier. The resistance as a function of the in-plane magnetic field shows a characteristic minimum at the coercive field of the ferromagnetic film. Semiclassical simulations based on the Landauer–Büttiker formalism show good agreement with the experiment.     

In-plane and perpendicular tunneling through InAs quantum dots

A Schottky diode with InAs dots in the intrinsic GaAs region was used to investigate perpendicular tunneling (in growth direction) through InAs quantum dots (QDs). At forward bias conditions electrons tunnel from the ohmic back contact into the metal Schottky gate. Peaks appear in the differential conductance when a QD level comes into resonance with the Fermi-level of the n-doped region. The observed tunneling features are attributed to electron transport through the s- and p-shell of the InAs islands. In our in-plane tunneling experiments the islands were embedded in the channel region of an n-doped GaAs/AlGaAs HEMT-structure. In order to study tunneling through single InAs islands, a quantum point contact was defined by lithography with an atomic force microscope and subsequent wet-chemical etching. In contrast to unpatterned devices sharp peaks appear in the I–V characteristic of our samples reflecting the transport of electrons through the p-shell of a single InAs QD.     

Optical Stark effect in a quantum dot: ultrafast control of single exciton polarizations

We report the first experimental study of the optical Stark effect in single semiconductor quantum dots (QD). For below band gap excitation, two-color pump-probe spectra show dispersive line shapes caused by a light-induced blueshift of the excitonic resonance. The line shape depends strongly on the excitation field strength and is determined by the pump-induced phase shift of the coherent QD polarization. Transient spectral oscillations can be understood as rotations of the QD polarization phase with negligible population change. Ultrafast control of the QD polarization is demonstrated.     

Phonon excitations of composite-fermion landau levels

Phonon excitations of fractional quantum Hall states at filling factors nu = 1/3, 2/5, 4/7, 3/5, 4/3, and 5/3 are experimentally shown to be based on Landau-level transitions of composite fermions. At filling factor nu = 2/3, however, a linear field dependence of the excitation energy in the high-field regime rather hints towards a spin transition excited by the phonons. We propose to explain this surprising observation by an only partially polarized 2/3 ground state, making the energetically lower lying spin transition also allowed for phonon excitations.     

Electrical readout of the local nuclear polarization in the quantum Hall effect: a hyperfine battery

It is demonstrated that the now well-established "flip-flop" mechanism of spin exchange between electrons and nuclei in the quantum Hall effect can be reversed. We use a sample geometry which utilizes separately contacted edge states to establish a local nuclear spin polarization--close to the maximum value achievable--by driving a current between electron states of different spin orientation. When the externally applied current is switched off, the sample exhibits an output voltage of up to a few tenths of a mV, which decays with a time constant typical for the nuclear spin relaxation. The surprising fact that a sample with a local nuclear spin polarization can act as a source of energy and that this energy is well above the nuclear Zeeman splitting is explained by a simple model which takes into account the effect of a local Overhauser shift on the edge state reconstruction.     

Two-dimensional plasmons in hole space charge layers on silicon

We have observed two-dimensional plasmons in hole space charge layers of silicon. On Si(110) surfaces the plasmon mass depends on the charge density and shows a significant anisotropy for different directions of the plasmon wavevector in the surface. The determination of the plasmon mass allows detailed informations on the anisotropic and nonparabolic 2-D bandstructure of hole space charge layers.