基于DenseNet的散射成像景深拓展研究

针对拼接干涉测量技术除了引入拼接误差,还将引入机械运动误差的问题,为此提出一种X射线反射镜的非零位干涉测量方法,无需拼接便可实现零回程误差的高精度干涉测量。利用一块高精度平面镜来标定干涉系统在全视场范围内的回程误差。通过将待测非球面镜划分成多个子孔径,每个子孔径可近似看作一个平面,这样可以从标定数据库中找到该子孔径所对应的回程误差,通过简单的矩阵拼接可得到整个待测非球面镜的回程误差。以X射线椭圆柱面反射镜为例进行实验,实现X射线椭圆柱面反射镜非零位干涉测量面形的回程误差有效标定,相比于拼接干涉测量方法二者结果一致性较好,证实所提方法的正确性。     

基于表面增强拉曼技术的致病菌及其耐药性检测研究进展

随着抗菌药物广泛应用于临床,细菌耐药日益严重.实现快速、高灵敏、准确的细菌及其药物敏感性检测是缓解细菌耐药的关键环节.表面增强拉曼光谱(SERS)具有快速、灵敏、无损等优点,可直接获取分子指纹信息,它已成为一种有效的细菌及其耐药性检测技术.不同种类细菌的分子组成和结构存在差异、抗生素处理前后细菌的特征拉曼信号会发生变化...     

运用三维离散元技术模拟落锤撞击下奥克托今颗粒的点火燃烧过程

炸药颗粒的点火燃烧过程一直是人们关注的热点问题。近年来,三维离散元技术在中尺度观测颗粒材料的动力学过程中拥有显著优势。炸药燃烧属于颗粒材料的反应动力学,运用三维离散元技术(DM3)可以有效地观测炸药燃烧传播的过程。以奥克托今(HMX)颗粒为例,本文成功模拟并观测到了HMX颗粒的燃烧反应程度,确定了颗粒开始燃烧反应的时间,以及燃烧反应传播的时间。同时,结合落锤冲击颗粒的三维图像以及其表观压强和放热功率,得到了HMX颗粒燃烧反应、燃烧传播的整个反应动力学过程,包括颗粒在冲击加载下碎化塑性变形的过程,颗粒燃烧反应放热的过程,落锤回弹颗粒喷射的过程等。同时,进一步说明了尖顶颗粒更利于颗粒点火,平顶颗粒有抑制颗粒点火的能力。     

新型富勒烯衍生物的光限幅研究

应用倍频Ｎｄ∶ＹＡＧ脉冲激光，在波长为５３２ｎｍ、脉冲宽度分别为８ｎｓ和２３ｐｓ的条件下，研究了新型富勒氮烯乙酰氨衍生物（Ｎ－ａｃｅｔａｍｉｄｅ１，２－ｄｉｈｙｄｒｏ－１，２－ａｚａ－ｆｕｌｅｒｅｎｅ［６０］）的反饱和吸收与光限幅特性。实验结果表明，同脉宽为纳秒的激发脉冲相比，富勒烯乙酰氨衍生物对脉宽为皮秒的脉冲限幅效果比较好。     

Ge掺杂GaN晶体双光子诱导超快载流子动力学的飞秒瞬态吸收光谱研究

本文利用飞秒瞬态吸收光谱技术,在近红外波段对Ge掺杂GaN(GaN:Ge)晶体进行了超快载流子动力学研究.在双光子激发下,瞬态吸收动力学呈现出双指数衰减,其中慢过程寿命随着泵浦光强增加而增加.瞬态吸收响应随着探测波长而单调增强,并在约1050nm处由空穴吸收占据主导.利用简化模型模拟载流子动力学发现,GaN:Ge中碳杂质形成的深受主能级对空穴有很强的俘获能力,并且引起了缺陷发光.在较适中的载流子注入下,n型GaN中的载流子寿命可以通过控制缺陷浓度和载流子浓度来共同调控,使其可应用于发光二极管和光通信等不同的领域.     

空间高层大气遥感远紫外成像光谱仪的光学系统

空间高层大气遥感远紫外成像光谱仪主要用于观测高层大气中的远紫外辐射和实现对其内部中尺度现象成像的功能。目前我国该类的相关仪器研究基础还比较薄弱,针对这种情况,在光学系统设计的角度上给出了一种适用于130～180nm波段探测的光学系统方案。该成像光谱仪光学系统以离轴抛物镜为物镜,串联Wadsworth结构为成像光谱系统;这种串联Wadsworth成像光谱系统采用离轴抛物镜做准直镜,分光器件为平面光栅和球面光栅串联,实现二次色散,同时球面光栅起到聚焦成像作用;在像差理论的基础上,对该结构的光程函数和各像差进行了分析,获得了改进结构的宽波段完善成像条件。针对低轨空间探测应用要求设计了相关改进型Wadsworth结构成像光谱仪光学系统,设计结果证明系统像差得到了充分校正,在奈奎斯特频率(20lp/mm)下全视场全波段调制传递函数值在0.6以上。该优化结构同时具备高空间分辨率和高光谱分辨率,性能优越。     

Comparison of formation and evolution of radiation-induced defects in pure Ni and Ni-Co-Fe medium-entropy alloy

High-entropy alloys (HEAs) and medium-entropy alloys (MEAs) have attracted a great deal of attention for developing nuclear materials because of their excellent irradiation tolerance. Herein, formation and evolution of radiation-induced defects in NiCoFe MEA and pure Ni are investigated and compared using molecular dynamics simulation. It is observed that the defect recombination rate of ternary NiCoFe MEA is higher than that of pure Ni, which is mainly because, in the process of cascade collision, the energy dissipated through atom displacement decreases with increasing the chemical disorder. Consequently, the heat peak phase lasts longer, and the recombination time of the radiation defects (interstitial atoms and vacancies) is likewise longer, with fewer deleterious defects. Moreover, by studying the formation and evolution of dislocation loops in Ni-Co-Fe alloys and Ni, it is found that the stacking fault energy in Ni-Co-Fe decreases as the elemental composition increases, facilitating the formation of ideal stacking fault tetrahedron structures. Hence, these findings shed new light on studying the formation and evolution of radiation-induced defects in MEAs.     

Edge assisted epitaxy of CsPbBr3 nanoplates on Bi2O2Se nanosheets for enhanced photoresponse

Bi$_{2}$O$_{2}$Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties. However, it is still a great challenge to construct the heterostructures with direct epitaxy of hetero semiconductor materials on Bi$_{2}$O$_{2}$Se nanosheets. Here, a two-step chemical vapor deposition (CVD) route was used to directly grow the CsPbBr$_{3}$ nanoplate-Bi$_{2}$O$_{2}$Se nanosheet heterostructures. The CsPbBr$_{3}$ nanoplates were selectively grown on the Bi$_{2}$O$_{2}$Se nanosheet along the edges, where the dangling bonds provide the nucleation sites. The epitaxial relationships between CsPbBr$_{3}$ and Bi$_{2}$O$_{2}$Se were determined as ${[200]}_{\rm Bi_{2}O_{2}Se}||{[110]}_{\rm CsPbBr_{3}}$ and ${[110]}_{\rm Bi_{2}O_{2}Se}||{[200]}_{\rm CsPbBr_{3}}$ by transmission electron microscopy characterization. The photoluminescence (PL) results reveal that the formation of heterostructures results in the remarkable PL quenching due to the type-I band arrangement at CsPbBr$_{3}$/Bi$_{2}$O$_{2}$Se interface, which was confirmed by ultraviolet photoelectron spectroscopy (UPS) and Kelvin probe measurements, and makes the photogenerated carriers transfer from CsPbBr$_{3}$ to Bi$_{2}$O$_{2}$Se. Importantly, the photodetectors based on the heterostructures exhibit a 4-time increase in the responsivity compared to those based on the pristine Bi$_{2}$O$_{2}$Se sheets, and the fast rise and decay time in microsecond. These results indicate that the direct epitaxy of the CsPbBr$_{3}$ plates on the Bi$_{2}$O$_{2}$Se sheet may improve the optoelectronic performance of Bi$_{2}$O$_{2}$Se based devices.     

A SIMPLE PROOf OF KUPKA-SMALE THEOREN

ＡＳＩＭＰＬＥＰＲＯＯｆＯＦＫＵＰＫＡ－ＳＭＡＬＥＴＨＥＯＲＥＮ林振声福州大学，邮编：３５０００２ＡＳＩＭＰＬＥＰＲＯＯｆＯＦＫＵＰＫＡ－ＳＭＡＬＥＴＨＥＯＲＥＮ￥ＬｉｎＺｈｅｎｓｈｅｎｇ（ＦｕｚｈｏｕＵｎｉｖｅｒｓｉｔｙ，３５０００２，）Ａｂｓｔｒ...     

由偏微支配的系统的最优控制理论中的奇异摄动方法*

本文介绍了由偏微分方程支配的系统的最优控制理论中有关应用奇异摄动方法时出现的各种问题。考虑了渐近分析来自状态方程。或来自性能指标函数,也考虑了状态方程是定义在摄动域内的情形。