测定电磁波速度的一种简易方法

测定电磁波速度的一种简易方法黄永修，李金铭，李铁盘（河南教育学院）本文介绍了利用电磁波的滞后效应测定电磁波速度的方法，为在实验室内测定电磁波的速度提供了一种简单易行又较准确的方法．测定实验所用的仪器有信号源、示波器及传输线．测定电磁波在空气中的传播速...     

用计算机辅助测量液体的粘滞系数

主要说明用自制光电门配合计算机辅助测量液体粘滞系数的原理和方法,当小球挡住光电门的光路时,会使光敏管产生一个电脉冲,可以利用计算机声卡配合audition软件捕捉这个脉冲,从而实现小球下落时间的测量,提高实验的精确度。     

ICP-AES测定高含量锌、镉和铜

采用ICP-AES测定高含量锌、镉和铜,选择了最佳仪器工作条件和样品处理方法。在实验优选条件下,对铜镉渣中铜的含量为8%—12%;镉的含量为35%—38%;锌的含量为21%—23%进行了测定。回收率分别为铜99.8%—100.0%,镉98.3%—99.9%,锌99.3%—99.5%。     

Progress on accurate measurement of the Planck constant:Watt balance and counting atoms

The Planck constant h is one of the most significant constants in quantum physics.Recently,the precision measurement of the value of h has been a hot issue due to its important role for the establishment of both a new SI and a revised fundamental physical constant system.Up to date,two approaches,the watt balance and counting atoms,have been employed to determine the Planck constant at a level of several parts in 108.In this paper,the principle and progress on precision measurement of the Planck constant using watt balance and counting atoms at national metrology institutes are reviewed.Further improvement in determining the Planck constant and possible developments of a revised physical constant system in future are discussed.     

140GHz大功率交错双栅行波管的设计和模拟研究

采用交错双栅结构,结合带状电子注,研究了一种工作在140 GHz频段的大功率行波管. 本振模数值计算表明该结构具有良好的色散特性和耦合阻抗.针对所采用的慢波结构, 提出了慢波过渡结构、输入输出耦合器和集中衰减器,保证了行波管的良好工作. 利用三维大信号模拟计算的方法得到的结果显示,当电子注直流功率为5.115 kW,输入信号功率为0.1 W时, 所研究的行波管能在132-152 GHz范围内提供大于300 W的峰值功率,其中在138 GHz时得到最大功率546 W, 对应增益为37.37 dB.当在0.027-0.46 W内调节输入信号功率,可以保持该行波管在128-152 GHz 频带内得到大于440 W的峰值功率,对应的电子效率大于8.6%. 结果显示该行波管将在大功率短毫米波领域具有重要意义和潜在应用价值.     

The symmetric and antisymmetric superexchange interactions in spin-Peierls system

The influences of Dzyaloshinskii Moriya （DM） interaction and Kaplan-Shekhtman-Entinwohlman-Aharony （KSEA） interaction on the dimerization of a spin-Peierls system are investigated theoretically by using the Lanczos numerical method. The ground state of the spin-Peierls system is still dimerized phase when both of the DM and the KSEA interactions have the same value with Heisenberg interaction. It is found that the KSEA interaction and uniform DM interaction are always against systemic dimerization, but the staggered DM interaction acts in favour of dimerization. Furthermore, the influences of the DM and the KSEA interactions are also studied in terms of the ground state index rate and the energy gap index rate of the dimerized Heisenberg system. The results show that the DM interaction makes the index rates larger, while the KSEA interaction makes them smaller.     

Hydrodynamics of passing-over motion during binary droplet collision in shear flow

A combined experimental and numerical study is undertaken to investigate the hydrodynamic characteristics of single-phase droplet collision in a shear flow. The passing-over motion of interactive droplets is observed, and the underlying hydrodynamic mechanisms are elucidated by the analysis of the motion trajectory, transient droplet deformation and detailed hydrodynamic information (e.g., pressure and flow fields). The results indicate that the hydrodynamic interaction process under shear could be divided into three stages: approaching, colliding, and separating. With the increasing confinement, the interaction time for the passing-over process is shorter and the droplet processes one higher curvature tip and more stretched profile. Furthermore, the lateral separation Δy/R₁ exhibits larger decrease in the approaching stage and the thickness of the lubrication film is decreased during the interaction. As the initial lateral separation increases, the maximum trajectory shift by the collision interaction is getting smaller. During the collision between two droplets with different sizes, the amplitude of the deformation oscillation of the larger droplet is decreased by reducing the size ratio of the smaller droplet to the bigger one.     

具有高开启/关断电流比的Al2O3/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管

采用原子层淀积(ALD)方法,制备了Al₂O₃为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。在栅压为-20 V时,MOS-HEMT的栅漏电比Schottky-gate HEMT的栅漏电低4个数量级以上。在栅压为+2 V时,Schottky-gate HEMT的栅漏电为191μA;在栅压为+20 V时,MOS-HEMT的栅漏电仅为23.6 nA,比同样尺寸的Schottky-gate HEMT的栅漏电低将近7个数量级。AlGaN/GaN MOS-HEMT的栅压摆幅达到了±20 V。在栅压V_gs=0 V时, MOS-HEMT的饱和电流密度达到了646 mA/mm,相比Schottky-gate HEMT的饱和电流密度(277 mA/mm)提高了133%。栅漏间距为10μm的AlGaN/GaN MOS-HEMT器件在栅压为+3 V时的最大饱和输出电流达到680 mA/mm,特征导通电阻为1.47 mΩ·cm²。Schottky-gate HEMT的开启与关断电流比仅为10⁵,MOS-HEMT的开启与关断电流比超过了10⁹,超出了Schottky-gate HEMT器件4个数量级,原因是栅漏电的降低提高了MOS-HEMT的开启与关断电流比。在V_gs=-14 V时,栅漏间距为10μm的AlGaN/GaN MOS-HEMT的关断击穿电压为640 V,关断泄露电流为27μA/mm。     

利用高压热处理技术提高Bi-2223/Ag高温超导带材临界电流

提高临界电流密度(Jc)对促进Bi-2223/Ag高温超导带材的应用有着重要意义.在常压热处理条件下所制备的带材中存在大量的裂纹、孔洞和第二相颗粒等,这些因素都会对带材的超导连接性能产生破坏作用.我们成功建立了一套可用氧气氛的热等静压设备,工作气压和温度可同时达到15MPa和850°C.通过引入裂纹愈合热处理过程,我们成功对带材进行了高压热处理,所得样品中第二相颗粒和裂纹数量大幅度降低,77K、自场下的临界电流相比常压热处理样品提高了20%左右.     

基于电磁拓扑的多腔体屏蔽效能快速算法

提出基于电磁拓扑理论计算开孔多腔体屏蔽效能的快速方法.首先给出双腔体等效电路和电磁拓扑信号流图,并推导孔缝节点处的散射矩阵,给出拓扑网络的散射矩阵方程和传输矩阵方程,获得双腔体的广义Baum-Liu-Tesche(BLT)方程.在此基础上研究了开孔三腔体,包括串型级联三腔体和串并型混合级联三腔体的广义BLT方程.对于串型级联三腔体,其电磁拓扑网络和广义BLT方程在双腔体基础上直接扩展即可获得.而对于串并型混合级联三腔体,通过将位于三腔体公共面上的孔缝等效为三端口网络节点,并根据三端口网络散射参数定义推导获得该节点的散射矩阵,最终得到串并型混合级联三腔体的广义BLT方程.本文方法对双腔体的计算结果与文献结果和实验结果相符合,对3组不同类型和尺寸开孔腔的屏蔽效能的计算结果与时域有限差分法计算结果符合较好.该算法不仅效率高,通过对所有计算结果和实验结果的误差统计分析,表明该算法具有较高的计算准确度.