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971.
972.
G. Jander und W. Brösse 《Fresenius' Journal of Analytical Chemistry》1929,77(3-4):147-148
Ohne Zusammenfassung 相似文献
973.
974.
W. von Oertzen 《Acta Physica Hungarica A》2003,18(2-4):157-170
Nuclear clustering in N = Z nuclei has been studied for many decades. Of particular relevance are states close to the decay thresholds, as described by the Ikeda diagram. Recent interest has focused on loosely bound systems as observed with exotic nuclei. Extreme deformations are simultaneously observed. In the deformed shell model these are referred to as super- and hyper-deformation. Another feature related to clustering is the development of octupole deformations. A possible approach to describe these states is to use explicitly molecular concepts, with neutrons in covalent binding orbits. Examples for molecular structure in beryllium isotopes and in other neutron-rich light nuclei (carbon and neon) are now well established. The predicted chain states in the carbon isotopes are the first example of structures with an axis ratio of 3:1. A threshold diagram for molecular configurations in nuclei with clusters and covalent neutrons can be established. 相似文献
975.
Porous silicon (PS) exhibits several photoluminescence (PL) bands, whose spectral position and intensity depend strongly on the actual conditions of preparation of PS, its treatment, and subsequent use. The PS PL band peaking at about 1.8 eV and usually assigned to the intrinsic emission of silicon nanocrystals was studied. It was shown that the temperature-induced variation of the PL kinetics in the 80 to 300-K interval follows a complex pattern and depends noticeably on the actual point on the band profile. The temperature behavior of PL decay in the 1.8-eV band is determined by the electron-hole recombination rate within a nanocrystal and the cascade carrier transitions from small to large nanocrystals, with an attendant decrease in energy. 相似文献
976.
Solid state nuclear track detectors are commonly used for measurements of concentrations of radon gas and/or radon progeny. All these measurements depend critically on the thickness of the removed layer during etching. However, the thickness of removed layer calculated using the etching period does not necessarily provide a sufficiently accurate measure of the thickness. For example, the bulk etch rate depends on the strength of stirring during etching for the LR 115 detector. We propose here to measure the thickness of the removed layer by using energy-dispersive X-ray fluorescence spectrometry. In the present work, a reference silver nitrate pellet is placed beneath the LR 115 detector, and the fluorescence X-ray intensity for silver is then measured. We have found a linear relationship between the X-ray intensity and the thickness of the removed layer for LR 115 detector. This provides a fast method to measure the thickness of removed layer from etching of LR 115 detector. However, this method was found to be inapplicable for the CR-39 detector. Therefore, alternative methods have yet to be explored for the CR-39 detector. 相似文献
977.
A. I. Morozov 《Physics of the Solid State》2003,45(8):1487-1492
The contribution to electrical resistance due to scattering of charge carriers by domain walls is analyzed. It is revealed that “unusual” domain walls are created by frustrations in ferromagnet-antiferromagnet multilayer magnetic structures. The thickness of an unusual domain wall is substantially less than that of a usual domain wall. It is shown that scattering of charge carriers by unusual domain walls can contribute significantly to the magnetoresistance of ferromagnet-antiferromagnet multilayer magnetic structures. An analysis of the contribution made by the Levy-Zhang mechanism to the magnetoresistance demonstrates that the initial estimate obtained for this contribution is considerably exaggerated. 相似文献
978.
P.A. Sinclair 《Discrete Mathematics》2004,286(3):177-184
Let G be a connected graph with minimum degree at least 3. We prove that there exists an even circuit C in G such that G−E(C) is either connected or contains precisely two components one of which is isomorphic to a 1-bond. We further prove sufficient conditions for there to exist an even circuit C in a 2-connected simple graph G such that G−E(C) is 2-connected. As a consequence of this, we obtain sufficient conditions for there to exist an even circuit C in a 2-connected graph G for which G−E(C) is 2-connected. 相似文献
979.
980.
H. E. Schweyer R. N. Traxler und L. A. H. Baum 《Fresenius' Journal of Analytical Chemistry》1940,119(1-2):58
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