An infinite family of simply connected flag-transitive tilde geometries

We consider tilde-geometries (orT-geometries), which are geometries belonging to diagrams of the following shape: Here the rightmost edge stands for the famous triple cover of the classical generalized quadrangle related to the group Sp₄(2). The automorphism group of the cover is the nonsplit extension 3·Sp₄(2) – 3 ·S ₆. Five examples of flag-transitiveT-geometries were known. These are rank 3 geometries related to the groupsM ₂₄ (the Mathieu group),He (the Held group) and and 3⁷·Sp₆(2) (a nonsplit extension); a rank 4 geometry related to the Conway groupCo ₁ and a rank 5 geometry related to the Fischer-Griess Monster groupF ₁. In the present paper we construct an infinite family of flag-transitiveT-geometries and prove that all the new geometries are simply connected. The automorphism group of the rankn geometry in the family is a nonsplit extension of a 3-group by the symplectic group Sp_2n (2). The rank of the 3-group is equal to the number of 2-dimensional subspaces in ann-dimensional vector space over GF(2).     

Bethe-Salpeter equation for non-self conjugate mesons in a power-law potential

We develop an approach to the solution of the spinless Bethe-Salpeter equation for the different-mass case. Although the calculations are developed for spinzero particles in any arbitratry spherically symmetric potential, the non-Coulombic effective power-law potential is used as a kernel to produce the spin-averaged bound states of the non-self-conjugate mesons. The analytical formulas are also applicable to the self-conjugate mesons in the equal-mass case. The flavor-independent case is investigated in this work. The calculations are carried out to the third-order correction of the energy series. Results are consistent with those obtained before.     

Electrodialysis of Hydrosols of Ultradispersed Diamonds

The electrical conductivity of hydrosols of ultradispersed diamonds was studied. The electromembrane method for cleaning and concentrating of ultradispersed diamonds in hydrosols was considered. The influence exerted by the concentration of the dispersed phase on the electrical characteristics of the cleaning process was analyzed. A mathematical relation making it possible to evaluate the output characteristics of the process and to determine the geometrical characteristics of the apparatus was proposed.     

Spin effects in instanton models

Nonperturbative nolocal structure of QCD vacuum is well described by instanton model. Specific helicity and flavor structure of zero modes of quarks, in instanton field allows simultaneously to explain some important features of low-and high-energy hadron phenomemology. The basic characteristics of hadron spectrum, partonic sum rules, heavyquark potential etc within the instanton liquid model are briefly discussed.     

Forecasting call frequency at a financial services call centre

A forecasting model is developed for the number of daily applications for loans at a financial services telephone call centre. The purpose of the forecasts and the associated prediction intervals is to provide effective staffing policies within the call centre. The model building process is constrained by the availability of only 2 years and 7 months of data. The distinctive feature of the data is that demand is driven in the main by advertising. The analysis given focuses on applications stimulated by press advertising. Unlike previous analyses of broadly similar data, where ARIMA models were used, a model with a dynamic level, multiplicative calendar effects and a multiplicative advertising response is developed and shown to be effective.     

Radiation bursts from particles in the field of compact, impenetrable, astrophysical objects

The radiation emitted by charged, scalar particles in a Schwarzschild field with maximal acceleration corrections is calculated classically and in the tree approximation of quantum field theory. In both instances the particles emit radiation that has characteristics similar to those of gamma-ray bursters.     

Surface grating formation and erasing on a-Se films

Surface relief formation at holographic recording on amorphous selenium films was demonstrated and investigated. The presence of this optical phase modulation component is essential for ensuring significant, stable and erasable optical recording in a-Se films at 290–320 K temperatures, where conventional photodarkening was known as insignificant and unstable. Photocrystallization can only be observed in super-exposed a-Se films at the given experimental conditions of hologram recording. Erasing behavior of surface relief gratings under heat treatment was also investigated in order to reveal further details of the mechanism. Photoinduced structural transformations within the amorphous phase, connected to local ordering under the condition of light-induced fluidity, are proposed as an explanation for the relief formation and erasing. The observed reversible optical recording process may be useful for the various optoelectronic applications of photoconductive a-Se layers. Received: 12 June 2000 / Accepted: 6 June 2001 / Published online: 30 August 2001     

Quantum-well states and resonances in thin single-crystal layers of noble metals on W(110) substrates

This paper reports on the first experimental observation of quantum-well states and sp-type resonances in thin single-crystal gold, silver, and copper layers formed on single-crystal W(110) surfaces, which result from spatial localization of Bloch-type electronic wave functions in a quantum well with potential barriers at the vacuum/metal and metal/W(110) interfaces. The quantization of the valence-band electronic structure in Au/W(110), Ag/W(110), and Cu/W(110) systems was studied experimentally using angle-resolved photoelectron spectroscopy.     

An investigation of the Al2O3-CdSe interface in accumulation

The Al₂O₃−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al₂O₃ with a concentration varying from 4·10¹⁸ to 10¹⁹ cm⁻³ eV⁻¹. The surface states have a negligible influence on the thin-film transistor operation.