Alpha Decay of the Neutron-deficient Isotopes 215,216U

The most neutron-deficient isotopes 215;216U were produced in the complete-fusion reaction 180W(40Ar, 4-5n)215,216U. Evaporation residues recoiled from the target were separated in-flight from the primary beam by the gas-filled recoil separator SHANS and subsequently identified on the basis of correlated -decay chains. Two -decaying states were identified in 216U, one for the ground state and the other for the isomeric state with 8+(h9=2f7=2) configuration. The -decay properties for 215;216U and the systematics of 8+ isomeric state in N =124,126 isotones were investigated.     

On Extension of Optimal Entanglement Concentration of GHZ States in Quantum-Dot and Micro-Cavity Coupled System

We extend an optimal entanglement distillation of the triplet Greenberger-Horne-Zeilinger （GHZ） state via entanglement concentrating in the three-partite partially electron-spin-entangled systems. Two entanglement concen- tration protocols are similarly designed in detail with the post-selection in quantum-dot （QD） and micro-cavity coupled systems. The proposed protocol can be repeated several rounds to achieve an optimal success probability with an as- sistance of the ancillary QD, where only the single photon needs to pass through the micro-cavity for each round. It increases the total success probability of the distillation even if the implemented cavity is imperfect in practice during the whole process.     

Exact Equivalence between Quantum Adiabatic Algorithm and Quantum Circuit Algorithm

We present a rigorous proof that quantum circuit algorithm can be transformed into quantum adiabatic algorithm with the exact same time complexity. This means that from a quantum circuit algorithm of L gates we can construct a quantum adiabatic algorithm with time complexity of O(L). Additionally, our construction shows that one may exponentially speed up some quantum adiabatic algorithms by properly choosing an evolution path.     

Performance of a double sided silicon strip detector as a transmission detector for heavy ions

The performance of a double sided silicon strip detector （DSSSD）, which is used for the position and energy detection of heavy ions, is reported. The analysis shows that although the incomplete charge collection （ICC） and charge sharing （CS） effects of the DSSSD give rise to a loss of energy resolution, the position information is recorded without ambiguity. Representations of ICC/CS events in the energy spectra are shown and their origins are confirmed by correlation analysis of the spectra from both the junction side and ohmic side of the DSSSD.     

Configuration of the valence neutrons of 17B

The reaction cross section of ~(17)B on ~(12)C target at(43.7±2.4)MeV/u has been measured at the Radioactive Ion Beam Line in Lanzhou(RIBLL).The root-mean-square matter radius(R_(rms))was deduced to be(2.92±0.10)fm,while the R_(rms)of the core and the valence neutron distribution are 2.28 fm and 5.98 fm respectively.Assuming a"core plus 2n"structure in ~(17)B,the mixed configuration of(2s_(1/2))and(1d_(1/2))of the valence neutrons is studied and the s-wave spectroscopic factor is found to be(80±21)%.     

钢筋混凝土旧工业厂房结构加固方案优选

当前人们选择旧工业厂房结构加固方案效率低下,且所考虑的因素较为片面,为了全面、高效地解决这一问题,通过综合考虑安全性、经济性、时间性、可行性和适用性等因素,以加固效果显著的工程案例为标准,以全面的18个参数为评价指标,构建了一种基于蛛网面积相似和形状相似的结构加固方案优选模型。该模型中首先运用熵权法确定18个指标权重,并将参数值归一化处理,随后运用Python计算蛛网结构相似度,检索出与目标范例最为相似的源范例。最后以结构加固效果显著的工程为例,验证了该模型能有效减少主观误差,具有较强的实用性,并以此模型优选出了某轧钢厂房结构加固方案。     

一种自组装的长程有序纳米模式

根据Moore定律,微处理器的能力可以按指数方式快速提高,数据存储能力的提高也以相似的方式增长,所以这已经成为进一步提高光刻技术的关键点.尖端光刻技术已经允许器件的特征长度可以比用来制作它们的光波波长还要短.例如,相干效应可被用于具有超紫外光线特性的50nm模式上[1].但是想要继续在成本与效益方面有所改善,可能性很小,所以Moore定律与光刻技术将会不可避免地分道扬镳.     

氨基磺酸/浓硫酸协同催化合成羧酸乙酯

以肉桂酸和无水乙醇为原料、廉价的氨基磺酸/浓硫酸为协同催化剂、环己烷为带水剂,合成了肉桂乙酯,收率90.0%。反应的优化条件为:氨基磺酸/浓硫酸/肉桂酸/无水乙醇=1.9/1/9.1/31.8(物质的量之比),时间3 h。利用该优化条件,共合成了9种羧酸乙酯,包括芳香酸、脂肪酸、二元酸、不饱和酸的乙酯。该法突出的优点有:催化剂价廉易得且可重复使用、产率高、后处理简便。     

无机固体材料中的忆阻效应

缺陷调控是固体化学中的基本问题,也是决定材料性能的核心要素。基于缺陷调控的忆阻效应将给未来电子信息领域带来全新的变革。本文综述了无机固体材料中忆阻效应的研究进展,主要总结了忆阻效应的产生机制和忆阻材料的类型,结合原子级p-n结的相关工作,提出深入明确电场下缺陷迁移机制将是从无机固体化学角度研究忆阻效应的重要方向。