Photoluminescence lineshape features of carbon δ-doped GaAs heterostructures

Photoluminescence lineshape properties of quasi-two-dimensional electron systems in setback δ-doped GaAs heterostructures are studied at liquid helium temperature. Contributions from the ground and the first excited two-dimensional subband are clearly observed. A simple fit to the lineshape including broadening demonstrates that there is an exponential low-energy tail associated with the ground subband. No such tail is observed for the first excited subband. The fit precisely reveals the subband bottom energies, the Fermi energy, the electron temperature and the recombination intensities. A self-consistent calculation of subband properties including the potential contribution of the setback δ-doping reproduces well the subband properties and the recombination intensities.     

Probing single-charge fluctuations at a GaAs/AlAs interface using laser spectroscopy on a nearby InGaAs quantum dot

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with ±5 nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.     

An adeno-associated viral vector transduces the rat hypothalamus and amygdala more efficient than a lentiviral vector

Background  

This study compared the transduction efficiencies of an adeno-associated viral (AAV) vector, which was pseudotyped with an AAV1 capsid and encoded the green fluorescent protein (GFP), with a lentiviral (LV) vector, which was pseudotyped with a VSV-G envelop and encoded the discosoma red fluorescent protein (dsRed), to investigate which viral vector transduced the lateral hypothalamus or the amygdala more efficiently. The LV-dsRed and AAV1-GFP vector were mixed and injected into the lateral hypothalamus or into the amygdala of adult rats. The titers that were injected were 1 × 10⁸ or 1 × 10⁹ genomic copies of AAV1-GFP and 1 × 10⁵ transducing units of LV-dsRed.     

Mapping of the hole wave functions of self-assembled InAs-quantum dots by magneto-capacitance–voltage spectroscopy

We have performed magneto-capacitance–voltage spectroscopy for the valence band states of InAs quantum dots embedded in a p-type Schottky diode. By choosing the right measurement frequency and applying an in-plane magnetic field, we were able to map the k-space wave functions corresponding to the individual charging peaks. The wave functions belonging to the first two charging peaks show no nodes as expected for an s-like ground state. In contrast, nodes are observed for the next four charging peaks supporting the identification as excited states with finite orbital angular momentum. Peaks 3 and 4 show different wave functions compared to peaks 5 and 6, which points to different angular momenta for this two pairs of charging peaks.     

Coherent dynamics in InGaAs quantum dots and quantum dot molecules

We measure the dephasing time of the exciton ground state transition in InGaAs quantum dots (QD) and quantum dot molecules (QDM) using a sensitive four-wave mixing technique. In the QDs we find experimental evidence that the dephasing time is given only by the radiative lifetime at low temperatures. We demonstrate the tunability of the radiatively limited dephasing time from 400 ps up to 2 ns in a series of annealed QDs with increasing energy separation of 69–330 meV from the wetting layer continuum. Furthermore, the distribution of the fine-structure splitting δ₁ and of the biexciton binding energy δ_B is measured. δ₁ decreases from 96 to with increasing annealing temperature, indicating an improving circular symmetry of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole. In the QDM we measured the exciton dephasing as function of interdot barrier thickness in the temperature range from 5 to 60 K. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed, showing how the quantum mechanical coupling in the molecules affects the exciton lifetime and acoustic-phonon interaction.     

Dynamics of nuclear spins appearing in transport measurements of an inter-edge spin diode in tilted magnetic fields

In a wide range of magnetic fields nonlinear transport between spin polarized edge channels is studied. The observed hysteresis of the I–V characteristic is attributed to the dynamic nuclear spin polarization due to the electronic spin-flip processes. We find extremely long nuclear spin relaxation times in the regime where the hyperfine interaction with electrons is switched off.     

Experimental investigation of the edge states structure at fractional filling factors

We experimentally study the electron transport between edge states in the fractional quantum Hall effect regime. We find an anomalous increase of the transport across the 2/3 incompressible fractional stripe in comparison with the theoretical predictions for the smooth edge potential profile. We interpret our results as a first experimental demonstration of the intrinsic structure of the incompressible stripes arising at the sample edge in the fractional quantum Hall effect regime.     

Interaction effects observed in the magnetization of a bilayer two-dimensional electron system

We present magnetization measurements of a bilayer two-dimensional electron system with strong coupling between the wells. Magnetization steps related to transitions of the chemical potential between Landau levels and between anti-symmetric and symmetric states are observed; however, the step sizes do not fit into a simple single-particle figure. A further indication of interaction effects is a peculiar magnetization peak that arises on top of the magnetization step associated with the transition to the lowest Landau level.     

Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures

We describe the major requirements to experimentally perform and observe resonant spin-flip Raman scattering on excitonic resonances in low-dimensional semiconductors. We characterize in detail the properties of this resonant light scattering technique and evaluate the criteria, which must be fulfilled by the experimental setup and the semiconductor sample studied to be able to observe a spin-flip scattering process. We also demonstrate the influence of additional unpolarized laser illumination with energies, which exceed considerably the band gap energy of the semiconductor nanostructure under study, on the resonantly excited electron spin-flip scattering in InAs-based quantum dot ensembles as well as on the paramagnetic Mn-ion spin-flip in (Zn,Mn)Se/(Zn,Be)Se quantum wells.