Physical processes underlying the development of shear turbulence

A physical model of the development of turbulence in free shear flows is proposed. The model is based on the results of numerical simulations of turbulent flow development. The main ideas of the proposed theory of turbulence are stated as follows: the onset of turbulence begins with the formation of large vortices; spectral energy transfer involves both direct and inverse cascades; and the inertial range of the energy spectrum develops as a result of concurrent direct and inverse cascades. The dominant physical factors that determine the spectrum include Joukowski forces.     

The contribution of the central region of the electron energy spectrum to the total double photoionization cross section of helium in the asymptotic nonrelativistic energy region

The double photoionization of helium at high photon energies is considered using a nonrelativistic approach. The central region of the energy spectrum and its contribution to the total process cross section and to the ratio between the double and single ionization cross sections are studied. Interelectronic interaction in the initial state is included exactly, whereas the interaction between the fast outgoing electrons is calculated by perturbation theory. A detailed derivation of the expression for the cross section ratio between double and single ionizations is given. The corresponding results obtained by other authors are analyzed and corrected.     

Effect of internal waves on the intensity and interference structure of the sound field in a shelf zone

Experimental data obtained by studying the effect of internal waves with known space-time parameters on the propagation of a 240-Hz tone signal and on the space-time interference structure of the sound field generated by a noiselike sound source are presented.     

Effect of lattice deformation and phase transitions on the electronic spectra of TlGaS<Subscript>2</Subscript>, TlGaSe<Subscript>2</Subscript>, and TlInS<Subscript>2</Subscript> layered semiconductors

The effect of the lattice deformation on the electronic spectra of TlGaS₂, TlGaSe₂, and TlInS₂ layered semiconductor crystals is analyzed. It is shown that changes in the band gap of these semiconductors due to thermal expansion and a change in the composition under hydrostatic or uniaxial pressure can be described within a unified model of the deformation potential. The main feature of this model is the inclusion of deformation potentials with different signs, which is characteristic of other semiconductors with a layered structure. An analysis of the lattice deformation of the studied semiconductors in terms of the proposed model of the deformation potential has revealed that, in the immediate vicinity of the phase transitions, the crystal lattice under pressure undergo an unusual deformation.     

Measurement uncertainty of selenium determination in the reference material Seronorm Trace Elements Serum by hydride generation atomic fluorescence spectrometry

 An analytical result is not considered to be complete without a statement of the measurement uncertainty associated with it. Evaluation of measurement uncertainty is therefore an essential part of every determination. In the present study the measurement uncertainty of the result of determination of selenium in the reference material Seronorm Trace Elements Serum was studied. The combination of a digestion procedure using sulfuric acid, V₂O₅ in H₂SO₄ and hydrogen peroxide and the continuous flow approach of hydride generation atomic fluorescence spectrometry (HG-AFS) detection was used for selenium determination. The total uncertainty budget was calculated with the help of the GUM Workbench program, in which computations follow the rules of the ’ISO guide to the expression of uncertainty in measurement’. The major sources of uncertainty were found to be due to the recovery of the procedure, measurement of peak heights and the purity of Na₂SeO₃. A selenium mass fraction of 77.1±4.8 ng/g (with a coverage factor of 2.1, 95% probability) was determined, which is comparable with the recommended value of 80 ng/g. Received: 13 September 2002 Accepted: 23 December 2002 Acknowledgements We would like to thank Tinkara Buˇcar, B.Sc. for useful discussions and the IAEA Vienna, for financial support of the project 11553/RO. Presented at CERMM-3, Central European Reference Materials and Measurements Conference: The function of reference materials in the measurement process, May 30–June 1, 2002, Rogaška Slatina, Slovenia Correspondence to V. Stibilj     

Structure and electronic properties of hydrogenated amorphous GaP

Hydrogenated amorphous GaP films have been prepared by reactive rf sputtering. Infrared spectroscopy, optical transmission and reflection, photothermal deflection spectroscopy and dc conductivity have been studied to investigate the local bonding configurations, the optical absorption edges and the temperature dependence of the conductivity as a function of hydrogen content. The results are discussed and compared with the effects of hydrogenation on amorphous Si.     

Photoproduction of η′(958)-Mesons on Protons

Russian Physics Journal -     

Mathematical Simulation of the Synthesis of cis-1,4-Polybutadiene on a Cobalt-Containing Catalyst in the Presence of Ethylene

Based on an analysis of experimental results and published data, the main elementary steps of the anionic coordination polymerization of butadiene rubber on a cobalt-containing catalyst in the presence of ethylene were found, and a mathematical model of the periodic process at an optimum water content was developed. The molecular-weight characteristics of the process depending on ethylene concentration were studied with the use of this model.     

Experience of Control over Process of Chemical-Informational Synthesis

Conditions under which various kinds of carbon nanoparticles are obtained by thermal oxidative conversion of methane in chlorine in the temperature range 20-500°C were studied. The influence exerted by conditions of synthesis of nanodispersed carbon on the properties of its samples was analyzed.     

Nature of physical phenomena in ferroelectric relaxors

The nature of physical phenomena in ferroelectric relaxors, i.e., ferroelectrics undergoing smeared phase transitions, is discussed. These phenomena are closely related to the dynamics of polar regions (PRs), in which thermal fluctuations cause relaxation processes that control the crystal properties. The PRs interact with one another not only via electrical but also via mechanical interactions, and the deformed paraelectric interlayers between PRs play an important role in the transition to a macrodomain state.