The mechanism of emission in the red photoluminescence band of porous silicon

Porous silicon (PS) exhibits several photoluminescence (PL) bands, whose spectral position and intensity depend strongly on the actual conditions of preparation of PS, its treatment, and subsequent use. The PS PL band peaking at about 1.8 eV and usually assigned to the intrinsic emission of silicon nanocrystals was studied. It was shown that the temperature-induced variation of the PL kinetics in the 80 to 300-K interval follows a complex pattern and depends noticeably on the actual point on the band profile. The temperature behavior of PL decay in the 1.8-eV band is determined by the electron-hole recombination rate within a nanocrystal and the cascade carrier transitions from small to large nanocrystals, with an attendant decrease in energy.     

Investigations of low- and high-spin states of <Superscript>132</Superscript>La

The fusion evaporation reaction ¹²²Sn(¹⁴N, 4n)¹³²La was used to populate the high-spin states of ¹³²La at the beam energy of 60 MeV. A new band consisting of mostly E2 transitions has been discovered. This band has the interesting links to the ground state 2^- and the isomeric state 6^-. A new transition of energy 351 keV connecting the low-spin states of the positive-parity band based on the πh _11/2 ⊗ νh _11/2 particle configuration, has been found. This has played a very important role in resolving the existing ambiguities and inconsistencies in the spin assignment of the band head. Received: 12 August 2002 / Accepted: 18 March 2003 / Published online: 7 May 2003     

Numerical study of the effects of the rupture process of a secondary diaphragm in expansion tubes

The results of a numerical study are described in which the interactions of a primary shock wave with a secondary diaphragm in expansion tubes are taken into account. The developing wave pattern in the interacting process of the shock with a secondary diaphragm are visualized by many kinds of figures (e.g., the time-distance diagrams of the wave phenomena on the axis, the acoustic impedance contours, and the time histories of the pitot pressure on the axis), and the influences of the shape and rupture process of the diaphragm on the quality of the test gas are explored.     

Contribution of “unusual” domain walls to the magnetoresistance of multilayer magnetic structures

The contribution to electrical resistance due to scattering of charge carriers by domain walls is analyzed. It is revealed that “unusual” domain walls are created by frustrations in ferromagnet-antiferromagnet multilayer magnetic structures. The thickness of an unusual domain wall is substantially less than that of a usual domain wall. It is shown that scattering of charge carriers by unusual domain walls can contribute significantly to the magnetoresistance of ferromagnet-antiferromagnet multilayer magnetic structures. An analysis of the contribution made by the Levy-Zhang mechanism to the magnetoresistance demonstrates that the initial estimate obtained for this contribution is considerably exaggerated.     

On removable even circuits in graphs

Let G be a connected graph with minimum degree at least 3. We prove that there exists an even circuit C in G such that G−E(C) is either connected or contains precisely two components one of which is isomorphic to a 1-bond. We further prove sufficient conditions for there to exist an even circuit C in a 2-connected simple graph G such that G−E(C) is 2-connected. As a consequence of this, we obtain sufficient conditions for there to exist an even circuit C in a 2-connected graph G for which G−E(C) is 2-connected.