Fundamental processes in long air gap discharges

The development of atmospheric lightning is initiated and sustained by the formation in virgin air of ‘streamer corona’ and ‘leader’ discharges, very similar to those observed in laboratory long sparks. Therefore, the experimental and theoretical investigations of these laboratory discharges have become of large interest to improve the physical knowledge of the lightning process and to develop self-consistent models that could be applied to new protection concepts.In the present paper the fundamental processes of the subsequent phases of long air gap discharges are analyzed, from the first corona inception and development to the leader channel formation and propagation. For all these processes simulations models are discussed that have been essentially derived and simplified by the authors, in order to develop sequential time-dependent simulation of the laboratory breakdown, with both positive and negative voltages. The possibility of extending these models to the case of natural lightning is discussed in the companion paper, presented in this same volume. To cite this article: I. Gallimberti et al., C. R. Physique 3 (2002) 1335–1359.     

Automatic error correction in inflected languages

Systems for automatic detection and correction of spelling errors in natural language texts are considered. The development of such systems for both English and Russian (and for inflected languages in general, including all Slavic languages) is discussed. An approach associated with morphological analysis of the wordforms in the given text is described. The topics considered in the paper include the main methods of automatic spelling correction, levels of automation of the spelling error correction process, the effect of the type of computer used, the use of spelling error correctors in a stand-alone mode and in combination with word-processing software, and the maintenance of auxiliary dictionaries.Translated from Itogi Nauki i Tekhniki, Seriya Teoriya Veroyatnostei, Matematicheskaya Statistika, Teoreticheskaya Kibernetika, Vol. 28, pp. 111–139, 1988.     

Some empirical relations for electron mobility in II–VI compound semiconductors

Electron mobility has been calculated in a number of binary II–VI compound semiconductors using a displaced Maxwellian distribution function and taking the various scattering mechanisms into consideration at different lattice temperatures and for various amounts of ionized impurity concentrations. It is observed that the low field mobility values can be expressed by a cubic power relationship with lattice temperature and with ionized impurity concentration using a least mean square fit technique with an accuracy better than 5 per cent. Similarly, the field dependence of mobility can also be expressed as a power series of the applied electric field. It is suggested that these equations can be profitably used for a quick estimation of mobility values as a check on experiments and also as sufficiently accurate formulae for simulation and modelling purposes.     

Universal algebras

A survey of the development of the theory of universal algebras in the years 1976–1988. Such basic directions of development of this theory as classes of universal algebras (varieties, quasivarieties, etc.), Mal'tsev conditions, congruences, sheaves, homomorphisms, subalgebras, products of algebras, clones of operations, completeness, systems of equations in algeberas, and connections with computer mathematics show up in it. Considerable attention is given to concrete classes of algebras (p-algebras, BCK-algebras, unary algebras, etc.).Translated from Itogi Nauki i Tekhniki, Seriya Algebra, Topologiya, Geometriya, Vol. 27, pp. 45–124, 1989.     

Polynomial-time computation of the degree of a dominant morphism in zero characteristic. II

Consider a projective algebraic variety W which is an irreducible component of the set of all common zeros of a family of homogeneous polynomials of degrees less than d in n + 1 variables over a field of zero characteristic. Consider a dominant rational morphism from W to W′ given by homogeneous polynomials of degree d′. We suggest algorithms for constructing objects in general position related to this morphism. They generalize some algorithms from the first part of the paper to the case dim W > dim W′. These algorithms are deterministic and polynomial in (dd′)n and the size of the input. Bibliography: 12 titles. __________ Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 325, 2005, pp. 181–224.     

Analogue of a spin flop phase transition for an array of magnetic moments with dipole interaction

In a two-dimensional array of magnetic moments with planar magnetization and relatively weak anisotropy in the basal plane, a stepwise phase transition is induced by an external magnetic field parallel to the easy axis of the system. This transition is similar to the spin flop phase transition in weakly anisotropic Heisenberg antiferromagnets with the significant difference that it is accompanied by the rearrangement of the sublattice structure of the magnet; i.e., it can be interpreted as a topological transition. The transition should manifest itself for arrays of submicron magnetic particles (magnetic dots) on nonmagnetic substrates, which have recently become the object of intensive research.     

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

ON THE ROLES OF COMPLEMENTARY AND ADMISSIBLE BOUNDARY CONSTRAINTS IN FOURIER SOLUTIONS TO THE BOUNDARY VALUE PROBLEMS OF COMPLETELY COUPLED r TH ORDER PDES

A heretofore unavailable double Fourier series based approach, for obtaining non-separable solution to a system of completely coupled linear r th order partial differential equations with constant coefficients and subjected to general (completely coupled) boundary conditions, has been presented. The method has been successfully implemented to solve a class of hitherto unsolved boundary-value problems, pertaining to free and forced vibrations of arbitrarily laminated anisotropic doubly curved thin panels of rectangular planform, with arbitrarily prescribed (both symmetric and asymmetric with respect to the panel centerlines) admissible boundary conditions and subjected to general transverse loading.Existing solutions such as those due to Navier or Levy are based on the well-known method of separation of variables. Such solutions represent particular solutions whenever the method of separation of variables work, and when these particular solution functions fortuitously satisfy the boundary conditions. For derivation of the complementary solution, the complementary boundary constraints are introduced through boundary discontinuities of some of the particular solution functions and their partial derivatives. Such discontinuities form sets of measure zero.Various cases of lamination, geometry and dynamic response (forced and free vibrations) of a class of thin anisotropic laminated shells (curved panels) have been shown to follow from the above. Six sets of boundary conditions are used to illustrate the present method for the derivation of complementary solutions. Navier-type solutions whenever available form special cases of the present general solution.     

Raman spectroscopy of topotecan, an inhibitor of DNA topoisomerase I

Topotecan (TPT), a water-soluble derivative of camptothecin (inhibitor of human DNA topoiomerase I), has found wide application in cancer chemotherapy. The central problem in using topotecan is the presence of lactone rings in its molecules, which undergo hydrolysis at a physiological pH yielding an inactive and even toxic form of the drug. The analysis of Raman spectra of TPT in H₂O and D₂O solutions made it possible to assign the spectral bands to the vibrations of particular molecular groups. Spectral features indicative of the opening of the lactone rings of the TPT molecules, deprotonation of the hydroxyl groups in their quinoline fragments, and of possible participation of the hydroxyl and carbonyl groups in H bonding are found. The data obtained are necessary to study the molecular mechanisms of TPT-DNA interaction and the formation of ternary complexes between TPT, DNA, and DNA topoisomerase I.