Synchrotron radiation and its application

In this paper, the basic formulas are derived for the theory of synchrotron radiation and some important practical applications of synchrotron radiation are discussed, as well as the prospects for the further development of these investigations.Plenary Report, deliverd at the opening of the All-Union Conference on The Development and Practical Application of Electron Accelerators, September 3, 1975.Translated from Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 7–16, April, 1976.     

Bismuth(III) Halide Complexes: New Structural Types and New Application Areas

Recent advances in studies of bismuth(III) halide complexes (HBs) are reviewed concisely. New structural types of HBs and some of their physical properties that show the greatest promise for application and attract the greatest attention of researchers are discussed.     

Study of the technological limitations of photolithography for the relief surface of a SOI wafer during formation of the three-dimensional micromechanical structure of an integral tensoconverter

The results of studying the formation of the three-dimensional micromechanical structure of an integral tensoconverter are presented. The technological restrictions on contact photolithography over the relief structure formed on the device layer of the silicon-on-insulator wafer are analyzed. The effect of the design parameters (the frame height and the width of the frame slit) are described.     

Reconstruction of scattering properties of rough air-dielectric boundary

The article is devoted to elaboration of the method of reconstruction of rough surface scattering properties. The object with rough surface is made of transparent dielectric material. Typically these properties are described with bi-directional scattering distribution function (BSDF). Direct measurement of such function is either impossible or very expensive. The suggested solution provides physically reasonable method for the rough surface BSDF reconstruction. The method is based on Monte-Carlo ray tracing simulation for BSDF calculation. Optimization technique is further applied to correctly reconstruct the BSDF. The results of the BSDF reconstruction together with measurement results are presented in the article as well.     

Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

Dislocation structure of Ge_xSi_1?x films (x=0.4?0.8) grown by molecular-beam epitaxy on Si(001) substrates was studied by means of transmission electron microscopy. It was found that the density of edge MDs formed at the early stage of plastic strain relaxation in the films could exceed the density of 60° MDs. In our previous publications, a predominant mechanism underlying the early formation of edge misfit dislocations (MD) in Ge_xSi_1?x/Si films with x>0.4 was identified; this mechanism involves the following processes. A 60° glissile MD provokes nucleation of a complementary 60° MD gliding on a mirror-like tilted plane (111). A new edge MD forms as a result of interaction of the two complementary 60° MDs, and the length of the newly formed edge MD can then be increased following the motion of the “arms” of the complementary 60° MDs. Based on this scenario of the edge MD generation process, we have calculated the critical thickness of insertion of an edge MD into GeSi layers of different compositions using the force balance model. The obtained values were found to be more than twice lower than the similar values for 60° MDs. This result suggests that a promising strategy towards obtaining dislocation arrays dominated by 90° dislocations in MBE-grown Ge_xSi_1?x/Si films can be implemented through preliminary growth on the substrate of a thin, slightly relaxed buffer layer with 60° MDs present in this layer. The dislocated buffer layer, acting as a source of threading dislocations, promotes the strain relaxation in the main growing film through nucleation of edge MDs in the film/buffer interface. It was shown that in the presence of threading dislocations penetrating from the relaxed buffer into the film nucleation of edge MDs in the stressed film can be initiated even if the film thickness remains small in comparison with the critical thickness for insertion of 60° MDs. Examples of such unusual MD generation processes are found in the literature.     

Norbornene hydroarylation catalyzed by ferrocene palladacycle complexes

Two ferrocene derivatives containing palladacycles with bidentate (C,N) and tridentate (C,N,N) ligands were successfully used as catalysts for the hydroarylation of norbornene.     

Domain structure of a thin single-crystal plate of terbium iron garnet near the magnetic compensation point

The domain structure of a thin single-crystal plate of the iron garnet Tb₃Fe₅O₁₂ has been investigated using the magneto-optical method in the temperature range near the magnetic compensation point of this ferrimagnet T _c = 248.6 K. It has been shown that, when the temperature of the sample approaches the magnetic compensation point, the domain width significantly increases, but remains finite at T = T _c . The magnetic H-T phase diagram, which determines the boundary between the multidomain and domain-free (uniformly magnetized) states of the sample, has been constructed using the data on visual observations of the transformation of the domain structure with variations in the temperature and external magnetic field. The results obtained have been interpreted in terms of the thermodynamic theory of stability of different magnetic phases of a two-sublattice cubic ferrimagnet near T _c .