首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   611333篇
  免费   4651篇
  国内免费   1479篇
化学   307377篇
晶体学   8751篇
力学   31556篇
综合类   24篇
数学   81845篇
物理学   187910篇
  2021年   5652篇
  2020年   6108篇
  2019年   6987篇
  2018年   9472篇
  2017年   9616篇
  2016年   13073篇
  2015年   6959篇
  2014年   11795篇
  2013年   26661篇
  2012年   20687篇
  2011年   24716篇
  2010年   18679篇
  2009年   18681篇
  2008年   23432篇
  2007年   23236篇
  2006年   21090篇
  2005年   18829篇
  2004年   17655篇
  2003年   15912篇
  2002年   15914篇
  2001年   17117篇
  2000年   13161篇
  1999年   10166篇
  1998年   8858篇
  1997年   8678篇
  1996年   8073篇
  1995年   7299篇
  1994年   7261篇
  1993年   7061篇
  1992年   7439篇
  1991年   8041篇
  1990年   7665篇
  1989年   7632篇
  1988年   7404篇
  1987年   7213篇
  1986年   6892篇
  1985年   8805篇
  1984年   9119篇
  1983年   7726篇
  1982年   8006篇
  1981年   7518篇
  1980年   7076篇
  1979年   7741篇
  1978年   8048篇
  1977年   7978篇
  1976年   7966篇
  1975年   7641篇
  1974年   7432篇
  1973年   7789篇
  1972年   5811篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
21.
The problem of exciting bulk elastic waves at the surface of a piezoelectric with symmetries 422,622 has been solved by a successive approximation method. In the approximation of a fixed electric field, created at the surface of the piezoelectric crystal by a two-electrode transducer, the distributions are found for the shear wave stress and the energy flux density in the far zone. The equivalent circuit parameters for a two-electrode radiator are determined taking account of the dynamic piezoelectric correction obtained in the second approximation. The equivalent circuit parameters and the transducer loss are treated for TeO2 crystals. A realistic possibility of using surface transducers in the development of acousto-optic modulators in the s.h.f. region is shown. Tomsk State Academy of Control Systems and Radio Electronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 8–15, January, 1997.  相似文献   
22.
23.
We have used both reflection-geometry and grazing-incidence-geometry X-ray scattering to study thin films of C60 evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C60 planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Å. In the film plane the C60 is at best pseudo-epitaxial, with a 0.9° distribution of crystallite orientations, a 450 Å in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy.  相似文献   
24.
An estimate of the factors which influence the rate of growth of filamentary silicon crystals in a standard chloride system using a quartz reactor with hot walls is given. It is shown that a diffusion form of crystallization is observed under the conditions investigated.Voronezh State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 22–26, October, 1995.  相似文献   
25.
On the basis of the method of successive approximations in formal series we construct systems of particular solutions of the equations of planar and flexural harmonic vibrations of thin rectilinear anisotropic plates with a plane of symmetry of elastic properties parallel to the faces. The solutions constructed are classified as special sk-functions of generalized complex variables. Translated fromTeoreticheskaya i Prikladnaya Mekhanika No. 24, 1993, pp. 54–61.  相似文献   
26.
Nonperturbative nolocal structure of QCD vacuum is well described by instanton model. Specific helicity and flavor structure of zero modes of quarks, in instanton field allows simultaneously to explain some important features of low-and high-energy hadron phenomemology. The basic characteristics of hadron spectrum, partonic sum rules, heavyquark potential etc within the instanton liquid model are briefly discussed.  相似文献   
27.
The radiation emitted by charged, scalar particles in a Schwarzschild field with maximal acceleration corrections is calculated classically and in the tree approximation of quantum field theory. In both instances the particles emit radiation that has characteristics similar to those of gamma-ray bursters.  相似文献   
28.
Surface relief formation at holographic recording on amorphous selenium films was demonstrated and investigated. The presence of this optical phase modulation component is essential for ensuring significant, stable and erasable optical recording in a-Se films at 290–320 K temperatures, where conventional photodarkening was known as insignificant and unstable. Photocrystallization can only be observed in super-exposed a-Se films at the given experimental conditions of hologram recording. Erasing behavior of surface relief gratings under heat treatment was also investigated in order to reveal further details of the mechanism. Photoinduced structural transformations within the amorphous phase, connected to local ordering under the condition of light-induced fluidity, are proposed as an explanation for the relief formation and erasing. The observed reversible optical recording process may be useful for the various optoelectronic applications of photoconductive a-Se layers. Received: 12 June 2000 / Accepted: 6 June 2001 / Published online: 30 August 2001  相似文献   
29.
This paper reports on the first experimental observation of quantum-well states and sp-type resonances in thin single-crystal gold, silver, and copper layers formed on single-crystal W(110) surfaces, which result from spatial localization of Bloch-type electronic wave functions in a quantum well with potential barriers at the vacuum/metal and metal/W(110) interfaces. The quantization of the valence-band electronic structure in Au/W(110), Ag/W(110), and Cu/W(110) systems was studied experimentally using angle-resolved photoelectron spectroscopy.  相似文献   
30.
The Al2O3−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al2O3 with a concentration varying from 4·1018 to 1019 cm−3 eV−1. The surface states have a negligible influence on the thin-film transistor operation.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号